Abstract: There are provided monitors which sense a magnitude of power (and/or energy) being consumed by a facility and which sense a magnitude of power (and/or energy) being produced by at least one energy-producing system. There are provided facilities comprising at least one main panel bus, at least one external power line, at least one energy-producing system, at least one critical load sub-panel bus and at least one monitor which senses a magnitude of power (and/or energy) being consumed by the facility and a magnitude of power (and/or energy) being produced by the at least one energy-producing system. There are provided methods of monitoring power (and/or energy) consumed and power (and/or energy) produced in a facility, and devices which display magnitude of power (and/or energy) being consumed and magnitude of power (and/or energy) being produced in a battery.

Abstract: A method and apparatus for applying contacts to a semiconductor substrate, comprising one or more applicator rolls. Each applicator roll comprises a printing surface which has at least one raised pattern surface. Each raised first pattern surface is positioned such that upon rotation of the first rotatable applicator roll, it passes through a printing space. As a result, a surface of a semiconductor substrate passing through the printing space while the raised pattern surface(s) is covered with a conductive ink and the applicator roll is being rotated comes into contact with the conductive ink on at least part of the raised pattern surface, and does not come into contact with conductive ink on substantially any of the printing surface other than the raised pattern surface. Accordingly, a conductive ink pattern is deposited on the semiconductor substrate surface. In a preferred aspect, the conductive ink is a hot melt ink.

Abstract: There are provided photovoltaic-photoelectrochemical devices each comprising a diode and a plurality of separate photocathode elements. Preferably, the devices are positioned in a container in which they are at least partially immersed in electrolyte. Preferably, the devices are positioned in a container which has at least one photocathode reaction product vent and at least one anode reaction product vent. Preferably, the devices are positioned in a container which has an internal partial wall extending from a top portion of the container toward, but not reaching, a bottom portion of the container, the internal partial wall being positioned between the photocathode elements and an anode element which is electrically connected to the p-region of the diode. There are also provided photovoltaic-photoelectrochemical methods using such devices, and methods of making such devices.

Abstract: There are provided photovoltaic tiles (each containing at least one photovoltaic cell) which can be readily integrated into a roof structure constructed of standard roofing materials. The photovoltaic tiles have frames which hold photovoltaic elements, the frames having end portions which are engageable with opposite end portions of similarly-shaped photovoltaic tiles and/or with end portions of standard roofing tiles, and/or which are shaped similar to shapes of end portions of standard roofing tiles. There are also provided roofing systems including standard roofing tiles and such photovoltaic tiles. There are also provided methods of constructing a roof using such a roofing system.

Abstract: A method of purifying silicon, comprising feeding a sparging gas into a liquid melt [10] containing molten silicon and at least one impurity, in which the sparging gas is used to react with or move one or more impurity contained within the silicon. The products of such reaction or movement may be removed, e.g., by liquid-gas extraction, by liquid-liquid extraction or by liquid-solid extraction.

Abstract: The invention relates to a device structure and crystal growth process for making the same, whereby single-crystal semiconductor layers are formed over metal or composite layers. The metal layers function as buried reflectors to enhance the performance of LEDs, solar cells, and photodiodes. The structure may also have application to laser diodes. The structures are made by a modification of a well-established metallic solution growth process. The lateral overgrowth process can be enhanced by imposing an electric current at the growth interface (termed liquid-phase electro-epitaxy). However, the use of an electric current is not crucial. The epitaxial lateral overgrowth technique was also applied to silicon growth on metal-masked silicon substrates.

Abstract: A polycrystalline film of silicon including silicon grains having an aspect ratio, d/t, of more than 1:1, wherein “d” is the grain diameter and “t” is the grain thickness. The polycrystalline film of silicon can be used to form an electronic device, such as a monolithically integrated solar cell having ohmic contacts formed on opposed surfaces or on the same surface of the film. A plurality of solar cells can be monolithically integrated to provide a solar cell module that includes an electrically insulating substrate and at least two solar cells disposed on the substrate in physical isolation from one another. Methods for manufacturing the film, solar cell and solar cell module are also disclosed. The simplified structure and method allow for substantial cost reduction on a mass-production scale, at least in part due to the high aspect ratio silicon grains in the film.

Abstract: There is provided a solar collector comprising at least one solar module; at least one solar module frame which supports the solar module; and at least one solar module bracket comprising a profile channel engagement hook, the profile channel engagement hook comprising a neck portion and a foot portion, the foot portion having a foot portion cross-sectional area in a first plane which is larger than a cross-sectional area of the neck portion in a second plane parallel to the first plane. There is also provided a profile channel attached to or integral with a support structure, the profile channel having at least one opening, the profile channel engagement hook engaging the opening such that the neck portion extends through the opening. There are also provided methods of making such solar collectors and methods of mounting such solar collectors on support structures.

Abstract: A polycrystalline film of silicon including silicon grains having an aspect ratio, d/t, of more than 1:1, wherein “d” is the grain diameter and “t” is the grain thickness. The polycrystalline film of silicon can be used to form an electronic device, such as a monolithically integrated solar cell having ohmic contacts formed on opposed surfaces or on the same surface of the film. A plurality of solar cells can be monolithically integrated to provide a solar cell module that includes an electrically insulating substrate and at least two solar cells disposed on the substrate in physical isolation from one another. Methods for manufacturing the film, solar cell and solar cell module are also disclosed. The simplified structure and method allow for substantial cost reduction on a mass-production scale, at least in part due to the high aspect ratio silicon grains in the film.

