Abstract: An optical transceiver module is provided that has an EMI absorbing assembly that comprises an EMI absorbing device that is electrically grounded rather than standing in free space in the transceiver module so that the assembly absorbs both the magnetic and electrical components of the EMI. In accordance with an embodiment, the EMI absorbing assembly includes a leadframe about which an EMI absorbing material is cast. The leadframe preferably is shaped in a way that prevents or lessens the occurrence of resonant EMI modes in the transceiver module housing.

Abstract: A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly.

Abstract: An electro-optical assembly (EA) is provided in which the transmitter and receiver components are integrated together on a single circuit board, which is encapsulated in a single molded EA package. Integrating the transmitter and receiver components on a single circuit board allows the size and complexity of the EA to be greatly reduced as compared to the traditional TO-can and FOT architectures. A standard semiconductor inline automation system and process may be used to manufacture the EA packages so that they may be mass produced with improved throughput, yield and quality as compared to the method currently used to manufacture and assemble the known EA used in the traditional TO-can and FOT architectures.

Abstract: An eye mask is provided that is defined at least partially in terms of absolute, or non-relative, optical power level values. In essence, the eye mask of the invention is a hybrid of the traditional eye mask in that the eye mask of the invention includes power level values on the optical power axis that are based on the minimum OMA set forth in the applicable standard or data sheet specification rather than on measured power level values obtained from the part being tested. Using the hybrid eye mask of the invention obviates the need to perform at least some of the tests often used to measure transmitter attributes. In addition, using the hybrid eye mask of the invention reduces the possibility that a transmitter may fail the eye mask test even though the transmitter operates satisfactorily.

Abstract: A photonic semiconductor device and method are provided that ensure that the surface of the device upon completion of the SAG process is planar, or at least substantially planar, such that performance of the subsequent processes is facilitated, thereby enabling higher manufacturing yield to be achieved. A photonic semiconductor device and method are also provided that ensure that the isolation region of the device will have high resistance and low capacitance, without requiring the placement of a thick dielectric material beneath each of the contact pads. Eliminating the need to place thick dielectric materials underneath the contact pads eliminates the risk that the contact pads will peel away from the assembly.

Abstract: A fiber stub assembly is provided that has a cladding layer that is reduced in diameter near the end of the stub into which light is launched from a light source. The portion of the stub having the cladding layer with the reduced diameter is surrounded by a light-absorbing material that is in contact with the inner surface of the ferule and with the outer surface of the cladding layer. The light-absorbing material and the outer surface of the cladding layer have indices of refraction that are matched, or very close to one another, such that any modes of light that are propagating in the cladding layer that impinge on the interface propagate into the light-absorbing material and are absorbed thereby. The reduced diameter of the cladding layer and the surrounding light-absorbing material form a pin hole opening through which light is received.

Abstract: An EMI system is provided for use with an optical transceiver module. The EMI system comprises an EMI collar that is secured about the housing of the transceiver module. The EMI collar is configured such that when the collar is secured to the module housing and the module is contained within a cage, features on the EMI collar provide electrically conductive pathways between the module housing and the cage.

Abstract: Electro-absorption modulators and methods of making the same are described. In one aspect, an electroabsorption modulator includes first and second electrodes, first and second cladding regions, an active region, and a tunnel junction structure. The first and second cladding regions are between the first and second electrodes. The active region is between the first and second cladding regions and includes a light absorption region. The tunnel junction structure is between the active region and one of the first and second cladding regions.

Abstract: An optical transceiver connectable to a test apparatus. The optical transceiver includes a least one test apparatus interface configured to receive from the test apparatus an input causing at least a first transceiver operating parameter to have a level substantially equal to a known value, at least one sensor configured to measure a level of at least one transceiver operating parameter including the level of the first transceiver operating parameter, a data interface configured to provide a value representative of the level of the first transceiver operating parameter, and a controller. The controller is configured to receive and convert the representative value to an actual value using a defined function having a plurality of predetermined coefficients and to provide the actual value to the test apparatus via the data interface.

Abstract: In an embodiment, the invention provides a method for forming a wafer-level package. A bonding pad is formed on a first wafer. After forming the bonding pad, an optoelectronic device is located on the first wafer. A gasket is formed on a second wafer. After a gasket is formed on a second wafer, the second wafer is attached to the first wafer with a bond between the gasket and the bonding pad.

