Abstract: Provided herein is a highly pure carbohydrate composition, and a method of making a highly pure carbohydrate composition. The method includes passing an aqueous carbohydrate solution through an anion exchange chromatography column including a polyethyleneimine (PEI) chromatographic media to obtain a purified solution, and isolating a highly pure carbohydrate composition from the purified solution.

Abstract: A package system for maintaining the physicochemical integrity of the contents of the package system that includes: an inner bag formed from a gas and/or moisture permeable material, an outer bag formed from an impermeable polymer material, a discharge port that provides access to the interior of the outer bag; and a desiccant or gas scavenging material. The first end of the outer bag sealingly surrounds the exterior wall of the discharge port. The second end of the inner bag is sealed closed and the desiccant or gas scavenging material is disposed in an isolated compartment. The second end of the outer bag is sealed closed to isolate the interior from the environment exterior to the package system.

Abstract: A composition is provided that is effective for removing post etch treatment (PET) polymeric films and photoresist from semiconductor substrates. The composition exhibits excellent polymer film removal capability while maintaining compatibility with copper and low-? dielectrics and contains water, ethylene glycol, a glycol ether solvent, morpholinopropylamine and a corrosion inhibiting compound and optionally one or more metal ion chelating agent, one or more other polar organic solvent, one or more tertiary amine, one or more aluminum corrosion inhibition agent, and one or more surfactant.

Abstract: Compositions and methods for chemical texturing a surface of a polycrystalline silicon wafer to be used in the manufacture of solar cells provide increased efficiency in the manufacture and operation of solar cells. The compositions and methods disclosed herein include first and second components, wherein the first component is a UKON etch composition, including a hydrofluoric acid/nitric acid mixture and water, while the second component includes a silicon wafer texturing enhancer (SWTE).

Abstract: Cleaning compositions suitable for cleaning microelectronic structures having silicon dioxide, low-k or high-k di-electrics and copper or aluminum metallizations contain a polar organic solvent selected from amides, sulfones, sulfolenes, selenones and saturated alcohols and a strong alkaline base.

Abstract: Chromatographic media of porous media particles derivatized with allylamine or polyallylamine obtained directly or through intermolecular polymerization on the surface thereof and such media functionalized with further functionalization groups. Such media are particularly useful for separating biomolecules.

Abstract: A composition is provided that is effective for removing post etch treatment (PET) polymeric films and photoresist from semiconductor substrates. The composition exhibits excellent polymer film removal capability while maintaining compatibility with copper and low-? dielectrics and contains water, ethylene glycol, a glycol ether solvent, morpholinopropylamine and a corrosion inhibiting compound and optionally one or more metal ion chelating agent, one or more other polar organic solvent, one or more tertiary amine, one or more aluminum corrosion inhibition agent, and one or more surfactant.

Abstract: A cleaning composition for cleaning microelectronic or nanoelectronic devices, the cleaning composition having HF as the sole acid and sole fluoride compound in the composition, at least one primary solvent selected from the group consisting of sulfones and selenones, at least one polyhydroxyl alkyl or aryl alcohol co-solvent having metal ion complexing or binding sites, and water, and optionally at least one phosphonic acid corrosion inhibitor compound and the is free of amines, bases and other salts.

Abstract: Compositions and methods for chemical texturing a surface of a polycrystalline silicon wafer to be used in the manufacture of solar cells provide increased efficiency in the manufacture and operation of solar cells. The compositions and methods disclosed herein include first and second components, wherein the first component is a UKON etch composition, including a hydrofluoric acid/nitric acid mixture and water, while the second component includes a silicon wafer texturing enhancer (SWTE).

Abstract: A composition for removal of high dosage ion implanted photoresist from the surface of a semiconductor device, the composition having at least one solvent having a flash point >65° C., at least one component providing a nitronium ion, and at least one phosphonic acid corrosion inhibitor compound, and use of such a composition to remove high dosage ion implanted photoresist from the surface of a semiconductor device.

Abstract: A highly aqueous acidic cleaning composition for copper oxide etch removal from Cu-dual damascene microelectronic structures and wherein that composition prevents or substantially eliminates copper redeposition on the Cu-dual damascene microelectronic structure.

Abstract: A microelectronic photoresist cleaning composition suitable for cleaning multi-metal microelectronic devices and to do so without any substantial or significant galvanic corrosion occurring when there is a subsequent rinsing step employing water.

