Abstract: The present invention relates to a process for the fabrication of cobalt interconnections and to an electrolyte which enables the implementation thereof. The electrolyte which has a pH below 4.0 comprises cobalt ions, chloride ions and at most two organic additives of low molecular weight. One of these additives may be an alpha-hydroxy carboxylic acid or a compound having a pKa value ranging from 1.8 to 3.5.
Type:
Grant
Filed:
March 15, 2019
Date of Patent:
July 12, 2022
Assignee:
aveni
Inventors:
Vincent Mevellec, Dominique Suhr, Mikailou Thiam, Louis Caillard
Abstract: The present invention relates to an electrolyte composition for depositing copper on a conductive surface. The composition contains a combination of 2,2?-bipyridine, imidazole, tetra-ethyl-ammonium, and a complexing agent for copper. This electrolyte makes it possible to manufacture small size copper interconnects without any void and with a filling speed that is compatible with industrial constrain. The invention also concerns a process for filling cavities with copper, and a semiconductor device that is obtained according to this process.
Type:
Grant
Filed:
December 26, 2017
Date of Patent:
January 5, 2021
Assignee:
aveni
Inventors:
Laurianne Religieux, Vincent Mevellec, Mikailou Thiam
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