Abstract: A substrate (1) of semiconductor material is provided with a contact pad (7). An opening (9) is formed through the semiconductor material from an upper surface to the contact pad, the opening forming an edge (18) at or near the upper surface. A dielectric layer (10) is applied on the semiconductor material in the opening. A metallization (11) is applied, which contacts the contact pad and is separated from the substrate by the dielectric layer. A top-metal (12) is applied, which contacts the metallization at or near the edge. A protection layer (13) is applied, which covers the top-metal and/or the metallization at least at or near the edge, and a passivation (15) is applied.