Patents Assigned to ASML Netherlands
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Patent number: 11409206Abstract: A method of determining a position of a feature (for example an alignment mark) on an object (for example a silicon wafer) is disclosed. The method comprises determining an offset parameter, determining the second position; and determining a first position from the second position and the offset parameter, the position of the mark being the first position. The offset parameter is a measure of a difference in: a first position that is indicative of the position of the feature; and a second position that is indicative of the position of the feature. The offset parameter may be determined using a first measurement apparatus and the second position may be determined using a second, different measurement apparatus.Type: GrantFiled: April 2, 2019Date of Patent: August 9, 2022Assignee: ASML Netherlands B.V.Inventors: Sebastianus Adrianus Goorden, Simon Reinald Huisman
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Patent number: 11409204Abstract: A method, includes illuminating a structure of a metrology target with radiation having a linear polarization in a first direction, receiving radiation redirected from the structure to a polarizing element, wherein the polarizing element has a polarization splitting axis at an angle to the first direction, and measuring, using the sensor system, an optical characteristic of the redirected radiation.Type: GrantFiled: May 22, 2020Date of Patent: August 9, 2022Assignee: ASML Netherlands B.V.Inventor: Sergey Tarabrin
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Publication number: 20220247143Abstract: A broadband source device configured for generating broadband radiation or white light output. The broadband source device includes a gas cell, and a hollow-core photonic crystal fiber at least partially enclosed within the gas cell. A gas mixture is within the gas cell and the hollow-core photonic crystal fiber. The gas mixture includes at least one Raman active molecular gas constituting more than 2% of the gas mixture, such that the broadband source device operates in a balanced Kerr-Raman nonlinear interaction regime.Type: ApplicationFiled: June 3, 2020Publication date: August 4, 2022Applicant: ASML NETHERLANDS B.V.Inventor: Amir ABDOLVAND
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Publication number: 20220246395Abstract: Systems and methods for observing a sample in a multi-beam apparatus are disclosed. A charged particle optical system may include a deflector configured to form a virtual image of a charged particle source and a transfer lens configured to form a real image of the charged particle source on an image plane. The image plane may be formed at least near a beam separator that is configured to separate primary charged particles generated by the source and secondary charged particles generated by interaction of the primary charged particles with a sample. The image plane may be formed at a deflection plane of the beam separator. The multi-beam apparatus may include a charged-particle dispersion compensator to compensate dispersion of the beam separator. The image plane may be formed closer to the transfer lens than the beam separator, between the transfer lens and the charged-particle dispersion compensator.Type: ApplicationFiled: April 11, 2022Publication date: August 4, 2022Applicant: ASML Netherlands B.V.Inventors: Weiming REN, Xuedong LIU, Xuerang HU, Zong-wei CHEN
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Publication number: 20220244649Abstract: A method for determining an intra-field correction for control of a lithographic apparatus configured for exposing a pattern on an exposure field of a substrate, the method includes: obtaining metrology data for use in determining the intra-field correction; determining an accuracy metric indicating a lower accuracy where the metrology data is not reliable and/or where the lithographic apparatus is limited in actuating a potential actuation input which is based on the metrology data; and determining the intra-field correction based at least partially on the accuracy metric.Type: ApplicationFiled: June 10, 2020Publication date: August 4, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Pieter Gerardus Jacobus SMORENBERG, Putra SAPUTRA, Paul DERWIN, Khalid ELBATTAY
