Patents Assigned to ASM IP Holding B.V.
  • Patent number: 10934619
    Abstract: A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.
    Type: Grant
    Filed: November 2, 2017
    Date of Patent: March 2, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Young Hoon Kim, Yong Gyu Han, Dae Youn Kim, Hyun Soo Jang, Jeong Ho Lee
  • Patent number: 10937645
    Abstract: The present application discloses forming self-assembled monolayers (SAMs) by exposing the substrate at least twice to SAM precursors with intervening cooling of a substrate.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: March 2, 2021
    Assignee: ASM IP HOLDING B.V.
    Inventor: Elina Färm
  • Patent number: 10928731
    Abstract: The disclosure relates to a sequential infiltration synthesis for treatment of infiltrateable material. Examples of the disclosure provide a method of forming a structure that includes providing the substrate with a infiltrateable material in a reaction chamber and infiltrating the infiltrateable material with infiltration material during one or more infiltration cycles.
    Type: Grant
    Filed: September 21, 2018
    Date of Patent: February 23, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Krzysztof Kachel, David de Roest
  • Patent number: 10927459
    Abstract: An atomic layer deposition (ALD) method can include pulsing a first reactant vapor into a reactor assembly. The first reactant vapor is supplied to a first reactant gas line. An inactive gas is supplied to a first inactive gas line at a first flow rate. The first reactant vapor and the inactive gas are fed to the reactor assembly by way of a first feed line. The reactor assembly is purged by supplying the inactive gas to the first inactive gas line at a second flow rate higher than the first flow rate. A first portion of the inactive gas can be fed back along a diffusion barrier portion of the first reactant gas line to provide an inert gas valve (IGV) upstream of the first inactive gas line. A second portion of the inactive gas can be fed to the reactor assembly by way of the first feed line.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: February 23, 2021
    Assignee: ASM IP HOLDING B.V.
    Inventor: Eric Jen Cheng Liu
  • Patent number: 10923361
    Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.
    Type: Grant
    Filed: October 21, 2019
    Date of Patent: February 16, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma, Jan Willem Maes, Delphine Longrie, Krzysztof Kachel
  • Patent number: 10923344
    Abstract: A method for forming a forming a semiconductor structure is disclosed. The method may include: forming a silicon oxide layer on a surface of a substrate, depositing a silicon germanium (Si1-xGex) seed layer directly on the silicon oxide layer, and depositing a germanium (Ge) layer directly on the silicon germanium (Si1-xGex) seed layer. Semiconductor structures including a germanium (Ge) layer deposited on silicon oxide utilizing an intermediate silicon germanium (Si1-xGex) seed layer are also disclosed.
    Type: Grant
    Filed: October 30, 2017
    Date of Patent: February 16, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: David Kohen, Harald Benjamin Profijt, Andrew Kretzschmar
  • Patent number: 10914004
    Abstract: A method of depositing a thin film having a desired etching characteristic while improving a loss amount and loss uniformity of a lower film includes, on the semiconductor substrate and the pattern structure: a first operation of depositing a portion of the thin film by repeating a first cycle comprising (a1) a source gas supply operation, (b1) a reactant gas supply operation, and (c1) a plasma supply operation for a certain number of times; a second operation of depositing a remaining portion of the thin film by repeating a second cycle comprising (a2) a source gas supply operation, (b2) a reactant gas supply operation, and (c2) a plasma supply operation for a certain number of times after the first operation, wherein a supply time of the source gas supply operation (a1) is longer than a supply time of the source gas supply operation (a2).
    Type: Grant
    Filed: June 27, 2019
    Date of Patent: February 9, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: ManSu Lee, SungKyu Kang, EunSook Lee, MinSoo Kim, SeungWoo Choi
  • Patent number: 10910262
    Abstract: A method of selectively depositing a capping layer structure on a semiconductor device structure is disclosure. The method may include; providing a partially fabricated semiconductor device structure comprising a surface including a metallic interconnect material, a metallic barrier material, and a dielectric material. The method may also include; selectively depositing a first metallic capping layer over the metallic barrier material and over the metallic interconnect material relative to the dielectric material; and selectively depositing a second metallic capping layer over the first metallic capping layer relative to the dielectric material. Semiconductor device structures including a capping layer structure are also disclosed.
    Type: Grant
    Filed: November 16, 2017
    Date of Patent: February 2, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Aurélie Kuroda, Akiko Kobayashi, Dai Ishikawa
  • Patent number: 10903113
    Abstract: Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.
