Abstract: A method and associated computer program and apparatuses for determining a correction for at least one control parameter, the at least one control parameter for controlling a semiconductor manufacturing process so as to manufacture semiconductor devices on a substrate. The method includes: obtaining metrology data relating to the semiconductor manufacturing process or at least part thereof; obtaining associated data relating to the semiconductor manufacturing process or at least part thereof, the associated data providing information for interpreting the metrology data; and determining the correction based on the metrology data and the associated data, wherein the determining is such that the determined correction depends on a degree to which a trend and/or event in the metrology data should be corrected based on the interpretation of the metrology data.

Abstract: The invention provides a method of determining a motor-dependent commutation model for an electromagnetic motor, whereby the electromagnetic motor comprises a first member comprising a coil array comprising at least M coils, and a second member comprising a magnet array configured to generate a spatially alternating magnetic field, whereby the first member and the second member are configured to displace relative to each other in N degrees of freedom, N<M, by supplying the at least M coils with respective at least M currents Im, thereby generating forces in the N degrees of freedom, the method comprising the steps of: obtaining a commutation model G for the electromagnetic motor, the general commutation model G providing a relationship between desired forces Fc in the N degrees of freedom and the at least M currents Im applied to the coil array by Im=G*Fc.

Abstract: A method for generating a mask pattern for a lithographic process. The method involves generating a smoothed representation of a segmented mask pattern by applying a first smoothing function and adjusting the segmented mask pattern by with a set of changes to one or more of the plurality of segmented features. Further, a patterning process simulation is performed in an iterative manner by using the smoothed mask pattern of an adjusted segmented mask pattern until a termination condition is satisfied. In each iteration, upon adjusting the segmented mask pattern, a smoothed mask pattern is generated and used by process models to simulate the patterning process. Once the termination condition is satisfied, a resultant segmented mask pattern is obtained. Then, a final mask pattern is generated by applying a second smoothing function to a resultant segmented mask pattern.

Abstract: Disclosed herein is a platform for a charged particle apparatus, the platform comprising: a base frame; a chamber arranged to comprise a substrate; a metrology frame arranged to support a charged particle beam generator for irradiating a substrate in the chamber with a charged particle beam; and a bellow arranged between the metrology frame and the chamber; wherein: the chamber is rigidly connected to the base frame; the bellow comprises a flexible material such that the metrology frame is substantially isolated from any vibrations that are generated in the chamber; and the bellow is air tight so that a substantial vacuum may be established in the chamber.

Abstract: A contamination reduction system for reducing contamination of a patterning system in a plasma environment, comprising: a support arranged to hold a patterning system in a radiation beam; a shutter configured to shield a portion of the radiation beam from the patterning system; and an electrode positioned between the shutter and the support, the electrode connected to a voltage source and configured to generate an electric field between the electrode and the patterning system held by the support.

Abstract: Optically determining whether metallic features in different layers in a structure are in electrical contact with each other. When the metallic features include different metals and/or have different dimensions, which cause one or more resonances in reflected radiation to be detected, the metallic features in the different layers are determined to be in contact or out of contact with each other based on the spectral positions of the one or more resonances. When the metallic features are formed from the same metal and have the same dimensions, the metallic features in the different layers are determined to be in contact with each other responsive to detection of a single resonance associated with the metallic features and out of contact with each other responsive to detection of two or more resonances associated with the metallic features.

Abstract: A defect prediction method for a device manufacturing process involving processing one or more patterns onto a substrate, the method including: determining values of one or more processing parameters under which the one or more patterns are processed; and determining or predicting, using the values of the one or more processing parameters, an existence, a probability of existence, a characteristic, and/or a combination selected from the foregoing, of a defect resulting from production of the one or more patterns with the device manufacturing process.

Abstract: A method for calibrating a process model and training an inverse process model of a patterning process. The training method includes obtaining a first patterning device pattern from simulation of an inverse lithographic process that predicts a patterning device pattern based on a wafer target layout, receiving wafer data corresponding to a wafer exposed using the first patterning device pattern, and training an inverse process model configured to predict a second patterning device pattern using the wafer data related to the exposed wafer and the first patterning device pattern.

Abstract: Methods for optimizing an aspect of a patterning process based on defects. For example, a method of source and mask optimization of a patterning process includes obtaining a location on a substrate having a threshold probability of having a defect; defining an defect ambit around the location to include a portion of a pattern on the substrate and one or more evaluation points associated with the portion of the pattern; determining a value of a first cost function based on a defect metric associated with the defect; determining a first guide function for the first cost function, wherein the first guide function is associated with a performance metric of the patterning process at the one or more evaluation locations within the defect ambit; and adjusting a source and/or a mask characteristic based on the value of the first cost function, and the first guide function.

