Patents Assigned to Avansys, LLC
  • Patent number: 6331212
    Abstract: The apparatus provides a temperature controlled environment for processing semiconductor wafers at elevated temperatures. A hot wall process chamber is used for the process steps. The process chamber includes three zones with independent temperature control capabilities. The apparatus is capable of rotating the wafer in addition to providing a gas flow velocity gradient above the wafer for improved temperature and processing uniformity results.
    Type: Grant
    Filed: April 17, 2000
    Date of Patent: December 18, 2001
    Assignee: Avansys, LLC
    Inventor: James J. Mezey, Sr.