Abstract: A closure and seal construction for a high-pressure oxidation furnace and the like having a quartz chamber and an integral quartz wall formed with an opening for receiving into the chamber material to be processed, the wall providing an annular surface surrounding the opening and being formed with an annular recess in the surface surrounding the opening; a combined cooling and sealing tube mounted in the recess and protruding slightly therefrom; a closure mounted for engagement with the tube and wall surface; and the tube having an elasticity responsive to a closing pressure to resiliently retract and provide simultaneous sealing engagement of the closure with the wall surface and tube.

Abstract: A high-pressure, high-temperature gaseous chemical apparatus particularly designed for oxidation of silicon wafers and providing for pressure equalization across the wall of the vessel providing the reaction chamber, for a water boiling enclosure within the reaction chamber and the injection of liquid water under pressure into the enclosure and for the continuous flow through of water vapor at high temperature and high pressure in the reaction chamber while maintaining the aforementioned pressure balance.

Abstract: Apparatus and method for growing oxide on silicon wafers or silicon-coated wafers or other semiconductors for the semiconductor industry wherein the oxide growth is produced under high pressure and high temperature conditions within a reaction chamber by oxidizing gases which are maintained in a continuous flow condition into and through the chamber.

Abstract: Apparatus and method for growing oxide on silicon wafers or silicon-coated wafers or other semiconductors for the semiconductor industry wherein the oxide growth is produced under high pressure and high temperature conditions within a reaction chamber by oxidizing gases which are maintained in a continuous flow condition into and through the chamber.