Abstract: There is provided an overlay measurement device controlling a focus movement, which includes: a lighting part being configured to orient lighting toward an overlay measurement target; a collection part comprising an objective lens and a detector for obtaining one or more of images of each focus in the overlay measurement target; a lens focus actuator moving the objective lens to adjust a distance between the objective lens and a wafer; and a processor controlling an operation of the lens focus actuator. The processor obtains a focus graph respectively in relation to two layers from one or more of the images of each focus, and the processor identifies a reference focus in relation to the obtained focus graphs to move the objective lens.

Abstract: A non-transitory computer-readable storage medium that records a data structure for storing data controlling an operation of an overlay measurement device that measures an error between a first overlay mark and a second overlay mark formed on different layers of a wafer. The data include: information of a recipe that is input to allow the overlay measurement device to measure characteristics of a wafer through a manager program installed in a user terminal, and unique information of the overlay measurement device. The overlay measurement device includes: a light source, an aperture that changes a beam from the light source to be suitable for photographing the first overlay mark or the second overlay mark, a detector that acquires an image of the first overlay mark and an image of the second overlay mark, a transceiver, and a processor electrically connected to the transceiver.

Abstract: An overlay measurement device includes a light source configured to direct an illumination to an overlay measurement target, a lens assembly configured to condense the illumination at a measurement position at any one point on the overlay measurement target, a detector configured to obtain a plurality of target overlay images through a beam reflected from the measurement position, a controller configured to determine at least one of a first similarity coefficient and a second similarity coefficient for each of the plurality of target overlay images and determine a defective overlay image from among the plurality of target overlay images based on at least one of the first similarity coefficient and the second similarity coefficient for each of the plurality of target overlay images, and a memory configured to store a normal overlay image and defect data corresponding to the defective overlay image.

Abstract: A non-transitory computer-readable storage medium that records a data computer-readable storage medium that records a data structure for storing data controlling an operation of an overlay measurement device that measures an error between a first overlay mark and a second overlay mark formed on different layers of a wafer. The data include information of a recipe that is input to allow the overlay measurement device to measure characteristics of a wafer through a manager program installed in a user terminal, and unique information of the overlay measurement device.

Abstract: A non-transitory computer-readable storage medium that records a data structure for storing data controlling an operation of an overlay measurement device that measures an error between a first overlay mark and a second overlay mark formed on different layers of a wafer. The data include information of a recipe that is input to allow the overlay measurement device to measure characteristics of a wafer through a manager program installed in a user terminal, and unique information of the overlay measurement device.

Abstract: Disclosed is a system for optimizing a measurement time of an overlay. According to one embodiment, an overlay measurement apparatus is provided. The overlay measurement apparatus includes a light source configured to direct light to a plurality of overlay targets formed on a wafer; a lens unit including: an objective lens and a lens focus actuator; a detector configured to acquire a focus image; a stage on which the wafer is seated; and a controller configured to: control the lens unit, the detector, and the stage to measure a preset collection-purposed overlay target; collect a target coordinate of the collection-purposed overlay target; calculate a correction value based on the target coordinate; move the stage under application of the correction value; and control the lens unit, the detector, and the stage to measure at least one application-purposed overlay target.

Abstract: An overlay measurement device includes a light source configured to direct an illumination to an overlay measurement target in which a first overlay key in a first layer and a second overlay key in a second layer are positioned, the second layer being stacked on an upper portion or a lower portion of the first layer, a lens assembly including an objective lens configured to condense the illumination on a measurement position of at least one point in the overlay measurement target and a lens focus actuator configured to control a distance between the objective lens and the overlay measurement target, and a detector configured to acquire a focus image at the measurement position based on a beam reflected on the measurement position.

Abstract: An overlay measurement device includes: a light source configured to direct an illumination to an overlay measurement target in which a first overlay key formed in a first layer and a second overlay key formed in a second layer stacked on an upper portion of the first layer are positioned, a lens assembly having an objective lens and a lens focus actuator, a detector configured to obtain a focus image, and a controller configured to control the lens assembly to acquire depth-specific focus images of the overlay measurement target, extract a plurality of candidate focuses from the acquired depth-specific focus images, and select an optimal focus by applying predetermined parameter to the plurality of candidate focuses.

Abstract: An overlay mark forming a Moire pattern, an overlay measurement method using the overlay mark, an overlay measurement apparatus using the overlay mark, and a manufacturing method of a semiconductor device using the overlay mark are provided. The overlay mark for measuring an overlay based on an image is configured to determine a relative misalignment between at least two pattern layers. The overlay mark includes a first overlay mark including a pair of first grating patterns which has a first pitch along a first direction and which is rotationally symmetrical by 180 degrees, and includes a second overlay mark including a pair of second grating patterns and a pair of third grating patterns. The second grating patterns partially overlap the first grating patterns and are rotationally symmetrical by 180 degrees, and the third grating patterns partially overlap the first grating patterns and are rotationally symmetrical by 180 degrees.

