Abstract: A lithographic apparatus includes a first table to support a substrate; a second table, not being configured to support a substrate, including a sensor unit to sense a property of a patterned beam of radiation from a projection system, the second table to move under the projection system when the first table is moved out from under the projection system during a substrate exchange, the first and second tables being independently movable from each other; and a liquid supply system to supply a liquid to a space between the projection system and the substrate, the first table, and/or the second table, wherein the second table is configured to provide a confining surface at a bottom of a liquid confinement structure when the first table is removed from under the projection system so as to prevent the liquid from leaking out into the remainder of the lithographic apparatus.

Abstract: A measurement system for a lithographic apparatus includes a sub-frame compliantly mounted on a reference frame. A measurement device, e.g. an alignment sensor, is mounted on the sub-frame. Soft mounting of the sub-frame isolates the alignment sensor from high-frequency disturbances, e.g. acoustic noise, by acting as a low-pass filter with a cut-off frequency, e.g. in the range of from 100 to 200 Hz.

Abstract: Metrology apparatus and methods are disclosed. In one arrangement, a metrology apparatus comprises an optical system that illuminates a structure with measurement radiation and detects the measurement radiation scattered by the structure. The optical system comprises an array of lenses that focusses the scattered measurement radiation onto a sensor. A dispersive element directs scattered measurement radiation in each of a plurality of non-overlapping wavelength bands exclusively onto a different respective lens of the array of lenses.

Abstract: A radiation sensor apparatus for determining a position and/or power of a radiation beam, the radiation sensor apparatus including a chamber to contain a gas, one or more sensors, and a processor. The chamber has a first opening and a second opening such that a radiation beam can enter the chamber through the first opening, propagate through the chamber generally along an axis, and exit the chamber through the second opening. Each of the one or more sensors is arranged to receive and detect radiation emitted from a region of the chamber around the axis. The processor is operable to use the radiation detected by the one or more sensors to determine a position and/or power of the radiation beam.

Abstract: A porous member is used in a liquid removal system of an immersion lithographic projection apparatus to smooth uneven flows. A pressure differential across the porous member may be maintained at below the bubble point of the porous member so that a single-phase liquid flow is obtained. Alternatively, the porous member may be used to reduce unevenness in a two-phase flow.

Abstract: A fluid handling structure, lithographic apparatus and device manufacturing method are disclosed. According to a disclosed embodiment, the fluid handling structure is configured to confine an immersion fluid in a space between a final element of a projection system and a facing surface during movement of the facing surface relative to the structure, wherein the structure has at least one heater to heat a portion of the facing surface adjacent to the heater, the at least one heater having a fluid heater to heat fluid flow from the structure onto the facing surface, the heater thereby heating the portion.

Abstract: A method to determine an overlay error between a first structure and a second structure, wherein the first structure and second structures are on different layers on a substrate and are imaged onto the substrate by a lithographic process, the method comprising: obtaining an apparent overlay error; obtaining a systematic error caused by a factor other than misalignment of the first and second structures; and determining the overlay error by removing the systematic error from the apparent overlay error. The method may alternatively comprise obtaining apparent characteristics of diffraction orders of diffraction by an overlapping portion of the first and second structures; obtaining corrected characteristics of the diffraction orders; determining the overlay error from the corrected characteristics; and adjusting a characteristic of the lithographic process based on the overlay error.

Abstract: A system for an extreme ultraviolet (EUV) light source includes a light-generation system configured to emit one or more light beams onto a beam path; one or more optical amplifiers, each of the one or more amplifiers including a gain medium on the beam path, each gain medium being configured to amplify the one or more light beams to produce one or more amplified light beams; and one or more diffractive optical elements on the beam path, where each of the one or more diffractive optical elements has a plurality of focal lengths, and each focal length of the diffractive optical element is associated with a particular polarization state.

Abstract: A method of patterning substrates using a lithographic apparatus. The method comprising providing a beam of radiation using an illumination system, using a patterning device to impart the radiation beam with a pattern in its cross-section, and using a projection system to project the patterned radiation beam onto target portions of a lot of substrates, wherein the method further comprises performing a radiation beam aberration measurement after projecting the patterned radiation beam onto a subset of the lot of substrates, performing an adjustment of the projection system using the results of the radiation beam aberration measurement, then projecting the patterned radiation beam onto a further subset of the lot of substrates.

