Abstract: A method of creating electronic devices such as semiconductor chips using a maskless lithographic exposure system such as a charged particle multi-beamlet lithography system (301A-301D). The maskless lithographic exposure system comprises a lithography subsystem (316) including a maskless pattern writer such as a charged particle multi-beamlet lithography machine (1) or ebeam machine. The method comprises introducing unique chip design data (430) or information related thereto into pattern data comprising common chip design data before streaming the pattern data to the maskless pattern writer.

Abstract: An apparatus for measuring a parameter of a structure related to a semiconductor manufacturing process. The apparatus comprises a source assembly configured to provide measurement radiation having one or more first wavelengths for irradiating the structure on a substrate. The apparatus further comprises a filter arranged to receive scattered measurement radiation that has scattered from the structure, wherein the filter is configured to transmit the scattered measurement radiation at the one or more first wavelengths and filter out radiation at one or more second wavelengths. The filter comprises a film with a curvature in at least one direction. The apparatus further comprises a plurality of detectors, located downstream of the filter, configured to detect the filtered scattered radiation configured to measure the parameter of the structure.

Abstract: A radiation source for an EUV lithography apparatus is disclosed. The radiation source comprises a chamber comprising a plasma formation region, a radiation collector arranged in the chamber and configured to collect radiation emitted at the plasma formation region and to direct the collected radiation towards an intermediate focus region, and a radiation conduit disposed between the radiation collector and the intermediate focus region. The radiation conduit comprises at least one outlet on an inner surface of a wall of the radiation conduit for directing a protective gas flow, and at least one guide portion extending from the inner surface of the wall of the radiation conduit and configured to redirect the protective gas flow. Also disclosed is a method of reducing debris and/or vapor deposition in the radiation conduit by providing a protective gas flow to the at least one outlet of the radiation conduit.

Abstract: The device includes a beam source for generating an electron beam, a beam guiding tube passed through an objective lens, an objective lens for generating a magnetic field in the vicinity of the specimen to focus the particles of the particle beam on the specimen, a control electrode having a potential for providing a retarding field to the particle beam near the specimen to reduce the energy of the particle beam when the beam collides with the specimen, a deflection system including a plurality of deflection units situated along the optical axis for deflecting the particle beam to allow scanning on the specimen with large area, at least one of the deflection units located in the retarding field of the beam, the remainder of the deflection units located within the central bore of the objective lens, and a detection unit to capture secondary electron (SE) and backscattered electrons (BSE).

Abstract: Systems, apparatuses, and methods are provided for detecting a particle on a substrate surface. An example method can include receiving, by a grating structure, coherent radiation from a radiation source. The method can further include generating, by the grating structure, a focused coherent radiation beam based on the coherent radiation. The method can further include transmitting, by the grating structure, the focused coherent radiation beam toward a region of a surface of a substrate. The method can further include receiving, by the grating structure, photons scattered from the region in response to illuminating the region with the focused coherent radiation beam. The method can further include measuring, by a photodetector, the photons received by the grating structure. The method can further include generating, by the photodetector and based on the measured photons, an electronic signal for detecting a particle located in the region of the surface of the substrate.

Abstract: A sample inspection tool is described. The inspection tool includes a light source configured to produce effective inspection radiation below 200 nm, a sample holder, an imaging sub-system containing sub-system components that delivers light along an optical path from the light source to a sample to be held by the sample holder, and a barrier positioned between the last sub-system component in the optical path and the sample to be held by the sample holder. The barrier permits the radiation to pass therethrough while inhibiting impurities from reaching the sample to be held by the sample holder. In another embodiment, a barrier is provided for use in an inspection tool.

Abstract: Disclosed is a method for determining a focus parameter from a target on a substrate. The target comprises an isofocal first sub-target and a second non-isofocal sub-target. The method comprises obtaining a first measurement signal relating to measurement of the first sub-target, a second measurement signal relating to measurement of the second sub-target and at least one trained relationship and/or model which relates at least said second measurement signal to said focus parameter. A value for said focus parameter is determined from said first measurement signal, second measurement signal and said at least one trained relationship and/or model.

Abstract: Disclosed is a method of determining a value for a parameter of interest from a target on a substrate. The method comprises obtaining metrology data comprising single-wavelength parameter of interest values which were obtained using a respective different measurement wavelength; and determining said value for the parameter of interest from a stack sensitivity derived weighted combination of said single-wavelength parameter of interest values. Also disclosed is a method of selecting wavelengths for a measurement based on at least the derivative of the stack sensitivity with respect to wavelength.

Abstract: A height measurement sensor comprising projection and detection units. The projection unit comprises a radiation source and a projection grating comprising a projection grating spot having a plurality of grating lines, the projection grating arranged to receive radiation and output a radiation beam onto the surface to create a radiation spot. The detection unit comprises: a detection grating comprising a detection grating spot having a plurality of grating lines; a detector arranged to receive a reflected radiation beam comprising radiation from the radiation spot after passing through the detection grating spot; and a controller configured to (i) obtain a detector output signal comprising a plurality of periodic components; (ii) take a derivative of two points at different locations of the output signal, wherein the two points are separated by a period of the periodic components, and (iii) determine a focus plane of the sensor when the derivative changes sign.

