Abstract: A nano-vacuum tube (NVT) transistor comprising a source having a knife edge, a drain, and a channel formed between the source and the drain, the channel having a width to provide a pseudo-vacuum in a normal atmosphere. The NVT transistor utilizing a space charge plasma formed at the knife edge within the channel.
Type:
Grant
Filed:
December 4, 2017
Date of Patent:
July 13, 2021
Assignee:
Averoses Incorporated
Inventors:
Sammy K. Brown, John D. Bryant, Thomas Brumett