Patents Assigned to AZ Electronics Materials (LUXEMBOURG) S.Á.R.L.
  • Patent number: 10385234
    Abstract: The invention relates to the use of a hybrid material comprising a) an organopolysilazane material and b) at least one surface-modified nanoscale inorganic oxide as coating material for producing transparent layers having a thickness of less than 500 ?m in optoelectronic components.
    Type: Grant
    Filed: July 28, 2015
    Date of Patent: August 20, 2019
    Assignee: AZ Electronics Materials (LUXEMBOURG) S.Á.R.L.
    Inventors: Ralf Grottenmüller, Rosalin Karunanandan, Fumio Kita, Helmut Lenz, Dieter Wagner, Andreas Dresel
  • Patent number: 10259907
    Abstract: The present invention relates to a novel block copolymer of structure 1, wherein, A- is a block polymer chain, B is a block polymer chain, wherein, A- and B- are chemically different, covalently connected polymer chains, which are phase separable and the moiety X(Y(Z)b)a is a junction group, which comprises a surface active pendant moiety Y(Z)b wherein: a is an integer from 1 to 4 denoting the number of surface active pendant moieties Y(Z)b on X, b is an integer from 1 to 5 denoting the number of Z moieties on the linking moiety Y, X is a linking group between the A polymer block, the B polymer block and the moiety Y, Y is a linking group or a direct valence bond between X and Z; and Z is a moiety independently selected from, a fluorine containing moiety, a Si1-Si8 siloxane containing moiety or a hydrocarbon moiety with at least 18 carbons, and further wherein the junction group X(Y(Z)b)a has a surface energy less than that that of the block A and less than that of the block B.
    Type: Grant
    Filed: February 20, 2015
    Date of Patent: April 16, 2019
    Assignees: AZ Electronic Materials (Luxembourg) S.à r.l., IBM Corporation
    Inventors: Ankit Vora, Eri Hirahara, Joy Cheng, Durairaj Baskaran, Orest Polishchuk, Melia Tjio, Margareta Paunescu, Daniel Sanders, Guanyang Lin
  • Patent number: 10241409
    Abstract: Compositions having a high metal content comprising a metal salt solution, a stabilizer and one or more optional additives, wherein the metal salt solution comprises a metal ion, a counter ion and a solvent. The compositions are useful for forming films on substrates in the manufacture of solid state and integrated circuit devices.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: March 26, 2019
    Assignee: AZ Electronic Materials (Luxembourg) S.à.r.l.
    Inventors: Huirong Yao, M. Dalil Rahman, Douglas McKenzie, JoonYeon Cho
  • Publication number: 20190064660
    Abstract: To provide a positive type photosensitive composition capable of forming a pattern of high resolution, of high heat resistance and of high transparency without emitting harmful volatile substances such as benzene, also capable of reducing pattern defects caused by development residues, by undissolved residues, or by reattached hardly-soluble trace left in pattern formation, and further capable of being excellent in storage stability. The present invention provides a positive type photosensitive siloxane composition comprising: a polysiloxane having a phenyl group, a diazonaphthoquinone derivative, a hydrate or solvate of a photo base-generator having a particular nitrogen-containing hetero-cyclic structure, and an organic solvent.
    Type: Application
    Filed: January 20, 2017
    Publication date: February 28, 2019
    Applicant: AZ Electronic Materials (Luxembourg) S.à r.l.
    Inventors: Motoki MISUMI, Daishi YOKOYAMA, Megumi TAKAHASHI, Toshiaki NONAKA
  • Patent number: 10155879
    Abstract: The present invention relates to non aqueous, graftable coating composition comprised of a homogenous solution of a polymer and a spin casting organic solvent, where the composition does not contain acidic compounds, coloring particles, pigments or dyes, and the polymer has a linear polymer chain structure which is comprised of repeat units derived from monomers containing a single polymerizable olefinic carbon double bond, and the polymer contains at least one triarylmethyl chalcogenide containing moiety which is selected from the group consisting of repeat units having structure (I) an end chain group unit of structure (II) and mixtures thereof, and the polymer does not contain any repeat units or end groups containing water ionizable groups, ionic groups, free thiol groups, or free hydroxy groups, and where A1, A2, and A3 are independently an Aryl or a substituted Aryl; Y is a chalcogen selected from O, S, Se or Te; X1 and X2 are individually selected organic spacers; P1 is an organic polymer repeat unit m
    Type: Grant
    Filed: December 21, 2015
    Date of Patent: December 18, 2018
    Assignee: AZ Electronic Materials (Luxembourg) S.à.r.l.
