Abstract: A system and method of removing target material debris deposits simultaneously with generating EUV light includes generating hydrogen radicals in situ in the EUV vessel, proximate to the target material debris deposits and volatilizing the target material debris deposits and purging the volatilized target material debris deposits from the EUV vessel without the need of an oxygen containing species in the EUV vessel.
Type:
Grant
Filed:
October 7, 2019
Date of Patent:
May 18, 2021
Assignee:
ASML Nettherlands B.V.
Inventors:
Jonghoon Baek, Mathew Cheeran Abraham, David Robert Evans, Jack Michael Gazza