Patents Assigned to Atlis Semiconductor
  • Memory structure and method of manufacture
    Patent number: 7423282
    Abstract: A solid state electrolyte memory structure includes a solid state electrolyte layer, a metal layer on the solid state electrolyte layer, and an etch stop layer on the metal layer.
    Type: Grant
    Filed: July 6, 2006
    Date of Patent: September 9, 2008
    Assignees: Infineon Technologies AG, Atlis Semiconductor
    Inventors: Chanro Park, Wolfgang Raberg, Ulrich Klostermann