Patents Assigned to Australian Advanced Materials Pty Ltd
  • Memory structure for use in resistive random access memory devices and method for use in manufacturing a data storage device
    Patent number: 10529921
    Abstract: A memory structure for use in a memory device comprising at least one first layer and at least one second layer: the at least one first layer comprises a plurality of a first element, and the at least one second layer comprises a plurality of a second element; and, wherein the memory structure has an electrical resistive state that can be changed in response to an electromotive force being applied thereto.
    Type: Grant
    Filed: June 3, 2016
    Date of Patent: January 7, 2020
    Assignee: Australian Advanced Materials Pty Ltd
    Inventors: Dewei Chu, Sean Suixiang Li
  • RESISTIVE SWITCHING MEMORY
    Publication number: 20190341549
    Abstract: Non-volatile Resistive RAM devices are described prepared using various nanocube dispersions and dispersion based deposition techniques including ink jet printing. Stretchable Resistive RAM devices are described that retain their switching properties after repeated stretch and relaxation cycles and show highly stable ON/OFF ratios after each cycle in the stretched and relaxed state.
    Type: Application
    Filed: December 7, 2017
    Publication date: November 7, 2019
    Applicant: Australian Advanced Materials Pty Ltd
    Inventors: Charles Murphy, Sean Suixiang Li, Dewei Chu, Nicholas John White