    Type: Grant
    Filed: January 27, 2020
    Date of Patent: January 26, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Han Wang, Qi Xie, Delphine Longrie, Jan Willem Maes, David de Roest, Julian Hsieh, Chiyu Zhu, Timo Asikainen, Krzysztof Kachel, Harald Profijt
  • Patent number: 10900120
    Abstract: Passivation layers to inhibit vapor deposition can be used on reactor surfaces to minimize deposits while depositing on a substrate housed therein, or on particular substrate surfaces, such as metallic surfaces on semiconductor substrates to facilitate selective deposition on adjacent dielectric surfaces. Passivation agents that are smaller than typical self-assembled monolayer precursors can have hydrophobic or non-reactive ends and facilitate more dense passivation layers more quickly than self-assembled monolayers, particularly over complex three-dimensional structures.
    Type: Grant
    Filed: July 12, 2018
    Date of Patent: January 26, 2021
    Assignee: ASM IP HOLDING B.V.
    Inventors: Varun Sharma, Eva Tois
  • Patent number: 10900122
    Abstract: A spatial atomic layer deposition apparatus (10), including a showerhead (16) with a showerhead side (18) having a center, a central area and a circumferential area. The apparatus also includes a susceptor (12) having a substrate support side that extends parallel to and of opposite the showerhead side forming a gap. The susceptor and the showerhead are rotatable relative to each other around an axis of rotation. The apparatus has a plurality of switchable showerhead sections. The apparatus also includes a plurality of multi-way valve assemblies. Each switchable showerhead section is fluidly connected with one of the plurality of multi-way valve assemblies, so as to fluidly connect a selected one of a plurality of different gas sources with that switchable showerhead section.
    Type: Grant
    Filed: May 27, 2016
    Date of Patent: January 26, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: John Shugrue, Lucian C. Jdira, Chris G. M. de Ridder
  • Patent number: 10896820
    Abstract: A method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process is disclosed. The method may include: contacting the substrate with a first vapor phase reactant comprising a metalorganic precursor, the metalorganic precursor comprising a metal selected from the group consisting of a cobalt, nickel, tungsten, molybdenum, manganese, iron, and combinations thereof. The method may also include; contacting the substrate with a second vapor phase reactant comprising ruthenium tetroxide (RuO4); wherein the ruthenium-containing film comprises a ruthenium-metal alloy. Semiconductor device structures including ruthenium-metal alloys deposited by the methods of the disclosure are also disclosed.
    Type: Grant
    Filed: February 14, 2018
    Date of Patent: January 19, 2021
    Assignee: ASM IP Holding B.V.
    Inventor: Suvi Haukka
  • Patent number: 10892156
    Abstract: A method for forming a silicon nitride film on a substrate is disclosed. The method may include; forming a cyclical silicon nitride film on the substrate by a cyclical deposition process, wherein the cyclical deposition process comprises at least one of; contacting the substrate with a first reactant comprising a silicon halide source and contacting the substrate with a second reactant comprising a nitrogen source. The method may also include exposing the cyclical silicon nitride film to a plasma. Semiconductor device structures comprising a silicon nitride film are also disclosed.
    Type: Grant
    Filed: May 8, 2017
    Date of Patent: January 12, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Jacob Huffman Woodruff, Bed Sharma, Eric James Shero
  • Patent number: 10883175
    Abstract: The disclosure relates to a vertical furnace for processing a plurality of substrates and a liner for use therein. The vertical furnace having an outer reaction tube having a central axis; and a liner constructed to extend in the interior of the outer reaction tube. The liner defines an interior space for accommodating substrates and is provided with a gas exhaust hole extending from the interior space to the outside. One of the outer wall of the liner and the inner wall of the reaction tube is provided with a flow deflector that protrudes radially from the respective wall into a gas passage between an outer wall of the liner and an inner wall of the reaction tube.
    Type: Grant
    Filed: August 9, 2018
    Date of Patent: January 5, 2021
    Assignee: ASM IP Holding B.V.
    Inventor: Frans Wiegers
  • Patent number: 10886123
    Abstract: A method for forming a metal nitride film with good film closure at low temperatures is disclosed. The method may comprise utilizing plasma to form NH and NH2 radicals to allow for the formation of the metal nitride at low temperatures. The method may also comprise flowing an etch gas to result in an amorphous film with uniform thickness. The method may also comprise flowing an alkyl hydrazine to inhibit three-dimensional island growth of the metal nitride film.
