Abstract: An optical detection system includes a diffractive optical element (DOE) configured to receive incident light and a detector. The DOE causes incident light at a first wavelength to generate a first diffraction pattern and incident light at a second wavelength different than the first wavelength to generate a second diffraction pattern distinguishable from the first diffraction pattern, wherein the detector detects light diffracted by the DOE.

Abstract: A moving magnet motor system including a cylinder having a cylindrical axis and a rider disposed within the cylinder, wherein the rider moves longitudinally along the cylindrical axis within the cylinder. The moving magnet motor system further including a coil configured to generate an electromagnetic field, a magnet ring support structure affixed to the rider and a magnetic ring affixed to the magnet ring support structure and comprising a plurality of magnets configured to interact with the magnetic field generated by the coil to impart linear force to the rider. The moving magnet motor system further includes one or more ferromagnetic rods extending parallel to the cylindrical axis wherein the ferromagnetic rod(s) are configured to minimize or offset a bearing side load.

Abstract: A back-illuminated photo detector array (PDA) includes a front side and a back side. The back side receives optical energy incident on the back side at an incident direction. The front side includes a detection layer that includes detection structures and a plurality of photon-trapping nanostructures (PTN). The PTN cause optical energy incident on the back side to disperse in a direction perpendicular to the incident direction, and thereby improve an absorption efficiency of the back-illuminated PDA.

Abstract: A PIN photodetector includes an n-type semiconductor layer, an n-type semiconductor cap layer, a first plurality of p-type regions located within the n-type semiconductor cap layer and separated from one another by a distance d1, and an absorber layer located between the n-type semiconductor layer and the n-type semiconductor cap layer including the first plurality of p-type regions. The plurality of p-type regions are electrically connected to one another to provide an electrical response to light incident to the PIN photodetector.

Abstract: A hybridized image sensor includes a first die and a second die. The first die includes a first surface, a first plurality of conductive bumps fabricated on the first surface, and a first alignment feature fabricated on the first surface. The second die includes a second surface, a second plurality of conductive bumps fabricated on the second surface, and second alignment features fabricated on the second surface, wherein the first alignment features interact with the second alignment features to align the first plurality of conductive bumps with the second plurality of conductive bumps.

Abstract: A PIN photodetector includes an n-type semiconductor layer, an n-type semiconductor cap layer, a first plurality of p-type regions located within the n-type semiconductor cap layer and separated from one another by a distance d1, and an absorber layer located between the n-type semiconductor layer and the n-type semiconductor cap layer including the first plurality of p-type regions. The plurality of p-type regions are electrically connected to one another to provide an electrical response to light incident to the PIN photodetector.

Abstract: A modulated light receiver includes a photo-sensitive element, an electromagnetic interference (EMI) detection circuit, and a decision-making controller. The photo-sensitive element is configured to generate an electrical signal in response to modulated light. The electromagnetic interference (EMI) detection circuit is configured to generate an electrical signal in response to EMI. The decision-making controller is electrically coupled to the photo-sensitive element and the EMI detection circuit, wherein the decision-making controller generates an output based on the inputs received from the photo-sensitive element and the EMI detection circuit.