Patents Assigned to AWA MicroElectronics Pty. Limited
  • Patent number: 5682053
    Abstract: A simox wafer includes substrate (1), simox silicon dioxide layer (2) and monocrystalline simox silicon layer (3). An additional silicon nitride layer (5) is deposited on top of silicon layer (3) to allow the fabrication of a monocrystalline beam (4) by selectively etching the dioxide layer (2). The thermal insulating property of the resultant beam (4) offers an ideal site for construction of thermocouples (29), light modulators (60) and active components such as p-n diodes (34), MOS transistors (47) and bipolar transistors.
    Type: Grant
    Filed: January 18, 1996
    Date of Patent: October 28, 1997
    Assignee: AWA MicroElectronics Pty. Limited
    Inventor: Witold Wiszniewski