Patents Assigned to ASML Masktools Netherlands B.V.
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Patent number: 7735052Abstract: Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle.Type: GrantFiled: August 14, 2006Date of Patent: June 8, 2010Assignee: ASML Masktools Netherlands B.V.Inventors: Xuelong Shi, Jang Fung Chen, Duan-Fu Stephen Hsu
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Publication number: 20050034096Abstract: Optical proximity effects (OPEs) are a well-known phenomenon in photolithography. OPEs result from the structural interaction between the main feature and neighboring features. It has been determined by the present inventors that such structural interactions not only affect the critical dimension of the main feature at the image plane, but also the process latitude of the main feature. Moreover, it has been determined that the variation of the critical dimension as well as the process latitude of the main feature is a direct consequence of light field interference between the main feature and the neighboring features. Depending on the phase of the field produced by the neighboring features, the main feature critical dimension and process latitude can be improved by constructive light field interference, or degraded by destructive light field interference. The phase of the field produced by the neighboring features is dependent on the pitch as well as the illumination angle.Type: ApplicationFiled: September 13, 2004Publication date: February 10, 2005Applicant: ASML Masktools Netherlands B.V.Inventors: Xuelong Shi, Jang Chen, Duan-Fu Hsu
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Publication number: 20040067423Abstract: A method of forming a hybrid mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of forming at least one non-critical feature on the mask utilizing one of a low-transmission phase-shift mask (pattern) and a non-phase shifting mask (pattern), and forming at least one critical feature on the mask utilizing a high-transmission phase-shift mask (pattern).Type: ApplicationFiled: September 16, 2003Publication date: April 8, 2004Applicant: ASML MASKTOOLS NETHERLANDS B.V.Inventors: Jang Fung Chen, Roger Caldwell, Thomas Laidig, Kurt E. Wampler
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Patent number: 6670081Abstract: A method of forming a mask for optically transferring a lithographic pattern onto a substrate by use of an optical exposure tool, where the pattern comprises a plurality of features each of which has corresponding edges and vertices. The method includes the steps of forming a serif on a plurality of the vertices contained in the lithographic pattern, where each of the serifs has a rectangular shape, and determining the size of each serif independently on the basis of the length of the feature edges touching a given vertex, and the horizontal and vertical distance of the given vertex to the nearest feature edge, wherein the position of each side of a given serif is independently adjustable relative to the length of the remaining sides of the given serif.Type: GrantFiled: June 11, 2001Date of Patent: December 30, 2003Assignee: ASML Masktools Netherlands B.V.Inventors: Thomas Laidig, Kurt E. Wampler
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Patent number: 6623895Abstract: A method of forming a hybrid mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of forming at least one non-critical feature on the mask utilizing one of a low-transmission phase-shift mask (pattern) and a non-phase shifting mask (pattern), and forming at least one critical feature on the mask utilizing a high-transmission phase-shift mask (pattern).Type: GrantFiled: April 24, 2001Date of Patent: September 23, 2003Assignee: ASML Masktools Netherlands B.V.Inventors: Jang Fung Chen, Roger Caldwell, Thomas Laidig, Kurt E. Wampler
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Publication number: 20030098970Abstract: A method of detecting aberrations associated with a projection lens utilized in an optical lithography system. The method includes the steps of forming a mask for transferring a lithographic pattern onto a substrate, forming a plurality of non-resolvable features disposed on the mask, where the plurality of non-resolvable features are arranged so as to form a predetermined pattern on the substrate, exposing the mask using an optical exposure tool so as to print the mask on the substrate, and analyzing the position of the predetermined pattern formed on the substrate and the position of the plurality of non-resolvable features disposed on the mask so as to determine if there is an aberration. If the position of the predetermined pattern formed on the substrate differs from an expected position, which is determined from the position of the plurality of non-resolvable features, this shift from the expected position indicates the presence of an aberration.Type: ApplicationFiled: December 6, 2000Publication date: May 29, 2003Applicant: ASML MASKTOOLS NETHERLANDS B.V.Inventor: J. Fung Chen
