Patents Assigned to Astropower
  • Patent number: 5336335
    Abstract: The invention relates to techniques for manufacturing columnar-grained polycrystalline sheets which have particular utility as substrates or wafers for solar cells. The sheet is made by applying granular silicon to a setter material which supports the granular material. The setter material and granular silicon are subjected to a thermal profile all of which promote columnar growth by melting the silicon from the top downwardly. The thermal profile sequentially creates a melt region at the top of the granular silicon and then a growth region where both liquid and a growing polycrystalline sheet layer coexist. An annealing region is created where the temperature of the grown polycrystalline silicon sheet layer is controllably reduced to effect stress relief.
    Type: Grant
    Filed: October 9, 1992
    Date of Patent: August 9, 1994
    Assignee: AstroPower, Inc.
    Inventors: Robert B. Hall, Allen M. Barnett, Jacob E. Brown, Joseph C. Checchi, David H. Ford, Christopher L. Kendall, William P. Mulligan, James A. Rand, Todd R. Ruffins
  • Patent number: 5266125
    Abstract: A plurality of thin polycrystalline silicon solar cells formed on a ceramic substrate and which are electrically series connected to form a monolithically interconnected submodule. Adjacent solar cells are electrically separated by a vertical trench and electrically connected by interconnects located below the light receiving surface of each solar cell. The submodules are provided with external electrical contacts for electrically connecting into a photovoltaic module assembly.
    Type: Grant
    Filed: May 12, 1992
    Date of Patent: November 30, 1993
    Assignee: AstroPower, Inc.
    Inventors: James A. Rand, Allen M. Barnett, Robert B. Hall
  • Patent number: 5057163
    Abstract: A thin-film photovoltaic solar cell features a thin polycrystalline silicon active semiconductor formed over a conductive ceramic substrate. Between the substrate and the adjacent active semiconductor layer is a barrier layer which provides for reflection of light, minimizes back surface recombination and prevents contamination of the active semiconductor.
    Type: Grant
    Filed: May 4, 1988
    Date of Patent: October 15, 1991
    Assignee: AstroPower, Inc.
    Inventors: Allen M. Barnett, Robert B. Hall, James A. Rand, David H. Ford