Patents Assigned to ASM IP Holding B.V.
  • Patent number: 10541173
    Abstract: A method for depositing a film to form an air gap within a semiconductor device is disclosed. An exemplary method comprises pulsing a metal halide precursor onto the substrate and pulsing an oxygen precursor onto a selective deposition surface. The method can be used to form an air gap to, for example, reduce a parasitic resistance of the semiconductor device.
    Type: Grant
    Filed: December 8, 2017
    Date of Patent: January 21, 2020
    Assignee: ASM IP Holding B.V.
    Inventor: Chiyu Zhu
  • Patent number: 10541333
    Abstract: A method for depositing a Group IV semiconductor on a surface of a substrate is disclosed. The method may include: providing a substrate within a reaction chamber and heating the substrate to a deposition temperature. The methods may further include: exposing the substrate to at least one Group IV precursor and exposing the substrate to at least one Group IIIA dopant precursor; wherein the at least one Group IIIA dopant precursor comprises a borohydride, an organic borohydride, a halide, or an organohalide. Semiconductor device structures including a Group IV semiconductor deposited by the methods of the disclosure are also provided.
    Type: Grant
    Filed: May 21, 2018
    Date of Patent: January 21, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: John Tolle, Joe Margetis
  • Patent number: 10535516
    Abstract: A method for depositing a semiconductor structure on a surface of a substrate is disclosed. The method may include: depositing a first group IVA semiconductor layer over a surface of the substrate; contacting an exposed surface of the first group IVA semiconductor layer with a first gas comprising a first chloride gas; and depositing a second group IVA semiconductor layer over a surface of the first group IVA semiconductor layer. Related semiconductor structures are also disclosed.
    Type: Grant
    Filed: February 1, 2018
    Date of Patent: January 14, 2020
    Assignee: ASM IP Holdings B.V.
    Inventors: David Kohen, Nupur Bhargava, John Tolle, Vijay D'Costa
  • Patent number: 10529563
    Abstract: Methods for forming a doped metal oxide film on a substrate by cyclical deposition are provided. In some embodiments, methods may include contacting the substrate with a first reactant comprising a metal halide source, contacting the substrate with a second reactant comprising a hydrogenated source and contacting the substrate with a third reactant comprising an oxide source. In some embodiments, related semiconductor device structures may include a doped metal oxide film formed by cyclical deposition processes.
    Type: Grant
    Filed: March 9, 2018
    Date of Patent: January 7, 2020
    Assignee: ASM IP Holdings B.V.
    Inventors: Tom Blomberg, Chiyu Zhu
  • Patent number: 10529554
    Abstract: A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.
    Type: Grant
    Filed: May 11, 2017
    Date of Patent: January 7, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Dai Ishikawa, Atsuki Fukazawa, Eiichiro Shiba, Shinya Ueda, Taishi Ebisudani, SeungJu Chun, YongMin Yoo, YoonKi Min, SeYong Kim, JongWan Choi
  • Patent number: 10529542
    Abstract: Gas-phase reactors and systems are disclosed. Exemplary reactors include a reaction chamber having a tapered height. Tapering the height of the reactor is thought to reduce a pressure drop along the flow of gasses through the reactor. Exemplary reactors can also include a spacer within a gap to control a flow of gas between a region and a reaction chamber.
    Type: Grant
    Filed: March 11, 2015
    Date of Patent: January 7, 2020
    Assignee: ASM IP Holdings B.V.
    Inventors: Carl Louis White, Eric James Shero, Mohith Verghese
  • Patent number: 10526704
    Abstract: A film forming apparatus includes a chamber having a processing space, a stage provided in the processing space and having a substrate placed thereon, a diffusion tube connected to the chamber so that a diffusion space communicating with the processing space is provided right above the stage, and a gas supply tube extending from the outside of the diffusion tube into the diffusion space through a portion of the diffusion tube and having a gas supply orifice in a portion thereof inside of the diffusion space. The gas supply orifice is formed so as to eject a material gas in a direction away from the stage.
    Type: Grant
    Filed: January 30, 2015
    Date of Patent: January 7, 2020
    Assignee: ASM IP HOLDING B.V.
