Abstract: A wafer processing system is provided. The system includes a wafer handling system for introducing semiconductor wafers into a processing chamber. An oscillator is operatively coupled to an antenna for igniting a plasma within the processing chamber. The plasma and antenna form a resonant circuit with the oscillator, and the oscillator varies an output characteristic associated therewith based on a load change in the resonant circuit during plasma ignition.

Abstract: A thermal process chamber (10) is provided for processing substrates contained therein, comprising (i) a main processing portion (12) in which a substrate to be processed may be positioned, the processing portion defining a first area (44) and providing an opening (21) through which a substrate to be processed may be inserted into and removed from the first area (44) of the process chamber; (ii) an upper portion (11), positioned above the main processing portion, defining a second area (39) and providing a closed end for the process chamber; (iii) a gas injector (18) for providing gas to the second area (39); and (iv) a gas distribution plate (20) separating the first area (44) from the second area (39). The gas distribution plate provides a plurality of passageways (40, 42) for permitting gas provided to the second area to pass into the first area. The gas distribution plate (20) is formed integrally with the main processing portion (12) and with the upper portion (11).

Abstract: A method for stripping photoresist and/or removing post etch residues from an exposed low k dielectric layer of a semiconductor wafer in the presence or absence of copper. The method comprises creating an oxygen free plasma by subjecting an oxygen free gas to an energy source to generate the plasma having electrically neutral and charged particles. The charged particles are then selectively removed from the plasma. The electrically neutral particles react with the photoresist and/or post etch residues to form volatile gases which are then removed from the wafer by a gas stream. The oxygen free, plasma gas composition for stripping photoresist and/or post etch residues comprises a hydrogen bearing gas and a fluorine bearing wherein the fluorine bearing gas is less than about 10 percent by volume of the total gas composition.

Abstract: An ion source (50) for an ion implanter is provided, comprising a remotely located vaporizer (51) and an ionizer (53) connected to the vaporizer by a feed tube (62). The vaporizer comprises a sublimator (52) for receiving a solid source material such as decaborane and sublimating (vaporizing) the decaborane. A heating mechanism is provided for heating the sublimator, and the feed tube connecting the sublimator to the ionizer, to maintain a suitable temperature for the vaporized decaborane. The ionizer (53) comprises a body (96) having an inlet (119) for receiving the vaporized decaborane; an ionization chamber (108) in which the vaporized decaborane may be ionized by an energy-emitting element (110) to create a plasma; and an exit aperture (126) for extracting an ion beam comprised of the plasma. A cooling mechanism (100, 104) is provided for lowering the temperature of walls (128) of the ionization chamber (108) (e.g., to below 350° C.

Abstract: A method for stripping photoresist and/or removing post etch residues from an exposed low k dielectric layer of a semiconductor wafer in the presence or absence of copper. The method comprises creating an oxygen free plasma by subjecting an oxygen free gas to an energy source to generate the plasma having electrically neutral and charged particles, The charged particles are then selectively removed from the plasma. The electrically neutral particles react with the photoresist and/or post etch residues to form volatile gases which are then removed from the wafer by a gas stream. The oxygen free, plasma gas composition for stripping photoresist and/or post etch residues comprises a hydrogen bearing gas and a fluorine bearing wherein the fluorine bearing gas is less than about 10 percent by volume of the total gas composition.

Abstract: A resonator circuit capable of resonating at a predetermined frequency is provided. The resonator circuit comprises a fixed position coil inductor (62) having a longitudinal axis (92) and a capacitor (88, 82) electrically connected in parallel with each other to form a resonator (60), so that respective first and second ends of the inductor and the capacitor are electrically coupled together at a high-voltage end (64) and a low-voltage end (66) of the resonator (60). A radio frequency (RF) input coupling (70) is coupled directly to the inductor (62) at the low-voltage end (66) of the resonator. A high-voltage electrode (72) is coupled to the high-voltage end (64) of the resonator. A first resonator tuning mechanism is provided for varying the inductance of the inductor, comprising a plunger (90) movable within the coil of the inductor (62) along the longitudinal axis (92). A second resonator tuning mechanism is provided for varying the capacitance of the capacitor (88, 82).

Abstract: A method and system for controllably stripping a portion of silicon (98) from a silicon coated surface, for example, from an interior portion of an ion implanter (10). The system comprises (i) a source (80) of gas comprised at least partially of a reactive gas, such as fluorine; and (ii) a dissociation device (70) such as a radio frequency (RF) plasma source located proximate the silicon coated surface for converting the reactive gas to a plasma of dissociated reactive gas atoms and for directing the dissociated reactive gas atoms toward the silicon coated surface. A control system (102) determines the rate of removal of the silicon (98) from the surface by controlling (i) a rate of source gas flow into and the amount of power supplied to the dissociation device, and (ii) the time of exposure of the silicon coated surface to the plasma.

