Abstract: Compositions and methods for selectively removing unreacted metal material (e.g., unreacted nickel) relative to metal germanide (e.g., NiGe), metal-III-V materials, and germanium from microelectronic devices having same thereon. The compositions are substantially compatible with other materials present on the microelectronic device such as low-k dielectrics and silicon nitride.
Type:
Application
Filed:
December 16, 2014
Publication date:
October 27, 2016
Applicants:
ENTEGRIS, INC., ATMI TAIWAN CO., LTD.
Inventors:
Steven BILODEAU, Jeffrey A. BARNES, Emanuel COOPER, Hsing-Chen WU, Sheng-Hung TU, Thomas PARSON, Min-chieh YANG
Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one corrosion inhibitor, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers.
Type:
Application
Filed:
May 17, 2013
Publication date:
April 30, 2015
Applicants:
ATMI Taiwan Co., Ltd., Advanced Technology Materials, Inc.
Inventors:
Shrane Ning Jenq, Karl E. Boggs, Jun Liu, Nicole Thomas