Abstract: An imaging array device and staring array imaging system are described for generating signals in response to an image from a distant scene. The device comprises a plurality of discrete arrays (11) of photo-sensing elements (10), for example cadmium mercury telluride infrared detector elements. The discrete arrays (11) are arranged side-by-side to provide a large composite array. A corresponding plurality of lenses (110), preferably formed in a common body, is arranged side-by-side to provide a substantially continuous optical transmission plane which is located in front of the arrangement of discrete arrays (11) and through which the image from the scene is transmitted to the composite array of the elements (10). In the composite virtual image (FIG.
Type:
Grant
Filed:
December 18, 1986
Date of Patent:
April 28, 1992
Assignee:
Philips Electronic and Associated Industries Limited
Abstract: A thermal-radiation imaging device comprises at least one semconductor body portion (10,20,30,40), e.g. of n-type cadmium mercury telluride, on which biasing-electrode means (1 to 4 and 4b to 44b), e.g. of gold, are spaced for causing a bias current predominantly of majority charge-carriers to flow along each strip (10,20,30,40). The bias current supports an ambipolar drift of radiation-generated charge carriers in the opposite direction. One or more read-out means (e.g. 11,21,51,41) is present in the drift path of each body portion (e.g. 10). The body portion (10,20,30,40) is present on a substrate 100 having a conductor pattern (61 to 64, 71 to 74, 81 to 84, 91 to 94) which provides electrical connections to each of the read-out means. Each read-out means which may be a diode junction or an electrode pair is formed at holes (reference a and b for an electrode pair) which extend through the thickness of the body portion (10,20,30,40) to the conductor pattern of the substrate (100).
Type:
Grant
Filed:
July 1, 1983
Date of Patent:
August 22, 1989
Assignee:
Philips Electronics and Associated Industries Limited
Abstract: Thermal-radiation imaging devices, elements and systems are described. The device comprises on a substrate (2) e.g. of sapphire semiconductor bodies or body portions in the form of parallel elongate strips (1), e.g. of cadmium mercury telluride. Biasing-electrode means (6 and 7) e.g. of gold are spaced on the strips (1) for causing a bias current predominantly of majority charge carriers to flow along each strip (1). The bias current supports an ambipolar drift of radiation-generated free minority carriers in the opposite direction. At the area of read-out means (8) in the drift path each strip (1) branches into two parts separated by a slot (13) parallel to the strip (1). One part (11 in FIG. 2) provides the continuation of the drift path, while a read-out connection comprises the other part (12 in FIG. 2) and is separated by the slot (13) from the adjacent biasing-electrode means (6 or 7).