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Publication number: 20220245787Abstract: A defect inspection system is disclosed. According to certain embodiments, the system includes a memory storing instructions implemented as a plurality of modules. Each of the plurality of modules is configured to detect defects having a different property. The system also includes a controller configured to cause the computer system to: receive inspection data representing an image of a wafer; input the inspection data to a first module of the plurality of modules, the first module outputs a first set of points of interests (POIs) having a first property; input the first set of POIs to a second module of the plurality of modules, the second module output a second set of POIs having the second property; and report that the second set of POIs as defects having both the first property and the second property.Type: ApplicationFiled: April 18, 2022Publication date: August 4, 2022Applicant: ASML Netherlands B.V.Inventors: Zhichao CHEN, Wei FANG
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Publication number: 20220245780Abstract: An inspection method includes the following steps: identifying a plurality of patterns within an image; and comparing the plurality of patterns with each other for measurement values thereof. The above-mentioned inspection method uses the pattern within the image as a basis for comparison; therefore, measurement values of the plurality of pixels constructing the pattern can be processed with statistical methods and then compared, and the false rate caused by variation of a few pixels is decreased significantly. An inspection system implementing the above-mentioned method is also disclosed.Type: ApplicationFiled: February 14, 2022Publication date: August 4, 2022Applicant: ASML Netherlands B.V.Inventors: Wei FANG, Zhao-Li ZHANG, Jack JAU
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Publication number: 20220244651Abstract: An apparatus for measuring a height of a substrate for processing in a lithographic apparatus is disclosed. The apparatus comprises a first sensor for sensing a height of the substrate over a first area. The apparatus also comprises a second sensor for sensing a height of the substrate over a second area. The apparatus further comprises a processor adapted to normalize first data corresponding to a signal from the first sensor with a second sensor footprint to produce a first normalized height data, and to normalize second data corresponding to a signal from the second sensor with a first sensor footprint to produce a second normalized height data. The processor is adapted to determine a correction to a measured height of the substrate based on a difference between the first and second normalized height data.Type: ApplicationFiled: June 15, 2020Publication date: August 4, 2022Applicant: ASML Netherlands B.V.Inventors: Andrey Valerievich ROGACHEVSKIY, Martin Jules Marie-Emile DE NIVELLE, Arjan GIJSBERTSEN, Willem Richard PONGERS, Viktor TROGRLIC
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Publication number: 20220246391Abstract: A multi-cell detector may include a first layer having a region of a first conductivity type and a second layer including a plurality of regions of a second conductivity type. The second layer may also include one or more regions of the first conductivity type. The plurality of regions of the second conductivity type may be partitioned from one another, preferably by the one or more regions of the first conductivity type of the second layer. The plurality of regions of the second conductivity type may be spaced apart from one or more regions of the first conductivity type in the second layer. The detector may further include an intrinsic layer between the first and second layers.Type: ApplicationFiled: January 10, 2022Publication date: August 4, 2022Applicant: ASML Netherlands B.V.Inventors: Joe WANG, Yongxin WANG, Zhongwei CHEN, Xuerang HU
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Patent number: 11400541Abstract: A method for producing a component from two plates, which are electrically isolating, at least one is optically transparent, and between them at least one planar conductor section and at least one isolator section are formed, comprises bonding the plates at mutually facing bonding faces, wherein a metal layer is arranged therebetween, and processing the metal layer by local heating using laser radiation such that the metal layer is converted into the at least one isolator section in a part region, and the at least one conductor section is formed adjacent thereto. To form the at least one isolator section, the light path of the laser radiation and the component are moved relative to each other to convert the metal layer into the at least one isolator section over a line or area. Bonding faces of metallic bond layers are polished. The plates are bonded by atomic diffusion bonding.Type: GrantFiled: February 8, 2021Date of Patent: August 2, 2022Assignee: ASML NETHERLANDS B.V.Inventors: Jan Ingwersen, David Kieven
