Abstract: Disclosed is a method of reading data from a memory including a NAND cell array for performing communications via a serial peripheral interface (SPI) bus. The method includes sequentially receiving inputs of a block address, a word-line address, and a bit-line address of the NAND cell array; and starting to output data written in the NAND cell array immediately after the bit-line address is completely input. In this case, the sequential receiving of the inputs is performed via one input terminal.

Abstract: Provided are a non-volatile memory device, an electronic control system, and a method of operating the non-volatile memory device. A non-volatile memory device according to an embodiment of the present invention includes a first NAND cell array including a first group of pages, and a second NAND cell array including a second group of pages. A plurality of X-decoders are at least one-to-one connected to the first and second NAND cell arrays. A control logic controls the plurality of X-decoders to simultaneously sense data of a first page corresponding to a start address from among the first group of pages, and data of a second page subsequent to the first page from among the second group of pages.

Abstract: A method of writing data in a memory comprising a NAND cell array is disclosed, wherein a data output device completes the writing process only by transmitting the data and a start address for writing the data to the memory.