Patents Assigned to Athenaeum, LLC
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Patent number: 9023729Abstract: A method of growth and transfer of epitaxial structures from semiconductor crystalline substrate(s) to an assembly substrate. Using this method, the assembly substrate encloses one or more semiconductor materials and defines a wafer size that is equal to or larger than the semiconductor crystalline substrate for further wafer processing. The process also provides a unique platform for heterogeneous integration of diverse material systems and device technologies onto one single substrate.Type: GrantFiled: December 21, 2012Date of Patent: May 5, 2015Assignee: Athenaeum, LLCInventor: Eric Ting-Shan Pan
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Patent number: 8822309Abstract: Methods and structures for heterogeneous integration of diverse material systems and device technologies onto a single substrate incorporate layer transfer techniques into an epitaxy level packaging process. A planar substrate surface of multiple epitaxial areas of different materials can be heterogeneously integrated with a substrate material. Complex assembly and lattice engineering is significantly reduced. Microsystems of different circuits made from different materials can be built from a single wafer Fab line employing the claimed processes.Type: GrantFiled: December 21, 2012Date of Patent: September 2, 2014Assignee: Athenaeum, LLCInventor: Eric Ting-Shan Pan
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Patent number: 8673752Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.Type: GrantFiled: June 4, 2012Date of Patent: March 18, 2014Assignee: Athenaeum, LLCInventor: Eric Ting-Shan Pan
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Patent number: 8541294Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.Type: GrantFiled: June 4, 2012Date of Patent: September 24, 2013Assignee: Athenaeum LLCInventor: Eric Ting-Shan Pan
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Patent number: 8530342Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.Type: GrantFiled: June 4, 2012Date of Patent: September 10, 2013Assignee: Athenaeum, LLCInventor: Eric Ting-Shan Pan
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Patent number: 8507371Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.Type: GrantFiled: June 4, 2012Date of Patent: August 13, 2013Assignee: Athenaeum LLCInventor: Eric Ting-Shan Pan
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Patent number: 8507370Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.Type: GrantFiled: June 4, 2012Date of Patent: August 13, 2013Assignee: Athenaeum LLCInventor: Eric Ting-Shan Pan
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Patent number: 8193078Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.Type: GrantFiled: October 28, 2009Date of Patent: June 5, 2012Assignee: Athenaeum, LLCInventor: Eric Ting-Shan Pan
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Patent number: 7905197Abstract: An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.Type: GrantFiled: October 28, 2009Date of Patent: March 15, 2011Assignee: Athenaeum, LLCInventor: Eric Ting-Shan Pan