Abstract: A process and apparatus for cooling a plasma tube generally includes flowing a hydrocarbon dielectric heat transfer fluid into a space defined by the plasma tube and a concentric tube surrounding the plasma tube. In one embodiment, the hydrocarbon fluid is selected to have a dissipation factor less than 0.002 and a thermal efficiency coefficient greater than or equal to 1.30 kJ/kg*K.

Abstract: One or more aspects of the present invention pertain to determining a relative orientation between an ion beam and lattice structure of a workpiece into which ions are to be selectively implanted by the ion beam, and calibrating an ion implantation system in view of the relative orientation. The beam to lattice structure orientation is determined, at least in part, by directing a divergent ion beam at the workpiece and finding the angle of the aspect of the divergent beam that implants ions substantially parallel to crystal planes of the workpiece, and thus causes a small amount of damage to the lattice structure.

Abstract: A reciprocating drive system, method, and apparatus for scanning a workpiece are provided, wherein a motor comprising a rotor and stator operable to individually rotate about a first axis is operable to reciprocally translate the workpiece with respect to a stationary reference. A shaft rotatably driven by the rotor extends along the first axis, and a scan arm is operably coupled to the shaft, wherein the scan arm is operable to support the workpiece thereon. Cyclical counter rotations of the shaft by the motor are operable to rotate the scan arm, therein scanning the workpiece through the ion beam along a first scan path, wherein the stator acts as a reaction mass to the rotation of the rotor. A controller is further operable to control an electromagnetic force between the rotor and the stator, therein generally determining a rotational position of the rotor and the stator.

Abstract: Method and apparatus for use in setting up workpiece treatment or processing equipment. A disclosed system processes silicon wafers that are treated during processing steps in producing semiconductor integrated circuits. The processing equipment includes a wafer support that supports a wafer in a treatment region during wafer processing. A housing provides a controlled environment within the housing interior for processing the wafer on the wafer support. A mechanical transfer system transports wafers to and from the support. A wafer simulator is used to simulate wafer movement and includes a pressure sensor for monitoring contact between the simulator and the wafer transfer and support equipment. In one illustrated embodiment the wafer simulator is generally circular and includes three equally spaced pressure sensors for monitoring contact with wafer transport and support equipment.

Abstract: A transfer system for use with a tool for processing a work-piece at low or vacuum pressure such as an ion implanter for implanting silicon wafers. An enclosure defines a low pressure region for processing of work-pieces placed at a work-piece processing station within the low pressure region. A two tier multiple work-piece isolation load lock transfers work-pieces from a higher pressure region to the lower pressure for processing and back to said higher pressure subsequent to said processing. A first robot transfers work-pieces within the low pressure region from the load locks to a processing station within the low pressure region. Multiple other robots positioned outside the low pressure region transfers work-pieces to and from the two tier work-piece isolation load locks from a source of said work-pieces prior to processing and to a destination of said work-pieces after said processing.

Abstract: An ion beam implanter includes an ion beam source for generating an ion beam moving along a beam line and an implantation chamber wherein a workpiece is positioned to intersect the ion beam for ion implantation of an implantation surface of the workpiece by the ion beam. The implanter further includes a workpiece support structure coupled to the implantation chamber and supporting the workpiece within an interior region of the implantation chamber, the workpiece support structure. The workpiece support structure includes a rotation member coupled to the implantation chamber for changing an implantation angle of the workpiece with respect to a portion of the ion beam within the implantation chamber. The workpiece support structure also includes a translation member movably coupled to the rotation member and supporting the workpiece for movement along a path of travel wherein at least some components of the translation member components are disposed within a reduced pressure translation member chamber.

Abstract: The present invention is directed to a scanning apparatus and method for processing a workpiece, wherein the scanning apparatus comprises a wafer arm and moving arm fixedly coupled to one another, wherein the wafer arm and moving arm are operable to rotate about a first axis. An end effector, whereon the workpiece resides, is coupled to the wafer arm. A rotational shaft couples the wafer arm and moving arm to a first actuator, wherein the first actuator provides a rotational force to the shaft. A momentum balance mechanism is coupled to the shaft and is operable to generally reverse the rotational direction of the shaft. The momentum balance mechanism comprises one or more fixed spring elements operable to provide a force to a moving spring element coupled to the moving arm. A controller is further operable to maintain a generally constant translational velocity of the end effector within a predetermined scanning range.

Abstract: A transfer system for use with a tool for processing a work-piece at low or vacuum pressure such as an ion implanter for implanting silicon wafers. An enclosure defines a low pressure region for processing of work-pieces placed at a work-piece processing station within the low pressure region. A two tier multiple work-piece isolation load lock transfers work-pieces from a higher pressure region to the lower pressure for processing and back to said higher pressure subsequent to said processing. A first robot transfers work-pieces within the low pressure region from the load locks to a processing station within the low pressure region. Multiple other robots positioned outside the low pressure region transfers work-pieces to and from the two tier work-piece isolation load locks from a source of said work-pieces prior to processing and to a destination of said work-pieces after said processing.

Abstract: The present invention facilitates operation of systems by managing and authenticating components, including parts and subsystems, present within a system. The present invention includes RFID tags individually associated with the components of the system. The RFID tags generally include at least a part number and a serial number for the components. One or more readers are present and communicate with the RFID tags via a wireless communication medium. A controller generates interrogatory signals, receives response signals from the RFID tags, and employs the received response signals to authenticate the components.