Abstract: The present invention determines property of a target (30) on a substrate (W), such as a grating on a wafer. An inspection apparatus has an illumination source (702, 710) with two or more illumination beams (716, 716?, 716?, 716??) in the pupil plane of a high numerical aperture objective lens (L3). The substrate and target are illuminated via the objective lens from different angles of incidence with respect to the plane of the substrate. In the case of four illumination beams, a quad wedge optical device (QW) is used to separately redirect diffraction orders of radiation scattered from the substrate and separates diffraction orders from the two or more illumination beams. For example four 0th diffraction orders are separated for four incident directions. After capture in multimode fibers (MF), spectrometers (S1-S4) are used to measure the intensity of the separately redirected 0th diffraction orders as a function of wavelength. This may then be used in determining a property of a target.

Abstract: A lithographic apparatus includes an optical element that includes an oriented carbon nanotube sheet. The optical element has an element thickness in the range of about 20-500 nm and has a transmission for EUV radiation having a wavelength in the range of about 1-20 nm of at least about 20% under perpendicular irradiation with the EUV radiation.

Abstract: A stage positioning system, includes a first body, a second body and a coupling arranged to couple the first body and the second body to each other. The coupling includes a visco-elastic element arranged to couple the first body and the second body to each other. The stage positioning system may further include a sensor to provide a signal representative of a position of the first body. The stage positioning system may further include an actuator to move the first body. The second body may be arranged to couple the actuator and the coupling to each other.

Abstract: A support table configured to support a substrate, the support table having a support section to support a substrate and a conditioning system to supply heat energy to and/or remove heat energy from the support section, wherein the conditioning system comprises a plurality of conditioning units that are independently controllable.

Abstract: In a lithographic projection apparatus, a liquid supply system maintains liquid in a space between a projection system of the lithographic projection apparatus and a substrate. A sensor positioned on a substrate table, which holds the substrate, is configured to be exposed to radiation when immersed in liquid (e.g., under the same conditions as the substrate will be exposed to radiation). By having a surface of an absorption element of the sensor, that is to be in contact with liquid, formed of no more than one metal type, long life of the sensor may be obtained.

Abstract: A liquid supply system for an immersion lithographic projection apparatus is disclosed in which a space is defined between the projection system, a barrier member and a substrate. The barrier member is not sealed such that, during use, immersion liquid is allowed to flow out the space and between the barrier member and the substrate.

Abstract: A method including performing a simulation to evaluate a plurality of metrology targets and/or a plurality of metrology recipes used to measure a metrology target, identifying one or more metrology targets and/or metrology recipes from the evaluated plurality of metrology targets and/or metrology recipes, receiving measurement data of the one or more identified metrology targets and/or metrology recipes, and using the measurement data to tune a metrology target parameter or metrology recipe parameter.

Abstract: Disclosed is a patterning device configured to pattern a beam of radiation according to a desired pattern during a lithographic process. The patterning device comprises first features configured to form a first target on a substrate during the lithographic process and second features configured to form a second target on the substrate during the lithographic process. The second features are taller, in a direction transverse to the plane of the first and second targets, than the first features, such that the first and second targets have a relative best focus offset.

Abstract: In an immersion lithography apparatus in which immersion liquid is supplied to a localized space, the space is substantially polygonal in plan substantially parallel to the substrate. In an embodiment, two corners of the space have a radius of curvature no greater than the width of a transition zone between the space configured to contain liquid and a surrounding configured not to contain liquid.

Abstract: An optical inspection apparatus, including: an optical metrology tool configured to measure structures, the optical metrology tool including: an electromagnetic (EM) radiation source configured to direct a beam of EM radiation along an EM radiation path; and an adaptive optical system disposed in a portion of the EM radiation path and configured to adjust a shape of a wave front of the beam of EM radiation, the adaptive optical system including: a first aspherical optical element; a second aspherical optical element adjacent the first aspherical optical element; and an actuator configured to cause relative movement between the first optical element and the second optical element in a direction different from a beam axis of the portion of the EM radiation path.

Abstract: In a lithographic apparatus, a localized area of the substrate surface under a projection system is immersed in liquid. The height of a liquid supply system above the surface of the substrate can be varied using actuators. A control system uses feedforward or feedback control with input of the surface height of the substrate to maintain the liquid supply system at a predetermined height above the surface of the substrate.