Abstract: A method of manufacturing a tuneable laser assembly including a substrate having formed thereon a plurality of tuneable lasers including Multi Quantum Well (MQW) active sections as well as distributed Bragg reflector (DBR) tuning sections. The lasers have respective emission wavelengths and tuning ranges such that the laser assembly can be tuned over a quasi-continuous predetermined wavelength range. The assembly also includes a plurality of passive waveguides coupled to the lasers to receive therefrom the respective emission wavelengths as well as an optical coupler coupled to the waveguides to receive via the waveguides the emissions wavelengths from the lasers. A Multi Quantum Well (MQW) amplifier coupled to the coupler amplifies the emission wavelengths coupled via the optical coupler.

Abstract: An optoelectronic device includes a submount and a lid. The submount includes a substrate and a lens and a laser above the substrate. The lid defines a cavity having a surface coated with a reflective material to form a 45 degree mirror. The mirror reflects a light from the laser to the lens and the light exits the optoelectronic device through the submount.

Abstract: Vertical cavity surface emitting lasers (VCSELs) and methods of making the same are described. The VCSELs include reliability-enhancing layers that perform specific functions at one or more critical locations within a VCSEL structure to reduce or prevent defect formation and migration that otherwise might degrade VCSEL performance, for example, by increasing optical absorption in the mirror stacks or by degrading the electro-optic properties of the active region. In particular, the reliability-enhancing layers are configured to perform one or more of the following functions within the VCSEL structure: gettering (i.e., removing defects or impurities from critical regions), strain balancing (i.e., compensating the lattice mismatch in the structure to minimize strain), and defect suppression (i.e., creating alloys that reduce the formation of defects during growth or post-growth activities).

Abstract: A method for determining a condition of the laser system includes determining a change in a laser current from an initial value. A method for measuring a laser current includes determining a difference between the values of a power supply current, which is the value of the laser current. A method for measuring a transmitted power includes generating a first control signal that sets a magnitude of a bias current supplied to a laser, generating a second control signal that sets a of a modulation current supplied to the laser, and determining a difference between values of a high and a low transmitted powers. A method for measuring a received optical power includes determining a received OMA corresponding to the power signal, which is the transmitted OMA minus a known loss through a calibration fiber that couples the laser transmitter to the laser receiver.

Abstract: An Integrated Circuits (ICs) comprising a first output stage circuit and a second output stage circuit that share common input terminals and an output terminal of the first and second output stage circuits being selectably coupled between the input terminals and the output terminal in preference to the other.

Abstract: A control loop detects the presence of cross-talk between first, second and third adjacent amplitude modulated wavelength division modulated channels of an optical communications system. A receiver including a demultiplexer, such as an Arrayed Waveguide Grating (AWG), receives portions of the energy in the channels to derive first, second and third electrical signals that are respectively replicas of the modulation of the first, second and third channels. Wavelength drift of the carried frequencies of the channels in detected by comparing the three signals in an electronic combinatorial logic unit.

Abstract: An integrated packaging system that comprises an integral mechanical support, a printed circuit board and the optical communications device. The mechanical support includes a first support element and a second support element. The first support element extends at a non-zero angle from the second support element. The printed circuit board includes a first portion and a second portion in contact with the first support element and the second support element, respectively. The optical communications device is mechanically coupled to the first support element of the mechanical support and is electrically connected to the first portion of the printed circuit board. The integrated packaging system preferably provides automatic alignment between the optical communications device and one or both of an optical element and an optical fiber. In this case, the first support element includes a device alignment feature.

Abstract: A light generating device such as a VCSEL includes a light generation layer, a top reflector, a bottom reflector, and a high thermal conductivity (HTC) layer between the light generation layer and the bottom reflector. The light generation layer is adapted to generate light having a first wavelength. Heat produced at the light generation layer is more efficiently dissipated due to the presence of the HTC layer. Alternatively, a light generating device such as a VCSEL includes a light generation layer, a top reflector, and a high thermal conductivity (HTC) bottom reflector. Heat produced at the light generation layer is more efficiently dissipated due to the fact that the bottom reflector is a HTC DBR reflector having lower thermal resistivity than a conventional DBR reflector.

Abstract: A switching element includes a bubble chamber, a heater and a heat conductor. The bubble chamber holds fluid. The bubble chamber includes a trench within a planar light circuit and includes a trench within an integrated circuit attached to the planar light circuit. The heater is located under the trench within the integrated circuit. The heat conductor is attached to the integrated circuit. The heat conductor is located within the trench within the integrated circuit. A portion of the heat conductor is in close proximity to the heater. The heat conductor is more heat conductive than the fluid within the bubble chamber.

Abstract: Undoped layers are introduced in the passive waveguide section of a butt-joined passive waveguide connected to an active structure. This reduces the parasitic capacitance of the structure.