Abstract: A temperature control system (20, 22, 24) is provided for a plasma processing device (10). The plasma processing device (10) comprises a plasma generator (14) and a processing chamber (52) in communication with the plasma generator (14) such that plasma within the generator may pass into the chamber and react with the surface of a substrate (18) residing therein. The temperature control system (20, 22, 24) comprises (i) a radiant heater assembly (20) for heating the substrate (18), comprising a plurality of radiant heating elements (58) arranged in a plurality of zones (a-n), each zone comprising at least one heating element, and a focused reflector (56) for focusing radiant energy from the heating elements toward the substrate; (ii) a feedback mechanism (24) for providing a substrate temperature feedback signal (25); and (iii) a controller (22), including a P-I-D closed loop controller (80) and a lamp power controller (90).

Abstract: A Rutherford backscattering detector for determining the angle of incidence between an ion beam and the crystalline lattice structure of a semiconductor workpiece. A process chamber defines a chamber interior into which one or more workpieces can be inserted for ion treatment, and a rotating workpiece support is disposed within the process chamber for mounting one or more semiconductor workpieces. An energy source sets up an ion plasma from which is created an ion beam which is caused to impact the surface of the semiconductor workpiece. A Rutherford backscattering detector measures the intensity of backscattered particles and the backscattered ion intensity is correlated to an angle of incidence between the ion beam and the crystalline structure of the semiconductor workpiece.

Abstract: The present invention provides ion implantation equipment in which the beam current in a lower energy region can be increased without making the equipment very large and the production of the equipment very expensive. A vacuum chamber 1 contains an ion source 2 and an extractor electrode system 3, and in the vacuum chamber, a liner 4, which covers said ion source and extractor electrode system, is provided across an insulator 5. Further, in the vacuum chamber, a beam guide 7, which guides the ion beam out of said extractor electrode system, is provided across an insulator 8. Around said ion beam guide, a mass analyzer magnet 6 is arranged, while a disk chamber 13 is provided across an insulator 9 at one end of the ion beam guide. A deceleration means of electrode apertures 10, 11 and 12, which converge and decelerate the ion beam, is arranged within said disk chamber.

Abstract: A method and apparatus is provided for controlling the operational parameters of a radio frequency (RF) linear accelerator (linac) (23) in an ion implanter (1). An operator or a higher level computer enters into an input device (10) the desired type of ions, the ionic valence value of ions, the extraction voltage of ion source (21), and the final energy value that is needed. Using internally stored numeric value calculation codes in parameter storage device (18), a control calculation device (11) simulates the ion beam acceleration or deceleration, and the anticipated dispersion of the ion beam, and calculates the RF linac operational parameters of amplitude, frequency and phase for obtaining an optimum transport efficiency. The parameter related to the amplitude is sent from control calculation device (11) to amplitude control device (12) which adjusts the amplitude of the output of RF power supply (15).

Abstract: A plasma immersion ion implantation method and system is provided for maintaining uniformity in implant energy distribution and for minimizing charge accumulation of an implanted substrate such as a wafer. A voltage modulator (27) applies a pulsed voltage signal (−Vp) to a platen (14) in a process chamber (17) containing a plasma, so that ions in the plasma are attracted by and implanted into a wafer residing on the platen. The voltage modulator (27) comprises: (i) a first switch (50) disposed between a power supply (48) and the platen for momentarily establishing a connection therebetween and supplying the pulsed voltage signal to the platen; (ii) a second switch (54) disposed between the platen (14) and ground for at least momentarily closing to discharge residual voltage (−Vr) from the platen after the first switch (50) opens and the connection between the power supply and the platen is broken; and (iii) a controller (56) for controlling sequential operation of the switches (50, 54).

Abstract: An improved bellows assembly (18) is provided for use in, for example, an ion implanter (10). The bellows assembly comprises a first mounting portion (56) located at one end of the bellows assembly for fixedly mounting the bellows assembly to a first vacuum chamber (16); a second mounting portion (54) located at an opposite end of the bellows assembly for slidably mounting the bellows assembly to a second vacuum chamber (15); and a steel bellows (60) located between the first and second mounting portions. The bellows extends generally along a longitudinal axis (64) and is expansible and contractible along this axis. The second mounting portion permits radial slidable movement of the bellows assembly with respect to the second chamber in a first plane substantially perpendicular to this axis.

Abstract: A dual plasma source (80) is provided for a plasma processing system (10), comprising a first plasma source (82) and a second plasma source (84). The first plasma source (82) has a first plasma passageway (86) for transporting a first plasma therethrough toward a processing chamber (16), the first plasma passageway providing a first inlet (90) for accepting a first gas mixture to be energized by the first plasma source. The second plasma source (84) is connected to the first plasma source (82) and has a second plasma passageway (88) for transporting a second plasma therethrough toward the processing chamber (16), the second plasma passageway providing a second inlet (92) for accepting a second gas mixture to be energized by the second plasma source. The first plasma passageway (86) is constructed from a material that resists atomic oxygen recombination with the first plasma, and the second plasma passageway (88) is constructed from a material that resists etching by the second plasma.

