Abstract: An improved wafer cleaning process wherein a novel oxidant solution comprising ultrapure sulfuric acid, peroxydisulfuric acid, and ultrapure water used in a semiconductor wafer cleaning process is continuously withdrawn after use. The withdrawn oxidant is reprocessed continuously by contacting with alumina to remove fluoride ions. Water is continuously separated or stripped from the oxidant solution by heating the solution and bubbling an inert gas therethrough. The separated oxidant is continuously distilled and condensed to form a purified stream of sulfuric acid. The major portion of this stream is continuously returned to the wafer cleaning process. The remaining minor portion is continuously cooled, subjected to analysis for purity, and diluted with ultrapure water prior to electrochemical treatment in the anode compartment of an electrochemical cell. This converts at least a portion of the dilute sulfuric acid to peroxydisulfuric acid.