    Type: Grant
    Filed: May 9, 2018
    Date of Patent: January 5, 2021
    Assignee: ASM IP Holding B.V.
    Inventors: Petri Raisanen, Moataz Bellah Mousa, Peng-Fu Hsu
  • Patent number: 10875774
    Abstract: Aluminum (Al) hydrocarbon precursor compositions are provided that can be used for vapor deposition of transition metal carbide thin films, for example aluminum-doped transition metal carbide thin films such as Al-doped titanium carbide thin films. In some embodiments, the precursor compositions comprise one or more isomers of tritertbutyl aluminum (TTBA). In some embodiments the precursor compositions comprise at least 50% of Isomer 1 of TTBA, at least 50% of Isomer 2 of TTBA, or at least 20% of a combination of Isomer 1 and Isomer 2, where Isomer 1 has the formula Al(tert-Bu)2(iso-Bu) and Isomer 2 has the formula Al(tert-Bu)(iso-Bu)2. A container containing a precursor composition comprising at least 50% of Isomer 1 or Isomer 2 or at least 20% of a combination of Isomer 1 and 2 of TTBA can be attached to a vapor deposition reactor and used to deposit transition metal carbide thin films such as Al-doped titanium carbide thin films by atomic layer deposition or chemical vapor deposition.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: December 29, 2020
    Assignee: ASM IP HOLDING B.V.
    Inventors: Eric J. Shero, Mohith E. Verghese
  • Patent number: 10876218
    Abstract: A substrate supporting plate that may prevent deposition on a rear surface of a substrate and may easily unload the substrate. The substrate supporting plate may include a substrate mounting portion and a peripheral portion surrounding the substrate mounting portion. An edge portion of a top surface of the substrate mounting portion may be anodized. A central portion of the top surface of the substrate mounting portion may not be anodized.
    Type: Grant
    Filed: March 6, 2017
    Date of Patent: December 29, 2020
    Assignee: ASM IP HOLDING B.V.
    Inventors: Yong Min Yoo, Jong Won Shon, Seung Woo Choi, Dong Seok Kang
  • Patent number: 10876205
    Abstract: Herein disclosed are systems and methods related to solid source chemical vaporizer vessels and multiple chamber deposition modules. In some embodiments, a solid source chemical vaporizer includes a housing base and a housing lid. Some embodiments also include a first and second tray configured to be housed within the housing base, wherein each tray defines a first serpentine path adapted to hold solid source chemical and allow gas flow thereover. In some embodiments, a multiple chamber deposition module includes first and second vapor phase reaction chambers and a solid source chemical vaporizer vessel to supply each of the first and second vapor phase reaction chambers.
    Type: Grant
    Filed: September 30, 2016
    Date of Patent: December 29, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Mohith Verghese, Eric James Shero, Carl Louis White, Kyle Fondurulia
  • Patent number: 10872804
    Abstract: The present disclosure relates to a semiconductor processing apparatus having a reaction chamber which can include a baseplate having an opening; a moveable substrate support configured to support a substrate; a movement element configured to move a substrate held on the substrate support towards the opening of the baseplate; a plurality of gas inlets positioned above and configured to direct gas downwardly towards the substrate support; and a sealing element configured to form a seal between the baseplate and the substrate support, the seal positioned at a greater radial distance from a center of the substrate support than an outer edge of the substrate support. In some embodiments, the sealing element can also include a plurality of apertures extend through the sealing element, the apertures configured to provide a flow path between a position below the sealing element to a position above the sealing element. Some embodiments include two or more stacked sealing elements.
    Type: Grant
    Filed: July 10, 2018
    Date of Patent: December 22, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Carl Louis White, Kyle Fondurulia, John Kevin Shugrue, David Marquardt
  • Patent number: 10872765
    Abstract: Methods and systems for selectively depositing dielectric films on a first surface of a substrate relative to a passivation layer previously deposited on a second surface are provided. The methods can include at least one cyclical deposition process used to deposit material on the first surface while the passivation layer is removed, thereby preventing deposition over the passivation layer.
    Type: Grant
    Filed: April 30, 2019
    Date of Patent: December 22, 2020
    Assignee: ASM IP HOLDING B.V.
    Inventors: Eva Tois, Viljami Pore