    Inventors: Yuya Nonaka, Yozo Ikedo
  • Patent number: 10519541
    Abstract: A reactor system and related methods are provided which may include a heating element in a wafer tray. The heating element may be used to heat the wafer tray and a substrate or wafer seated on the wafer tray within a reaction chamber assembly, and may be used to cause sublimation of a native oxide of the wafer.
    Type: Grant
    Filed: July 6, 2018
    Date of Patent: December 31, 2019
    Assignee: ASM IP Holdings, B.V.
    Inventors: John Tolle, Eric Hill
  • Patent number: 10521774
    Abstract: A preventive maintenance system includes a sensor attached to a movable part, and a preventive maintenance device which accumulates data on the operation of the movable part detected with the sensor, detects an indication of a malfunction of the movable part from a correlation between the operation data and a malfunction mode of the movable part, and notifies an operator of an indication of the malfunction when the indication of the malfunction of the movable part is found, or orders a replacement part for a component part which is a cause of the indication of the malfunction.
    Type: Grant
    Filed: March 22, 2016
    Date of Patent: December 31, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Hanako Komine, Phuc Hong Ninh
  • Publication number: 20190390345
    Abstract: Examples of a substrate processing apparatus includes a device for subjecting a substrate to processing, and a controller for modifying a control parameter predetermined to control the device with a first modification value and a second modification value that vary over time, thereby calculating a modified parameter, and controlling the device based on the modified parameter, wherein the first modification value has a shorter term for modifying the control parameter than the second modification value.
    Type: Application
    Filed: June 21, 2018
    Publication date: December 26, 2019
    Applicant: ASM IP Holding B.V.
    Inventors: Takashi WADA, Satoru NOGUCHI, Wataru ADACHI, Daisuke MURAMATSU
  • Publication number: 20190390338
    Abstract: Methods of forming thin-film structures including metal carbide material, and structures and devices including the metal carbide material are disclosed. Exemplary structures include metal carbide material formed using two or more different processes (e.g., two or more different precursors), which enables tuning of various metal carbide material properties, including resistivity, current leakage, and work function.
    Type: Application
    Filed: September 6, 2019
    Publication date: December 26, 2019
    Applicant: ASM IP Holding B.V.
    Inventors: Petri Raisanen, Michael Givens, Eric James Shero
  • Patent number: 10515795
    Abstract: A method of depositing a thin film includes: repeating a first gas supply cycle a first plurality of times, the first gas supply cycle including supplying a source gas to a reaction space; supplying first plasma while supplying a reactant gas to the reaction space; repeating a second gas supply cycle a second plurality of times, the second gas supply cycle including supplying the source gas to the reaction space; and supplying second plasma while supplying the reactant gas to the reaction space, wherein the supplying of the first plasma includes supplying remote plasma, and the supplying of the second plasma includes supplying direct plasma.
    Type: Grant
    Filed: January 2, 2017
    Date of Patent: December 24, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Young Hoon Kim, Dae Youn Kim, Sang Wook Lee
  • Patent number: 10515794
    Abstract: A process for depositing a silicon carbon nitride film on a substrate can include a plurality of complete deposition cycles, each complete deposition cycle having a SiN sub-cycle and a SiCN sub-cycle. The SiN sub-cycle can include alternately and sequentially contacting the substrate with a silicon precursor and a SiN sub-cycle nitrogen precursor. The SiCN sub-cycle can include alternately and sequentially contacting the substrate with carbon-containing precursor and a SiCN sub-cycle nitrogen precursor. The SiN sub-cycle and the SiCN sub-cycle can include atomic layer deposition (ALD). The process for depositing the silicon carbon nitride film can include a plasma treatment. The plasma treatment can follow a completed plurality of complete deposition cycles.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: December 24, 2019
    Assignee: ASM IP Holding B.V.
    Inventor: Viljami Pore
  • Patent number: 10510529
    Abstract: Methods for depositing silicon oxycarbonitride (SiOCN) thin films on a substrate in a reaction space are provided. The methods can include at least one plasma enhanced atomic layer deposition (PEALD) cycle including alternately and sequentially contacting the substrate with a silicon precursor and a second reactant that does not include oxygen. In some embodiments the methods allow for the deposition of SiOCN films having improved acid-based wet etch resistance.