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Patent number: 11403453Abstract: A method including obtaining verified values of a characteristic of a plurality of patterns on a substrate produced by a device manufacturing process; obtaining computed values of the characteristic using a non-probabilistic model; obtaining values of a residue of the non-probabilistic model based on the verified values and the computed values; and obtaining an attribute of a distribution of the residue based on the values of the residue. Also disclosed herein are methods of computing a probability of defects on a substrate produced by the device manufacturing process, and of obtaining an attribute of a distribution of the residue of a non-probabilistic model.Type: GrantFiled: June 20, 2018Date of Patent: August 2, 2022Assignee: ASML Netherlands B.V.Inventors: Lin Lee Cheong, Bruno La Fontaine, Marc Jurian Kea, Yasri Yudhistira, Maxime Philippe Frederic Genin
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Publication number: 20220237759Abstract: Systems and methods for optimal electron beam metrology guidance are disclosed. According to certain embodiments, the method may include receiving an acquired image of a sample, determining a set of image parameters based on an analysis of the acquired image, determining a set of model parameters based on the set of image parameters, generating a set of simulated images based on the set of model parameters. The method may further comprise performing measurement of critical dimensions on the set of simulated images and comparing critical dimension measurements with the set of model parameters to provide a set of guidance parameters based on comparison of information from the set of simulated images and the set of model parameters. The method may further comprise receiving auxiliary information associated with target parameters including critical dimension uniformity.Type: ApplicationFiled: January 3, 2022Publication date: July 28, 2022Applicant: ASML Netherlands B.V.Inventors: Lingling PU, Wei FANG, Nan ZHAO, Wentian ZHOU, Teng WANG, Ming XU
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Publication number: 20220236479Abstract: A method for manufacturing a capillary usable as part of a hollow-core photonic crystal fiber. The method includes obtaining a capillary having capillary wall including a first wall thickness; and chemically etching the capillary wall to reduce the wall thickness of the capillary wall. During performance of the etching, a control parameter is locally varied along the length of the capillary, the control parameter relating to reactivity of an etchant used in the etching, so as to control the etched wall thickness of the capillary wall along the capillary length. Also disclosed is a capillary manufactured by such a method and various devices including such a capillary.Type: ApplicationFiled: April 13, 2022Publication date: July 28, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Hendrik Sabert, Paulus Antonius Andreas Teunissen
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Publication number: 20220236651Abstract: Disclosed is a thermo-mechanical actuator (100) comprising a piezo¬electric module (110), the piezo-electric module comprising at least one piezo-electric element (120), wherein the thermo-mechanical actuator is configured to: receive a thermal actuation signal (132) for controlling a thermal behaviour of the piezo-electric module, or provide a thermal sensing signal (132) representative of a thermal state of the piezo-electric module, and, wherein the thermo-mechanical actuator is configured to: receive a mechanical actuation (134) signal for controlling a mechanical behaviour of the piezo-electric module, or provide a mechanical sensing signal (134) representative of a mechanical state of the piezo-electric module.Type: ApplicationFiled: June 30, 2020Publication date: July 28, 2022Applicant: ASML Netherlands B.V.Inventors: Bas JANSEN, Koen Martin Willem Jan BOS, Johannes Petrus Martinus Bernardus VERMEULEN
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Publication number: 20220236647Abstract: A method of controlling a semiconductor manufacturing process, the method including: obtaining first metrology data based on measurements performed after a first process step; obtaining second metrology data based on measurements performed after the first process step and at least one additional process step; estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data; and determining a Key Performance Indicator (KPI) or a correction for the first process step using the first metrology data and the estimated contribution.Type: ApplicationFiled: July 16, 2020Publication date: July 28, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Marc HAUPTMANN, Cornelis Johannes Henricus LAMBREGTS, Amir Bin ISMAIL, Rizvi RAHMAN, Allwyn BOUSTHEEN, Raheleh PISHKARI, Everhardus Cornelis MOS, Ekaterina Mikhailovna VIATKINA, Roy WERKMAN, Ralph BRINKHOF
