Abstract: Thin indium-less “optically porous” layers adapted to replace traditional ITO layers are provided herein. A thin metalized film adapted to carry an electrical charge can include a dense pattern of small openings to allow the transmission of light to or from an underlying semiconductor material. The pattern of openings can create a regular or irregular grid pattern of low aspect ratio fine-line metal conductors. Creation of this optically porous metalized film can include the printing of a catalytic precursor material, such as palladium in solution in a pattern on a substrate, drying or curing the catalytic precursor, and the deposition of a thin layer of metal, such as copper on the dried precursor to form the final conductive and optically porous film.
Type:
Grant
Filed:
March 10, 2010
Date of Patent:
November 25, 2014
Assignee:
Averatek Corp.
Inventors:
Sunity Kumar Sharma, Alex Newsom Beavers, Jr., Thomas Furst