    Type: Grant
    Filed: September 18, 2017
    Date of Patent: December 17, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Toshiya Suzuki, Viljami J. Pore
  • Patent number: 10510536
    Abstract: Methods for depositing a co-doped polysilicon film on a surface of a substrate within a reaction chamber are provided. The method may include: heating the substrate to a deposition temperature of less than 550° C.; simultaneously contacting the substrate with a silicon precursor, a n-type dopant precursor, and a p-type dopant precursor; and depositing the co-doped polysilicon film on the surface of the substrate. Related semiconductor structures are also disclosed.
    Type: Grant
    Filed: March 29, 2018
    Date of Patent: December 17, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: David Kohen, John Tolle
  • Patent number: 10504742
    Abstract: A method for etching a target layer on a substrate by a dry etching process includes at least one etching cycle, wherein an etching cycle includes: depositing a carbon halide film using reactive species on the target layer on the substrate; and etching the carbon halide film using a plasma of a non-halogen hydrogen-containing etching gas, which plasma alone does not substantially etch the target layer, thereby generating a hydrogen halide as etchant species at a boundary region of the carbon halide film and the target layer, thereby etching a portion of the target layer in the boundary region.
    Type: Grant
    Filed: May 23, 2018
    Date of Patent: December 10, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Masaru Zaitsu, Nobuyoshi Kobayashi, Akiko Kobayashi, Masaru Hori, Takayoshi Tsutsumi
  • Patent number: 10501866
    Abstract: A gas distribution system is disclosed in order to obtain better film uniformity on a wafer. The better film uniformity may be achieved by utilizing an expansion plenum and a plurality of, for example, proportioning valves to ensure an equalized pressure or flow along each gas line disposed above the wafer.
    Type: Grant
    Filed: January 19, 2017
    Date of Patent: December 10, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Stephen Dale Coomer, Robert Vyne, Timo Bergman, Lee Bode, Wentao Wang
  • Patent number: 10504901
    Abstract: A substrate processing method includes stacking a plurality of stack structures each including an insulating layer and a sacrificial layer, on one another. The method also includes generating a stair structure by etching the stack structures and generating a separation layer on a side surface of the stair structure. The method further includes removing the sacrificial layer and generating conductive word line structures in spaces from which the sacrificial layer is removed. The separation layer is provided between the conductive word line structures.
    Type: Grant
    Filed: April 12, 2018
    Date of Patent: December 10, 2019
    Assignee: ASM IP HOLDING B.V.
    Inventors: Tae Hee Yoo, Yoon Ki Min, Yong Min Yoo
  • Patent number: 10490475
    Abstract: In some embodiments, a semiconductor surface may be effectively passivated by nitridation, preferably using hydrazine, a hydrazine derivative, or a combination thereof. The surface may be the semiconductor surface of a transistor channel region. In some embodiments, native oxide is removed from the semiconductor surface and the surface is subsequently nitrided. In some other embodiments, a semiconductor surface oxide layer is formed at the semiconductor surface and the passivation is accomplished by forming a semiconductor oxynitride layer at the surface, with the nitridation contributing nitrogen to the surface oxide to form the oxynitride layer. The semiconductor oxide layer may be deposited by atomic layer deposition (ALD) and the nitridation may also be conducted as part of the ALD.
    Type: Grant
    Filed: May 31, 2016
    Date of Patent: November 26, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Qi Xie, Fu Tang, Michael Givens, Petri Raisanen, Jan Willem Maes, Xiaoqiang Jiang
  • Patent number: 10480072
    Abstract: A reactor having a housing that encloses a gas delivery system operatively connected to a reaction chamber and an exhaust assembly. The gas delivery system includes a plurality of gas lines for providing at least one process gas to the reaction chamber. The gas delivery system further includes a mixer for receiving the at least one process gas. The mixer is operatively connected to a diffuser that is configured to diffuse process gases. The diffuser is attached directly to an upper surface of the reaction chamber, thereby forming a diffuser volume therebetween. The diffuser includes at least one distribution surface that is configured to provide a flow restriction to the process gases as they pass through the diffuser volume before being introduced into the reaction chamber.
    Type: Grant
    Filed: June 14, 2016
    Date of Patent: November 19, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Eric James Shero, Mohith E. Verghese, Carl Louis White, Herbert Terhorst, Dan Maurice