Abstract: A method of treating a dielectric material deposited on a substrate in semiconductor device manufacturing processes. The dielectric material is exposed to radiation. The dielectric material is exposed to a temperature of 20° C. or greater. The dielectric material is exposed to an atmosphere that includes at least one material selected from the group consisting of an amine, an amide, at least one aldehyde, at least one aromatic compound and N2.
Type:
Grant
Filed:
May 26, 1998
Date of Patent:
July 9, 2002
Assignee:
Axeclis Technologies, Inc.
Inventors:
Terrence Alair McDevitt, Robert Douglas Mohondro