Abstract: An electrical component, in the crystalline semiconductor body of which several CMOS transistors in high-voltage or low-voltage technology are formed. The individual CMOS transistors are separated from one another by insulation regions. On one insulation region, a thin-film transistor is formed, having a gate that is realized simultaneously with the gates of the CMOS transistors from the same polysilicon layer. The gate oxide of the thin-film transistor, just like a second polysilicon layer for source drain and body of the thin-film transistor, can be produced together with the structural elements already present in the CMOS process.

Abstract: A circuit arrangement (10) comprises a circuit terminal (11) for supplying a data signal (DATA) having digital information, a logic circuit (12) that is coupled at an input (22) to the circuit terminal (11) for supplying the digital information, an activation circuit (13), and a voltage regulator (14) that is coupled for activation to an output (18) of the activation circuit (13). The activation circuit (13) comprises an input (16) that is coupled to the circuit terminal (11), a delay element (17) that is coupled to the input (16) of the activation circuit (13), and the output (18), connected to the delay element (17), for emitting an activation signal (SON).