Abstract: A showerhead apparatus for a linear batch CVD system includes a movable showerhead, one or more gas supply conduits, and a translation mechanism. Each gas supply conduit provides a precursor gas to the showerhead. The showerhead includes conduits and channels arranged along the length of the showerhead to distribute precursor gas to the surfaces of substrates. The small distance between the substrates and the showerhead limits precursor gas flows from the channels to a small portion of each substrate beneath the showerhead. During a deposition process run, the translation mechanism causes the showerhead to move back and forth over the substrates along a direction perpendicular to a linear arrangement of the substrates. Parasitic deposition within the deposition chamber is substantially reduced in comparison to conventional showerhead apparatus. The ability to accurately control the precursor gas flows and the motion of the showerhead allows for improved thickness uniformity and device yield.