Abstract: An ion implanter includes an ion source for generating an ion beam moving along a beam line and a vacuum or implantation chamber wherein a workpiece, such as a silicon wafer is positioned to intersect the ion beam for ion implantation of a surface of the workpiece by the ion beam. An ion source includes a ionization chamber and an ionization chamber electrode defining an ionization chamber aperture, wherein the ionization chamber electrode includes a raised portion for generating substantially uniform electric fields in the region adjacent the ionization chamber electrode.

Abstract: An ion implantation system employs a mass analyzer for both mass analysis and angle correction. An ion source generates an ion beam along a beam path. A mass analyzer is located downstream of the ion source that performs mass analysis and angle correction on the ion beam. A resolving aperture within an aperture assembly is located downstream of the mass analyzer component and along the beam path. The resolving aperture has a size and shape according to a selected mass resolution and a beam envelope of the ion beam. An angle measurement system is located downstream of the resolving aperture and obtains an angle of incidence value of the ion beam. A control system derives a magnetic field adjustment for the mass analyzer according to the angle of incidence value of the ion beam from the angle measurement system.

Abstract: The present invention is directed to a method for thermally processing a substrate in a thermal processing system. The method provides an amount of heat to the substrate and obtains information associated with the substrate when the amount of heat is provided. For example, the substrate is provided at a presoak position within the thermal processing system, wherein the presoak position, and one or more properties associated with the substrate, such as a position and temperature, are measured. An optimal process parameter value to provide an optimal thermal uniformity of the substrate is then determined, based, at least in part, on the information obtained from the substrate. For example, a soak position of the substrate is determined, wherein the determination is based, at least in part, on the one or more measured properties associated with the substrate, and a thermal uniformity associated with a reference data set.

Abstract: An ion beam implanter includes ion beam forming and directing apparatus and an implantation station where workpieces are implanted with ions from an ion beam. The beam travels along an evacuated path from an ion source to the implantation station. A flexible bellows couples the implantation station to the beam forming and directing apparatus permitting the implantation station to be pivoted with respect to the beam forming and directing apparatus and thereby change an implantation orientation of the workpieces with respect to the ion beam. A replaceable, flexible bellows liner is disposed within an interior region of the bellows to reduce the volume of implantation byproducts deposited on an interior surface of the bellows.

Abstract: A remote plasma source employs a helical coil slow wave structure to couple microwave energy to a flowing gas to produce plasma for downstream substrate processing, such as photoresist stripping, ashing, or etching. The system also includes cooling structures for removing excess heat from the plasma source components.

Abstract: An ion implanter having a source, a workpiece support and a transport system for delivering ions from the source to an ion implantation chamber that contains the workpiece support. The implanter includes one or more removable inserts mounted to an interior of either the transport system or the ion implantation chamber for collecting material entering either the transport system or the ion implantation chamber due to collisions between ions and the workpiece within the ion implantation chamber during ion processing of the workpiece. A temperature control coupled to the one or more removable inserts for maintaining the temperature of the insert at a controlled temperature to promote formation of a film on said insert during ion treatment due to collisions between ions and said workpiece.

Abstract: An electrodeless lamp and process for emitting ultraviolet and/or vacuum ultraviolet radiation comprises an envelope formed of an ultra-pure and/or low-defect quartz material and an ultraviolet and/or vacuum ultraviolet emissive material disposed in the interior region of the envelope. The electrodeless lamp formed of the ultra-pure and/or low-defect quartz material minimizes degradation during use.

Abstract: The present invention is directed to a semiconductor thermal processing system and an apparatus for thermally cooling a semiconductor substrate. According to one aspect of the present invention, a semiconductor thermal processing system and associated apparatus and method are disclosed which provides a segmented cold plate situated within a process chamber, wherein a plurality of segments of the cold plate are operable to radially translate between an engaged position and a disengaged position, wherein a substrate holder may pass between the plurality of segments when the segments are in the disengaged position. According to another aspect, an elevator is operable to linearly translate a substrate residing on a substrate holder between a heating position proximate to a heater assembly and a cooling position proximate to the segmented cold plate.

Abstract: A reactor assembly and processing method for treating a substrate generally includes a base unit, a chuck assembly, a process chamber, an inlet manifold assembly and an exit manifold assembly. The inlet manifold assembly is in fluid communication with a first opening of the process chamber, wherein the inlet manifold assembly comprises a flow-shaping portion adapted to laterally elongate a gas and/or a reactant flow into the process chamber. The exhaust manifold assembly in fluid communication with a second opening of the process chamber and is diametrically opposed to the inlet manifold assembly. The process includes flowing a gas and/or reactive species into the process chamber of the reactor assembly in a direction that is about planar with the substrate surface providing improved uniformity and increased reactivity.

Abstract: An electrostatic clamp for securing a semiconductor wafer during processing. The electrostatic clamp includes a base member, a first dielectric layer, a second dielectric layer having a gas pressure distribution micro-groove network formed therein, a gas gap positioned between a backside of a semiconductor wafer and the second dielectric layer, and a pair of high voltage electrodes positioned between the first dielectric layer and the second dielectric layer.

Abstract: A method for reciprocally transporting a workpiece on a scan arm through an ion beam is provided, wherein the scan arm is operably coupled to a motor comprising a rotor and stator that are individually rotatable about a first axis. An electromagnetic force applied between the rotor and stator rotates the rotor about the first axis and translates the workpiece through the ion beam along a first scan path. A position of the workpiece is sensed and the electromagnetic force between the rotor and stator is controlled in order to reverse the direction of motion of the workpiece along the first scan path, and wherein the control is based, at least in part, on the sensed position of the workpiece. The stator further rotates about the first axis in reaction to the rotation of the rotor, particularly in the reversal of direction of motion of the workpiece, thus acting as a reaction mass to the rotation of one or more of the rotor, scan arm, and workpiece.