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Publication number: 20220236645Abstract: A method for reducing M3D effects on imaging is described. The method includes identifying points within a source plane of the photolithography system that are associated with pattern shifts resulting from diffraction of light off a photomask under an angle of incidence between an imaging beam of radiation and the mask normal, determining pattern shifts associated with the identified source plane points, and modifying the source to reduce the determined pattern shifts.Type: ApplicationFiled: April 7, 2020Publication date: July 28, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Joern-Holger FRANKE, Eric Henri Jan HENDRICKX, Guido Constant Simon SCHIFFELERS
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Patent number: 11398368Abstract: A secondary projection imaging system in a multi-beam apparatus is proposed, which makes the secondary electron detection with high collection efficiency and low cross-talk. The system employs one zoom lens, one projection lens and one anti-scanning deflection unit. The zoom lens and the projection lens respectively perform the zoom function and the anti-rotating function to remain the total imaging magnification and the total image rotation with respect to the landing energies and/or the currents of the plural primary beamlets. The anti-scanning deflection unit performs the anti-scanning function to eliminate the dynamic image displacement due to the deflection scanning of the plural primary beamlets.Type: GrantFiled: October 19, 2020Date of Patent: July 26, 2022Assignee: ASML Netherlands B.VInventors: Weiming Ren, Xuedong Liu, Xuerang Hu, Zhongwei Chen
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Patent number: 11398398Abstract: Holding apparatus 100 for electrostatic holding of component 1, in particular a silicon wafer, includes plate-type base body 10 with plurality of projecting burls 11, the front surfaces 12 of which span a burl support plane for component 1, and electrode device 20 arranged in layered form in spacings between burls 11 and has plastic insulating layer 21 connected with base body 10, electrode layer 22 and dielectric layer 23, whereby electrode layer 22 is arranged between insulating layer 21 and dielectric layer 23, whereby a predetermined gap spacing A is set between the burl support plane and a top side of dielectric layer 23, and dielectric layer 23 includes an inorganic dielectric and is embedded at least in part into insulating layer 21. Methods for producing holding apparatus 100 for electrostatic holding of component 1, in particular a silicon wafer, are also described.Type: GrantFiled: July 6, 2019Date of Patent: July 26, 2022Assignee: ASML NETHERLANDS B.V.Inventors: Simon Halm, Lars Ziegenhagen
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Publication number: 20220229373Abstract: A method of determining a correction for a process parameter related to a lithographic process, wherein the lithographic process includes a plurality of runs during each one of which a pattern is applied to one or more substrates. The method of determining includes obtaining pre-exposure metrology data describing a property of a substrate; obtaining post-exposure metrology data comprising one or more measurements of the process parameter having been performed on one or more previously exposed substrates; assigning, based on the pre-exposure metrology data, a group membership status from one or more groups to the substrate; and determining the correction for the process parameter based on the group membership status and the post-exposure metrology data.Type: ApplicationFiled: April 7, 2022Publication date: July 21, 2022Applicant: ASML NETHERLANDS B.V.Inventors: Weitian KOU, Alexander YPMA, Marc HAUPTMANN, Michiel KUPERS, Lydia Marianna VERGAIJ-HUIZER, Erik Johannes Maria WALLERBOS, Erik Henri Adriaan DELVIGNE, Willem Seine Christian ROELOFS, Hakki Ergün CEKLI, Stefan Cornelis Theodorus VAN DER SANDEN, Cédric Désiré GROUWSTRA, David Frans Simon DECKERS, Manuel GIOLLO, Iryna DOVBUSH
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Publication number: 20220229375Abstract: A method for determining stochastic edge placement error associated with a pattern. The method includes acquiring, via a metrology tool, a plurality of images of the pattern at a defined location on the substrate without performing a substrate alignment therebetween; and generating at least two data: (i) first data associated with the pattern using a first set of images of the plurality of images, and (ii) second data associated with the pattern using a second set of images of the plurality of images. The first set of images and the second set of images include at least one different image. The method further includes determining (e.g., via a decomposition algorithm), using the first data and the second data associated with the pattern at the defined location, the stochastic edge placement error associated with the pattern.Type: ApplicationFiled: April 28, 2020Publication date: July 21, 2022Applicant: ASML NETHERLANDS B.V.Inventor: Jiyou FU
