Abstract: The invention relates to a method and apparatus for detecting defects in a semiconductor or silicon structure at room temperature, and in an efficient time, using photoluminescence. The invention employs the use of a high intensity beam of light preferably having a spot size between 0.1 mm–0.5 microns and a peak or average power density of 104–109 w/cm2 with a view to generating a high concentration of charge carriers, which charge characters detect defects in a semiconductor by interacting with same. These defects are visible by producing a photoluminescence image of the semiconductor. Several wavelengths may be selected to identify defects at a selective depth as well as confocal optics may be used.
Type:
Grant
Filed:
September 5, 1997
Date of Patent:
September 26, 2006
Assignee:
ASTI Operating Company, Inc.
Inventors:
Victor Higgs, Ian Christopher Mayes, Freddie Yun Heng Chin, Michael Sweeney