Abstract: A method of purifying silicon, comprising feeding a sparging gas into a liquid melt [10] containing molten silicon and at least one impurity, in which the sparging gas is used to react with or move one or more impurity contained within the silicon. The products of such reaction or movement may be removed, e.g., by liquid-gas extraction, by liquid-liquid extraction or by liquid-solid extraction.

Abstract: The invention relates to a silicon sheet having columnar grains extending axially through the sheet from one free surface of the sheet to the other free surface. The sheet has an electrical resistivity in the range of 0.1 to 10 ohm-cm.

Abstract: The invention relates to improved techniques for manufacturing columnar-grained polycrystalline sheets which have particular utility as substrates or wafers for solar cells. The sheet is made from silicon on a setter material which supports the silicon material. The setter material and silicon are subjected to a thermal profile all of which promote columnar growth. The thermal profile sequentially creates a melt region where a thin-film capping layer grows at the top of the silicon, a nucleation region where preferential nucleation occurs at the capping-layer/molten-silicon interface, and then a growth region where both liquid and a growing polycrystalline sheet layer coexist. An annealing region is created where the temperature of the grown polycrystalline silicon sheet layer is controllably reduced to effect stress relief.

Abstract: The invention relates to a device structure and crystal growth process for making the same, whereby single-crystal semiconductor layers are formed over metal or composite layers. The metal layers function as buried reflectors to enhance the performance of LEDs, solar cells, and photodiodes. The structure may also have application to laser diodes. The structures are made by a modification of a well-established metallic solution growth process. The lateral overgrowth process can be enhanced by imposing an electric current at the growth interface (termed liquid-phase electro-epitaxy). However, the use of an electric current is not crucial. The epitaxial lateral overgrowth technique was also applied to silicon growth on metal-masked silicon substrates.

Abstract: The disclosure describes a high-temperature optical transducer capable of acquiring input variables for closed-loop control of combustion systems. The key components of the innovation are a high-temperature, embedded photodiode, the use of low-cost, integral absorption filters; and the use of an embedded high-temperature preamplifier circuit. These components are combined in an optical-to-electrical signal transducer deployed in the high-temperature combustion environment, thus avoiding the high costs of optical signal transmission. The optical signals to the transducer are employed to recognize events in real-time such as the ignition spark, the start of combustion, end of combustion, misfires, and knocking. The outputs from the transducer may be used in a statistical fashion to control engine roughness and cyclic stability. By resolving specific colors in the flame, the optical sensors may also be used to determine the temperature and the emission production in the combustion chamber.

Abstract: The invention relates to techniques for manufacturing columnar-grained polycrystalline sheets which have particular utility as substrates or wafers for solar cells. The sheet is made by applying granular silicon to a setter material which supports the granular material. The setter material and granular silicon are subjected to a thermal profile all of which promote columnar growth by melting the silicon from the top downwardly. The thermal profile sequentially creates a melt region at the top of the granular silicon and then a growth region where both liquid and a growing polycrystalline sheet layer coexist. An annealing region is created where the temperature of the grown polycrystalline silicon sheet layer is controllably reduced to effect stress relief.

Abstract: A method for growing a compound semiconductor, such as GaAs or InP, on a non-lattice matched substrate, such as Si, utilizes close-spaced vapor transport to deposit nucleation enhancing interlayer and liquid phase epitaxy to form the compound semiconductor. When used in conjunction with a growth mask, the method is also adapted to selective area epitaxy.

Abstract: The invention relates to techniques for manufacturing columnar-grained polycrystalline sheets which have particular utility as substrates or wafers for solar cells. The sheet is made by applying granular silicon to a setter material which supports the granular material. The setter material and granular silicon are subjected to a thermal profile all of which promote columnar growth by melting the silicon from the top downwardly. The thermal profile sequentially creates a melt region at the top of the granular silicon and then a growth region where both liquid and a growing polycrystalline sheet layer coexist. An annealing region is created where the temperature of the grown polycrystalline silicon sheet layer is controllably reduced to effect stress relief.

Abstract: A plurality of thin polycrystalline silicon solar cells formed on a ceramic substrate and which are electrically series connected to form a monolithically interconnected submodule. Adjacent solar cells are electrically separated by a vertical trench and electrically connected by interconnects located below the light receiving surface of each solar cell. The submodules are provided with external electrical contacts for electrically connecting into a photovoltaic module assembly.

Abstract: A thin-film photovoltaic solar cell features a thin polycrystalline silicon active semiconductor formed over a conductive ceramic substrate. Between the substrate and the adjacent active semiconductor layer is a barrier layer which provides for reflection of light, minimizes back surface recombination and prevents contamination of the active semiconductor.

Abstract: The invention relates to techniques for manufacturing columnar-grained polycrystalline sheets which have particular utility as substrates or wafers for solar cells. The sheet is made by applying granular silicon to a setter material which supports the granular material. The setter material and granular silicon are subjected to a thermal profile all of which promote columnar growth by melting the silicon from the top downwardly. The thermal profile sequentially creates a melt region at the top of the granular silicon and then a growth region where both liquid and a growing polycrystalline sheet layer coexist. An annealing region is created where the temperature of the grown polycrystalline silicon sheet layer is controllably reduced to effect stress relief.