Abstract: A method of quality control and testing for manufactured semiconductors by generating a model for spectroscopic ellipsometry constant analysis includes: calculating, by an operator, simulation data representing a spectroscopic ellipsometry constant of an analysis target through reasoning on attribute data representing an attribute of the analysis target using a simulation model; calculating, by an error calculator, an error representing a difference between actual measured data obtained by measuring the spectroscopic ellipsometry constant of the analysis target and the simulation data; and performing optimization in which an optimizer modifies a parameter of the simulation model according to the error.

Abstract: An overlay measurement device measures an error between a first overlay mark and a second overlay mark respectively formed on different layers formed on a wafer. The device is configured to detect a height of the first overlay mark based on a change in the signal of the first detector according to a change in the relative position of the objective lens with respect to the wafer in the optical axis direction and detect a height of the second overlay mark based on a change in the signal of the second detector according to a change in the relative position of the objective lens with respect to the wafer in the optical axis direction.

Abstract: An overlay measurement apparatus includes: a light source unit configured to direct an illumination to an overlay measurement target in which a first filling unit formed in a first layer and a second filling unit formed in a second layer; a lens unit having an objective lens and a lens focus actuator; a detection unit acquiring a focus image at the measurement position; and a control unit aligning the sample image measured by the detection unit and a prestored setting model image, acquiring CI information of the aligned and sample image and setting model image, measuring a plurality of images by controlling the lens unit with a focus determined according to the CI information, and calculating an overlay with a difference value by comparing center points of the plurality of images.

Abstract: There is provided a polarization analysis apparatus that adjusts an angle of incidence or a numerical aperture by using an aperture. The apparatus includes: a first aperture that transmits a lighting beam reflected from a sample on a substrate; a second aperture that transmits a lighting beam having passed through the first aperture; and a detector that detects a lighting beam having passed through the second aperture and selects an angle of incidence of the lighting beam and numerical apertures of the first aperture and the second aperture.

Abstract: Disclosed is an overlay measurement apparatus which may include: a light source unit configured to direct an illumination to an overlay measurement target formed in a wafer; a lens unit having an objective lens and a lens focus actuator; a detection unit acquiring a focus image at a measurement position; a stage on which the wafer is seated; and a control unit controlling the lens unit to acquire the overlay measurement target, processing a first sample image of the overlay measurement target detected by the detection unit and a second sample image rotated at 180 degrees based on the first sample image and detected, and calculating a difference between the processed images to calculate the difference as a correction image for correcting an image for which overlay is measured.

Abstract: There is provided an overlay measurement device controlling a focus movement, which includes: a lighting part being configured to orient lighting toward an overlay measurement target; a collection part comprising an objective lens and a detector for obtaining one or more of images of each focus in the overlay measurement target; a lens focus actuator moving the objective lens to adjust a distance between the objective lens and a wafer; and a processor controlling an operation of the lens focus actuator. The processor obtains a focus graph respectively in relation to two layers from one or more of the images of each focus, and the processor identifies a reference focus in relation to the obtained focus graphs to move the objective lens.

Abstract: An arrangement device includes: a detector obtaining an image in a field of view (FOV) of a wafer, and a processor digitalizing the obtained image into black and white to model an edge line, and identifying a central position of the wafer by using the modeled edge line. The processor stores three reference points placed at half of a width and half of a height of the FOV, and obtains the image at each of the three reference points.

Abstract: An overlay mark, an overlay measurement method using the same, and a manufacturing method of a semiconductor device using the same are provided. The overlay mark is for measuring an overlay based on an image, is configured to determine a relative misalignment between at least two pattern layers, and includes first to fourth overlay marks. The first overlay mark has a pair of first Moire patterns disposed on a center portion of the overlay mark. The second overlay mark has a pair of second Moire patterns disposed so as to face each other with the first Moire patterns interposed therebetween. The third overlay mark has a pair of third Moire patterns disposed on a first diagonal line with the first Moire patterns interposed therebetween. The fourth overlay mark has a pair of fourth Moire patterns disposed on a second diagonal line with the first Moire patterns interposed therebetween.

Abstract: An overlay measurement device includes a transmission and receipt part and a processor connecting to the transmission and receipt part electrically. The processor obtains data transmitted from a user terminal through the transmission and receipt part, analyzes a recipe included in the data, and performs optimization of measurement options of a wafer, based on the recipe, after the recipe is analyzed.

Abstract: There is provided an overlay measurement device controlling a focus movement, which includes: a lighting part being configured to orient lighting toward an overlay measurement target; a collection part comprising an objective lens and a detector for obtaining one or more of images of each focus in the overlay measurement target; a lens focus actuator moving the objective lens to adjust a distance between the objective lens and a wafer; and a processor controlling an operation of the lens focus actuator. The processor obtains a focus graph respectively in relation to two layers from one or more of the images of each focus, and the processor identifies a reference focus in relation to the obtained focus graphs to move the objective lens.

Abstract: An overlay measurement device for measuring an error between a first overlay mark and a second overlay mark respectively formed on different layers of a wafer, includes: a light source; an aperture that changes a beam from the light source to be suitable for photographing the first overlay mark or the second overlay mark; a detector for obtaining an image of the first overlay mark or an image of the second overlay mark; a transmission and receipt part; and a processor connecting to the transmission and receipt part electrically.