Abstract: In accordance with the present invention, an ion implanter including a rotatable support disposed in an implantation chamber of an ion beam implanter for supporting a plurality of wafer workpieces. The rotatable support includes a hub adapted to be rotated about an axis of rotation substantially parallel to a direction of an ion beam beam line entering the implantation chamber. The rotatable support further includes a plurality of wafer support members adapted to be attached to the hub, each wafer support member adapted to support at least one of the wafer workpieces. Each wafer support member includes an attachment structure for affixing the support to the rotating member and a wafer support pad extending from the attachment structure and passing through the beam line as the hub rotates. The wafer support pad includes a wafer support surface facing the beam line that includes a concave portion.

Abstract: A method and system is provided for cleaning a contaminated surface of a vacuum chamber, comprising means for (i) generating an ion beam (44) having a reactive species (e.g., fluorine) component; (ii) directing the ion beam toward a contaminated surface (100); (iii) neutralizing the ion beam (44) by introducing, into the chamber proximate the contaminated surface, a neutralizing gas (70) (e.g., xenon) such that the ion beam (44) collides with molecules of the neutralizing gas, and, as a result of charge exchange reactions between the ion beam and the neutralizing gas molecules, creates a beam of energetic reactive neutral atoms of the reactive species; (iv) cleaning the surface (100) by allowing the beam of energetic reactive neutral atoms of the reactive species to react with contaminants to create reaction products; and (v) removing from the chamber any volatile reaction products that result. Alternatively, the method and system include means for (i) generating an energetic non-reactive (e.g.

Abstract: A compact coil design is provided for a linear accelerator resonator (70) capable of resonating at a predetermined frequency. The coil (90) comprises a plurality of generally circular coil segments (90a-90n), each of the coil segments having a polygonal cross section wherein flat surfaces (122) of adjacent coil segments face each other. The polygonal cross section may take the form of a rectangle having dimensions of length x and width y, wherein dimension x section defines the flat surfaces (122) of adjacent coil segments (90a-90n). The coil segments (90a-90n) are provided with a dual channel construction for providing the introduction of a cooling medium into the coil. The dual channel construction comprises an inlet passageway (118) and an outlet passageway (120) having separate a separate inlet (100) and outlet (102), respectively, at a first end (94) of the coil, and wherein the inlet and outlet passageways (118, 120) are connected and in communication with each other at a second end (96) of the coil.

Abstract: Method and apparatus for use in treating a workpiece implantation surface by causing ions to impact the workpiece implantation surface. Ions emitted by an ion source are accelerated away from the ion source to form an ion beam. A magnetic field is created for intercepting the ions in the ion beam exiting the source and selectively deflectiing the ions away from an initial trajectory in a generally arcuate scanning motion. The magnetic field is created by synchronized energization of first and second current carrying coils located along an inner surface of a ferromagnetic support. The beam is deflected away from the initial trajectory by a controlled amount in a time varying manner to cause the beam to sweep through an arcuate path and impact the workpiece.

Abstract: A variable aperture assembly (30) is provided for controlling the amount of ion beam current passing therethrough in an ion implantation system (10). The aperture assembly (30) comprises an aperture (44) defined by opposing first and second aperture plates (44A, 44B) through which an ion beam passes; control arms (46A, 46B) connected, respectively, to the first and second aperture plates (44A, 44B); and an aperture drive mechanism (36) for simultaneously imparting movement to the control arms in opposite directions, to adjust a gap (50) between the aperture plates (44A, 44B) to thereby control the amount of current passing through the aperture (44). Each of the opposite directions in which the control arms move is generally perpendicular to an axis along which the ion beam passes. A control system (120) is also provided for automatically adjusting the aperture gap (50) based on inputs representing actual ion beam current passing through the implanter, desired ion beam current, and aperture position.

Abstract: A filament (18) for an ion implanter ion source or plasma shower is provided comprising first and second legs (20a, 20b) and a thermally emissive central portion (40) having ends connected, respectively, to the first and second legs. Preferably, the legs (20a, 20b) are constructed from tantalum (Ta), and the thermally emissive portion (40) is constructed of tungsten (W). The thermally emissive portion is coiled substantially along the entire length thereof and formed in the shape of a generally closed loop, such as a toroid. The toroid is comprised of two toroid halves (40a, 40b) coiled in opposite directions. The toroid halves are constructed of a plurality of filament strands (42, 44, 46) twisted together along substantially the entire length thereof. The coils of the toroid are capable of establishing closed loop magnetic field lines (B) therein when electrical current flows through the thermally emissive portion.