Abstract: Temperature controlled polishing pads are disclosed. In one aspect, a CMP system includes the use of any type of atomizing system to cool or remove energy and/or heat from the polishing pad of a CMP system. The atomizing system can use of any liquid medium in combination of any compressed gas through an orifice to cool or remove the energy and/or heat from the pad, thereby allowing for higher removal rates during CMP.

Abstract: A method and a system for polishing a wafer is disclosed. In one aspect, the method includes generating atmospheric plasma. The method further includes treating a component of a wafer processing system with the atmospheric plasma. The method further includes delivering a slurry containing abrasive and corrosive particles to a surface of the wafer processing system which includes atmospheric plasma-treated component. The method further includes polishing a wafer with the abrasive and corrosive particles.

Abstract: Containment and exhaust systems for substrate polishing components are disclosed. In one aspect, a substrate carrier head, includes a polishing pad, a substrate carrier head configured to retain a wafer against the polishing pad, an atomizer configured to atomize a liquid and spread a layer of the atomized liquid over a surface area of the polishing pad, and a chamber configured to contain and exhaust the atomized liquid.

Abstract: A substrate carrier head is disclosed. In one aspect, the carrier head includes a carrier body, a substrate retainer, a first resilient membrane and a second resilient membrane. The carrier head can include an inner support plate. The substrate retainer is attached to the carrier body. The substrate retainer includes an aperture configured to receive a substrate. The first resilient membrane includes a first imperforated substrate support portion with a width W1. The second resilient membrane includes a second imperforated substrate support portion with a width W2. The second imperforated substrate support portion is positioned between the first substrate support portion and the carrier body, and is configured to selectively provide a force against at least an inner section of the first imperforated substrate support portion. The inner support plate is fixed relative to the carrier body and includes a support surface configured to support the second imperforated substrate support portion.

Abstract: A method and apparatus for insitu adjustment of wafer slip detection during work piece polishing are disclosure. In one aspect, a chemical mechanical planarization (CMP) system, includes: a carrier configured to retain a substrate, a platen supporting a polishing pad, and a slip sensor configured to generate a signal indicative of a characteristic of a surface of the polishing pad. The system further includes a processor configured to: receive the signal from the slip sensor, calibrate a steady-state value of the signal when the CMP system is in a steady-state condition, compare the signal received from the slip sensor to the calibrated steady-state value during CMP polishing, and detect wafer slip in response to the signal received from the slip sensor during the CMP polishing differing from the calibrated steady-state value by more than a threshold value.

Abstract: A method and a system for planarizing a membrane is disclosed. In one aspect, the method includes providing a resilient membrane and planarizing the surface of the membrane with a conditioning tool. The planarized membrane may be used in chemical mechanical planarization of a wafer. The method further includes finishing the surface of a wafer with the planarized membrane.

Abstract: A system includes a CMP carrier that includes a resilient flexible membrane upon which a wafer is mounted, at least three ports for supplying air to the resilient flexible membrane to pneumatically pushing on the wafer through pressure applied throughout the surface area of the resilient flexible membrane to have more uniform pressure. Each port provides pressure to different components of the carrier to adjust pressure or vary pressure during processing of the wafer. Further, the system includes a processor and software program for implementing the CMP carrier with existing CMP machines. The software application converts the air pressure applied to the carrier into units that allow the CMP machine to receive expected data and operate in accordance with the existing commands.

Abstract: A workpiece processing apparatus is provided. The apparatus includes a rotary turntable having one or more spindles thereon, the turntable being configured to rotate about a turntable axis. Each of the spindles is configured to receive and secure thereon a workpiece to be processed by the apparatus. Each of the spindles can rotate about their own independent axes. The apparatus includes one or more grind spindles that overlay the turntable and are configured to communicate with the workpieces. The apparatus processes the workpieces by transitioning between first and second operational states. The first operational state centers the spindles and the workpieces thereon under the grind spindle to condition an entire top surface of the workpieces. The second operational state offsets the spindles from the center of the grind spindle to condition a perimeter edge of the workpieces. A controller can govern the transition between first and second operational states.

Abstract: An apparatus for performing both edge trimming and surface grinding includes two spindles for holding two workpieces, a bridge element laterally movable relative to the spindles, and two grinding wheels coupled to the bridge element. The apparatus may be a surface grinding apparatus that includes a system for enabling the surface grinding apparatus to additionally perform edge trimming. A method for processing the workpieces entails placing the two workpieces on the two spindles of the apparatus, directing the bridge element to move laterally to an edge trimming position to trim the outer edge of one workpiece using one of the grinding wheels, to move laterally to another edge trimming position to trim the outer edge of the other workpiece using one of the grinding wheels, and to move laterally to surface grinding positions to perform surface grinding on both of the workpieces using one or both of the grinding wheels.

Abstract: A workpiece processing apparatus is provided. The apparatus includes a rotary turntable having one or more spindles thereon, the turntable being configured to rotate about a turntable axis. Each of the spindles is configured to receive and secure thereon a workpiece to be processed by the apparatus. Each of the spindles can rotate about their own independent axes. The apparatus includes one or more grind spindles that overlay the turntable and are configured to communicate with the workpieces. The apparatus processes the workpieces by transitioning between first and second operational states. The first operational state centers the spindles and the workpieces thereon under the grind spindle to condition an entire top surface of the workpieces. The second operational state offsets the spindles from the center of the grind spindle to condition a perimeter edge of the workpieces. A controller can govern the transition between first and second operational states.

Abstract: An apparatus for performing both edge trimming and surface grinding includes two spindles for holding two workpieces, a bridge element laterally movable relative to the spindles, and two grinding wheels coupled to the bridge element. The apparatus may be a surface grinding apparatus that includes a system for enabling the surface grinding apparatus to additionally perform edge trimming. A method for processing the workpieces entails placing the two workpieces on the two spindles of the apparatus, directing the bridge element to move laterally to an edge trimming position to trim the outer edge of one workpiece using one of the grinding wheels, to move laterally to another edge trimming position to trim the outer edge of the other workpiece using one of the grinding wheels, and to move laterally to surface grinding positions to perform surface grinding on both of the workpieces using one or both of the grinding wheels.