Abstract: A lithographic apparatus includes an illumination system, a projection system, a temperature-sensitive object, and a temperature sensor that includes a detector and waveguide device that is thermally coupled to the temperature-sensitive object and includes an input end, a downstream end, and first and second scattering features. The illumination system illuminates a pattern of a patterning device. The projection system projects an image of the pattern onto a substrate. Based on temperature, the first scattering feature reflects a first spectrum. Radiation not reflected by the first scattering feature is allowed downstream. Based on temperature, the second scattering feature reflects a second spectrum different from the first spectrum. Radiation not reflected by the second scattering feature is allowed downstream. The detector is disposed to receive radiation including the reflected first and second spectra from the input end and generates a measurement signal based on the received radiation.

Abstract: An optical element, and a metrology tool or system employing the optical element for measurements of structures on a substrate. The optical element includes a first portion configured to reflect the light received from an illumination source towards the substrate, and a second portion configured to transmit the light redirected from the substrate or a desired location, the first portion having a higher coefficient of reflectivity than the second portion, and the second portion having a higher coefficient of transmissivity than the first portion. A metrology tool may include the optical elements and a sensor configured to receive a diffraction pattern caused by radiation redirected from a substrate, and a processor configured to receive a signal relating to the diffraction pattern from the sensor, and determine overlay associated with the substrate by analyzing the signal.

Abstract: A wafer including a mask on one face and at least one layer on an opposite face, wherein the mask has at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle, the method including: providing a wafer having a mask on one face and at least one layer on an opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle, the method including: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidizing environment. In any aspect, the pellicle may include a metal nitride layer.

Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.

Abstract: A method for determining stochastic edge placement error associated with a pattern. The method includes acquiring, via a metrology tool, a plurality of images of the pattern at a defined location on the substrate without performing a substrate alignment therebetween; and generating at least two data: (i) first data associated with the pattern using a first set of images of the plurality of images, and (ii) second data associated with the pattern using a second set of images of the plurality of images. The first set of images and the second set of images include at least one different image. The method further includes determining (e.g., via a decomposition algorithm), using the first data and the second data associated with the pattern at the defined location, the stochastic edge placement error associated with the pattern.

Abstract: A method for generating a sampling scheme for a device manufacturing process, the method including: obtaining a measurement data time series of a plurality of processed substrates; transforming the measurement data time series to obtain frequency domain data; determining, using the frequency domain data, a temporal sampling scheme; determining an error offset introduced by the temporal sampling scheme on the basis of measurements on substrates performed according to the temporal sampling scheme; and determining an improved temporal sampling scheme to compensate the error offset.

Abstract: Disclosed herein is a method comprising depositing a first amount of electric charges into a region of a sample, during a first time period; depositing a second amount of electric charges into the region, during a second time period; while scanning a probe spot generated on the sample by a beam of charged particles, recording from the probe spot signals representing interactions of the beam of charged particles and the sample; wherein an average rale of deposition during the first time period, and an average rate of deposition during the second time period are different.

Abstract: Disclosed is an apparatus and a method in which off-droplet measurements instead of on-droplet measurements of prepulse energy are used for pulse energy control. Prepulse energy is measured during an off-droplet nonexposure period and controlled to a prepulse energy setpoint. The prepulse energy can then be controlled open-loop to the prepulse energy setpoint during on-droplet periods. This effectively decouples the EUV dose control loop from the prepulse energy control loop and avoids negative side effects of coupling such loops, for example, loss of the part of the dose adjustment range available to the dose controller.

Abstract: Disclosed is a detection apparatus for simultaneous acquisition of multiple images of an object at a plurality of different focus levels; comprising: a modulator for obtaining multiple beam copies of an incoming beam; and a detector operable to capture said multiple beam copies, such that at two of said multiple beam copies are captured at different focus levels. Also disclosed is an inspection apparatus comprising such a detection system.

Abstract: A multi-beam apparatus for observing a sample with high resolution and high throughput is proposed. In the apparatus, a source-conversion unit changes a single electron source into a virtual multi-source array, a primary projection imaging system projects the array to form plural probe spots on the sample, and a condenser lens adjusts the currents of the plural probe spots. In the source-conversion unit, the image-forming means is on the upstream of the beamlet-limit means, and thereby generating less scattered electrons. The image-forming means not only forms the virtual multi-source array, but also compensates the off-axis aberrations of the plurality of probe spots.

Abstract: Embodiments herein describe systems, methods, and devices for thermal conditioning of patterning devices at a litho-graphic apparatus. A patterning device cooling system for thermally conditioning a patterning device (202) of a lithographic apparatus is described, the cooling system including a thermal conditioner that thermally conditions the patterning device, and a controller that controls the thermal conditioner to determine a temperature state of the patterning device, determine a production state of the litho-graphic apparatus, and thermally condition the patterning device for exposures based on the temperature state and a production state of the lithographic apparatus.