Abstract: A system includes an imaging system, a spatial filter, and a detector. The system is configured to receive a plurality of diffraction orders. The spatial filter is configured to block one or more undesired diffraction orders of the plurality of diffraction orders and to pass one or more desired diffraction orders of the plurality of diffraction orders. The spatial filter includes one or more obscurations having an angular dependent radius that varies azimuthally. The detector is configured to receive and measure an intensity of the one or more desired diffraction orders. The spatial filter is motorized.

Abstract: The present invention provides a fluid purging system (100) for an optical element (30), comprising a ring and a fluid supply system (40). The ring being formed of a body entirely surrounding the optical element, the ring defining a space (5) radially inwards thereof and adjacent to the optical element. The ring is formed by at least one first wall portion (10) and at least one second wall portion (20A; 20B), wherein an average height of the first wall portion is greater than an average height of the second wall portion. The fluid supply system is positioned radially outwards of the ring and configured to supply fluid to pass over the at least one second wall portion to the space.

Abstract: A droplet generator nozzle (800, 820/830) includes a metal body (802, 822), a metal fitting (812, 823/833) arranged adjacent to the metal body, and a capillary (804, 824/834) comprising a first end and a second end. The first end of the capillary is disposed within the metal fitting, and the capillary is configured to eject initial droplets of a material from the second end of the capillary. The droplet generator nozzle further includes an electromechanical element (808 828/838) disposed within the metal body and coupled to the first end of the capillary and a fastener element (810) configured to clamp around a portion of the metal body and around the metal fitting. The electromechanical element is configured to apply a change that affects droplet generation from the capillary. The second end of the capillary protrudes out from an opening in the fastener element of the droplet generator nozzle. Droplet generator nozzle 830 of FIG. 8C represents the embodiment shown in FIG.

Abstract: Disclosed is a metrology method and associated devices. The method comprises obtaining a first image, said first image being subject to one or more non-isoplanatic aberrations of an optical system used to capture said image; and non-iteratively correcting said first image for the effect of said one or more non-isoplanatic aberrations by performing one or both of: a field non-isoplanatic correction operation in field space for said first image, said field space corresponding to a field plane of the optical system; and a pupil non-isoplanatic correction operation in pupil space for said first image, said pupil space corresponding to a pupil plane of the optical system. Said one or more non-isoplanatic aberrations comprise a class of non-isoplanatic aberrations describable as a convolution combined with an object distortion and/or a pupil distortion.

Abstract: Disclosed is a method for modeling measurement data over a substrate area and associated apparatus. The method comprises obtaining measurement data relating to a first layout; modeling a second model based on said first layout; evaluating the second model on a second layout, the second layout being more dense than said first layout; and fitting a first model to this second model according to the second layout.

Abstract: Provided is an optical element for a lithographic apparatus. The optical element includes a capping layer that includes oxygen vacancies therein. The oxygen vacancies prevent attack of the capping layer by preventing hydrogen and other species from penetrating the capping layer and underlying layers. The capping layer provides a low hydrogen recombination rate enabling hydrogen to clean the surface of the optical element. The capping layer may include an alloyed metal, a mixed metal oxide or a doped metal oxide and it may be a ruthenium capping layer that includes one or more dopants therein.

Abstract: A method includes irradiating a target structure with sequential illumination shots, directing scattered beams from the target structure towards an imaging detector, generating a detection signal using the imaging detector, and determining a property of the target structure based on at least the detection signal. An integration time for each illumination shot of the sequential illumination shots is selected so to reduce a low frequency error.

Abstract: The disclosed embodiments relate to a charged particle source module for generating and emitting a charged particle beam, such as an electron beam, comprising: a frame including a first frame part, a second frame part, and one or more rigid support members which are arranged between said first frame part and said second frame part; a charged particle source arrangement for generating a charged particle beam, such as an electron beam, wherein said charged particle source arrangement, such as an electron source, is arranged at said second frame part; and a power connecting assembly arranged at said first frame part, wherein said charged particle source arrangement is electrically connected to said connecting assembly via electrical wiring.

Abstract: A method includes treating a burled surface of an object using radiation or heat and setting parameters of the radiation or heat to effectuate a predetermined surface strength, hardness, roughness, coefficient of friction, chemical resistance, wear resistance, and/or corrosion of the burled surface.

Abstract: Systems, apparatuses, and methods are provided for measuring intensity using off-axis illumination. An example method can include illuminating a region of a surface of a substrate with a first radiation beam at a first incident angle and, in response, measuring a first set of photons diffracted from the region. The example method can further include illuminating the region with a second radiation beam at a second incident angle and, in response, measuring a second set of photons diffracted from the region. The example method can further include generating measurement data for the region based on the measured first set of photons and the measured second set of photons.

Abstract: The present disclosure relates to apparatus and methods for assessing samples using a plurality of charged particle beams. In one arrangement, at least a subset of a beam grid of a plurality of charged particle beams and respective target portions of a sample surface are scanned relative to each other to process the target portions. Signal charged particles from the sample are detected to generate detection signals. A sample surface topographical map is generated that represents a topography of the sample surface by analyzing the detection signals.