Abstract: Highly alkaline, aqueous formulations including (a) water, (b) at least one metal ion-free base at sufficient amounts to produce a final formulation alkaline pH, (c) from about 0.01% to about 5% by weight (expressed as % SiO2) of at least one water-soluble metal ion-free silicate corrosion inhibitors; (d) from about 0.01% to about 10% by weight of at least one metal chelating agent, and (e) from more than 0 to about 2.0% by weight of at least one oxymetalate are provided in accordance with this invention. Such formulations are combined with a peroxide such that a peroxymetalate is formed to produce form a microelectronic cleaning composition. Used to remove contaminants and residue from microelectronic devices, such as microelectronic substrates.

Abstract: A stripping and cleaning composition for cleaning microelectronics substrates, the composition comprising: at least one organic stripping solvent, at least one nucleophilic amine, at least one non-nitrogen containing weak acid in an amount sufficient to neutralize from about 3% to about 75% by weight of the nucleophilic amine such that the stripping composition has an aqueous pH of from about 9.6 to about 10.9, said weak acid having a pK value in aqueous solution of 2.0 or greater and an equivalent weight of less than 140, at least one metal-removing compound selected from the group consisting of diethylene glycol and diethylene glycolamine, and water, and method for cleaning microelectronic substrates with these compositions.

Abstract: A microelectronic cleaning compositions of: a) from about 80% to about 99% by weight of the composition of at least one organic sulfone; b) from about 0.5% to about 19% by weight of the composition of water; and c) from about 0.5% to about 10% by weight of the composition of at least one component providing tetrafluoroborate ion, and d) optionally at least one polyhydric alcohol is especially useful to clean etch/ash residues from microelectronic substrates or device having both Si-based anti-reflective coatings and low-k dielectrics.

Abstract: A front end of the line (FEOL) stripping and cleaning composition for cleaning unashed ion-implanted photoresist from a wafer substrate comprises: a) at least one organic stripping solvent, b) fluoride ions from at least one of ammonium fluoride, ammonium bifluoride or hydrogen fluoride, c) at least one acidifying agent selected from inorganic or organic acids, and d) water, with an oxidizing agent optionally also being present in the composition.

Abstract: Back end photoresist strippers and cleaning compositions of this invention are provided by amino acid-free, non-aqueous cleaning compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise at least one polar organic solvent, at least one hydroxylated organic amine, and at least one corrosion inhibitor compound with multiple hydroxyl functional groups that is a compound of the formula: T1-[(CR1R2)m—(CR3R4)n]p—(CR5R6)q-T2 where at least one of R1 and R2 OH and if one of R1 and R2 is not OH, it is selected from H, alkyl or alkoxy, m is a whole integer of 1 or greater, R3 and R4 are selected from H, alkyl or alkoxy, n is 0 or a greater whole positive integer, p is a whole integer of 1 or greater; at least one of R5 and R6 is OH and if one of R5 and R6 is not OH, it is selected from H, alkyl or alkoxy, q is a whole integer of 1 or greater; T1 and T2 are selected from H, alkyl, hydroxyalkyl, polyhydroxyalkyl, aminoalkyl, carbonylalkyl or amide groups or T1 and T2 may be co

Abstract: Photoresist strippers and cleaning compositions of this invention are provided by non-aqueous cleaning compositions that are essentially non-corrosive toward copper as well as aluminum and that comprise at least one polar organic solvent, at least one hydroxylated organic amine, and at least one corrosion inhibitor polymer having multiple hydroxyl- or amino-functional groups pendant from the polymer backbone.

Abstract: Aqueous, silicate free, cleaning compositions of about pH 9 or below and method of using the cleaning compositions for cleaning microelectronic substrates, which compositions are able to essentially completely clean such substrates and produce essentially no metal corrosion of the metal elements of such substrates. The aqueous cleaning compositions of this invention have (a) water, (b) at least one of ammonium and quaternary ammonium ions and (c) at least one of hypophosphite (H2PO2?) and/or phosphite (HPO32?) ions. The cleaning compositions also may contain fluoride ions. Optionally, the composition may contain other components such as organic solvents, oxidizing agent, surfactants, corrosion inhibitors and metal complexing agents.