Abstract: Provided is a lithium battery anode material including a graphite material and a composite material. The composite material and the graphite material are crossly mixed together to form a plurality of spherical structures. The composite material includes a silicon material, an agglomerate, and a plurality of protrusions. A plurality of crystals are grown on a surface of the silicon material. The crystals include silicon carbide. The agglomerate includes metal silicide. The protrusions are distributed on a surface of the agglomerate. The protrusions include silicon and metal.

Abstract: A method for manufacturing silicon flakes includes steps as follows. A silicon material is contacted with a machining tool which includes at least one abrasive particle fixedly disposed thereon. The silicon material is scraped along a displacement path with respect to the machining tool to generate the silicon flakes having various particle sizes.

Abstract: Provided is a lithium battery anode material including a graphite material and a composite material. The composite material and the graphite material are crossly mixed together to form a plurality of spherical structures. The composite material includes a silicon material, an agglomerate, and a plurality of protrusions. A plurality of crystals are grown on a surface of the silicon material. The crystals include silicon carbide. The agglomerate includes metal silicide. The protrusions are distributed on a surface of the agglomerate. The protrusions include silicon and metal.

Abstract: A container for silicon ingot fabrication and a manufacturing method thereof are provided. The method includes the following steps. A base layer made of quartz is provided in a chamber. A powder solution layer is coated over an inner surface of the base layer. The powder solution layer includes silicon nitride or carbon. The base layer having the powder solution layer coated thereon is heated to a temperature of 1000° C. to 1700° C. while a reaction gas is supplied into the chamber for 2 hours to 8 hours to form a barrier layer over the inner surface of the base layer. The barrier layer includes silicon oxynitride represented by SixNyOz, 1?x?2, 1?y?2, and 0.1?z?1. Moreover, a method for manufacturing a crystalline silicon ingot is also provided.

Abstract: A method for manufacturing a negative electrode material of a lithium battery is provided. The method includes: covering a metal material and a carbon material on a surface of a silicon material; performing a thermal process for reacting the metal material with the carbon material on the surface of the silicon material thereby forming a silicon composite material and at least one projection on the surface of the silicon material, wherein a free end of the projection is extended to form a head, the silicon composite material is used as the negative electrode material of the lithium battery, the silicon composite material comprises a composite layer forming on the surface of the silicon material, and the composite layer comprises a metal silicide, a metal oxide, a silicon carbide and a silicon oxide.

Abstract: A crucible structure is adapted for manufacturing a silicon crystal structure. The crucible structure includes a crucible body and a release coating layer. A material of the crucible body includes silicon dioxide. The release coating layer directly covers the crucible body, and a material of the release coating layer includes barium silicate. The barium silicate is a continuous film to contact the silicon crystal structure, and a thickness of the release coating layer is between 35 ?m and 350 ?m.

Abstract: A method for manufacturing a polycrystalline silicon ingot includes steps of: a) melting a silicon material in a container disposed in a thermal field to form a molten silicon; b) controlling the thermal field to provide heat to the molten silicon from above the container and to solidify a portion of the molten silicon contacting a base part and at least a portion of a wall part proximate to the base part of the container to form a solid silicon crystalline isolation layer; and c) controlling the thermal field to continuously provide heat to the rest of the molten silicon from above the container and to solidify the rest of the molten silicon gradually from a bottom to a top of the rest of the molten silicon to form a polycrystalline silicon ingot.

Abstract: A method for manufacturing a polycrystalline silicon ingot includes steps of: a) melting a silicon material in a container disposed in a thermal field to form a molten silicon; b) controlling the thermal field to provide heat to the molten silicon from above the container and to solidify a portion of the molten silicon contacting a base part and at least a portion of a wall part proximate to the base part of the container to form a solid silicon crystalline isolation layer; and c) controlling the thermal field to continuously provide heat to the rest of the molten silicon from above the container and to solidify the rest of the molten silicon gradually from a bottom to a top of the rest of the molten silicon to form a polycrystalline silicon ingot.

Abstract: A method for manufacturing silicon flakes includes steps as follows. A silicon material is contacted with a machining tool which includes at least one abrasive particle fixedly disposed thereon. The silicon material is scraped along a displacement path with respect to the machining tool to generate the silicon flakes having various particle sizes.

Abstract: A container for silicon ingot fabrication and a manufacturing method thereof are provided. The method includes the following steps. A base layer made of quartz is provided in a chamber. A powder solution layer is coated over an inner surface of the base layer. The powder solution layer includes silicon nitride or carbon. The base layer having the powder solution layer coated thereon is heated to a temperature of 1000° C. to 1700° C. while a reaction gas is supplied into the chamber for 2 hours to 8 hours to form a barrier layer over the inner surface of the base layer. The barrier layer includes silicon oxynitride represented by SixNyOz, 1?x?2, 1?y?2, and 0.1?z?1. Moreover, a method for manufacturing a crystalline silicon ingot is also provided.