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Patent number: 6541167Abstract: Method for utilizing halftoning structures to manipulate the relative magnitudes of diffraction orders to ultimately construct the desired projected-image. At the resolution limit of the mask maker, this is especially useful for converting strongly shifted, no-0th-diffraction-order, equal-line-and-space chromeless phase edges to weak phase-shifters that have some 0th order. Halftoning creates an imbalance in the electric field between the shifted regions, and therefore results in the introduction of the 0th diffraction order.Type: GrantFiled: April 24, 2001Date of Patent: April 1, 2003Assignee: ASML Masktools Netherlands B.V.Inventors: John S. Petersen, Jang Fung Chen
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Patent number: 6482555Abstract: A method for making a mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of de-composing the existing mask patterns into arrays of “imaging elements.” The imaging elements are &pgr;-phase shifted and are separated by non-phase shifting and sub-resolution elements referred to as anti-scattering bars (ASBs). In essence, the ASBs are utilized to de-compose the larger-than-minimum-width mask features to form “halftone-like” imaging patterns. The placement of the ASBs and the width thereof are such that none of the &pgr;-phase shifting elements are individually resolvable, but together they form patterns substantially similar to the intended mask features.Type: GrantFiled: October 15, 2001Date of Patent: November 19, 2002Assignee: ASML Masktools Netherlands B.V.Inventors: J. Fung Chen, Roger Caldwell, Tom Laidig, Kurt E. Wampler
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Publication number: 20020048708Abstract: A method for making a mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of de-composing the existing mask patterns into arrays of “imaging elements.” The imaging elements are &pgr;-phase shifted and are separated by non-phase shifting and sub-resolution elements referred to as anti-scattering bars (ASBs). In essence, the ASBs are utilized to de-compose the larger-than-minimum-width mask features to form “halftone-like” imaging patterns. The placement of the ASBs and the width thereof are such that none of the &pgr;-phase shifting elements are individually resolvable, but together they form patterns substantially similar to the intended mask features.Type: ApplicationFiled: October 15, 2001Publication date: April 25, 2002Applicant: ASML MASKTOOLS NETHERLANDS B.V.Inventors: J. Fung Chen, Roger Caldwell, Tom Laidig, Kurt E. Wampler
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Patent number: 6335130Abstract: Method for utilizing halftoning structures to manipulate the relative magnitudes of diffraction orders to ultimately construct the desired projected-image. At the resolution limit of the mask maker, this is especially useful for converting strong shifted, no 0th diffraction order, equal line and space chromeless phase edges to weak phase shifters that have some 0th order. Halftoning creates an imbalance in the electric field between the shifted regions and therefore results in the introduction of the 0th diffraction order.Type: GrantFiled: May 1, 2000Date of Patent: January 1, 2002Assignee: ASML Masktools Netherlands B.V.Inventors: J. Fung Chen, John S. Petersen
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Patent number: 6312854Abstract: A method for making a mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The method includes the steps of de-composing the existing mask patterns into arrays of “imaging elements.” The imaging elements are &pgr;-phase shifted and are separated by non-phase shifting and sub-resolution elements referred to as anti-scattering bars (ASBs). In essence, the ASBs are utilized to de-compose the larger-than-minimum-width mask features to form “halftone-like” imaging patterns. The placement of the ASBs and the width thereof are such that none of the &pgr;-phase shifting elements are individually resolvable, but together they form patterns substantially similar to the intended mask features.Type: GrantFiled: March 16, 1999Date of Patent: November 6, 2001Assignee: ASML Masktools Netherlands B.V.Inventors: J. Fung Chen, Roger Caldwell, Tom Laidig, Kurt E. Wampler
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Patent number: 6114071Abstract: A photolithography mask for optically transferring a lithographic pattern corresponding to an integrated circuit from the mask onto a semiconductor substrate by use of an optical exposure tool. The mask comprises a plurality of features corresponding to elements forming the integrated circuit, and a plurality of non-resolvable biasing segments disposed on an edge of at least one of the features.Type: GrantFiled: April 6, 1998Date of Patent: September 5, 2000Assignee: ASML Masktools Netherlands B.V.Inventors: J. Fung Chen, Kurt E. Wampler, Tom Laidig
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Patent number: RE40084Abstract: Method for utilizing halftoning structures to manipulate the relative magnitudes of diffraction orders to ultimately construct the desired projected-image. At the resolution limit of the mask maker, this is especially useful for converting strongly shifted, no-0th-diffraction-order, equal-line-and-space chromeless phase edges to weak phase-shifters that have some 0th order. Halftoning creates an imbalance in the electric field between the shifted regions, and therefore results in the introduction of the 0th diffraction order.Type: GrantFiled: February 11, 2005Date of Patent: February 19, 2008Assignee: ASML Masktools Netherlands B.V.Inventors: John S. Petersen, Jang Fung Chen