    Inventors: Guanyang Lin, Hengpeng Wu, JiHoon Kim, Jian Yin, Durairaj Baskaran, Jianhui Shan
  • Patent number: 10000386
    Abstract: A siliceous film having high purity and a low etching rate is formed by (a) a step for forming a siliceous film on a substrate by coating a solution composed of a polysilazane, e.g., perhydropolysilazane on a substrate and then hardening (curing) the solution in an oxidizing atmosphere, or by coating a silica solution formed by a sol-gel method on a substrate, and (b) a step for heating the siliceous film in an inert gas environment containing a nitrogen-containing compound such as an alkylamine having a base dissociation constant (pKb) no greater than 4.5, or a halogen-containing compound in which the bond energy of a halogen atom such as F2, Br2, or NF3 is no greater than 60 kcal/mol, in order to anneal the film.
    Type: Grant
    Filed: November 15, 2013
    Date of Patent: June 19, 2018
    Assignee: AZ Electronic Materials (Luxembourg) S.à.r.l.
    Inventors: Masanobu Hayashi, Tatsuro Nagahara
  • Patent number: 9921481
    Abstract: The present invention provides a composition enabling to form a fine negative photoresist pattern free from troubles such as surface roughness, bridge defects or unresolved defects, and the invention also provides a pattern formation method employing that composition. The composition is used for miniaturizing a resist pattern by applying to a negative resist pattern from a chemically amplified resist composition and fattening the resist pattern. This composition comprises a polymer comprising a repeating unit having an amino group or a polymer mixture, and a solvent, and further comprises a specific amount of an acid or indicates a specific pH value. The polymer mixture comprises polymers whose HSP distance, determined from Hansen solubility parameter, is 3 or more. In the pattern formation method, the composition is cast on a negative photoresist pattern beforehand obtained by development with an organic solvent developer and is then heated to form a fine pattern.
    Type: Grant
    Filed: February 26, 2014
    Date of Patent: March 20, 2018
    Assignee: AZ Electronic Materials (Luxembourg) S.à r.l.
    Inventors: Kazuma Yamamoto, Yoshihiro Miyamoto, Takashi Sekito, Tatsuro Nagahara
  • Patent number: 9817312
    Abstract: A heat- or photo-curable composition comprising: a polysiloxane which is produced by reacting a silicon compound (i) represented by the formula: R1nSi(X)4-n (wherein R1 represents an alkyl group, an aryl group or the like; X represents a chlorine atom or an alkoxy group; and n represents 0 to 2) with a silicon compound (ii) represented by the formula (b) or (c) (wherein R2 to R7 independently represent an alkyl group or the like; M1 and M2 independently represent an arylene group, an alkylene group or the like; and Y1 to Y6 independently represent a chlorine atom or an alkoxy group) in the presence of an alkali catalyst or an acid catalyst; a polymerization initiator which enables the generation of an acid or a base by the action of heat or light; and a solvent. The composition enables the formation of a thick film. When the composition is coated onto a substrate, is then heated or exposed to light, is then developed if necessary, and is then heated and cured at a low temperature, a cured film can be formed.
    Type: Grant
    Filed: October 14, 2014
    Date of Patent: November 14, 2017
    Assignee: AZ Electronic Materials (Luxembourg) S.à r.l.
    Inventors: Naofumi Yoshida, Yuji Tashiro
  • Patent number: 9793109
    Abstract: [Problem] To provide a perhydropolysilazane making it possible to form a siliceous film with minimal defects, and a curing composition comprising the perhydropolysilazane. [Means for Solution] The present invention provides a perhydropolysilazane having a weight-average molecular weight of 5,000 to 17,000, characterized in that when 1H-NMR of a 17% by weight solution of said perhydropolysilazane dissolved in xylol is measured, the ratio of the amount of SiH1,2 based on the aromatic ring hydrogen content of the xylol is 0.235 or less and the ratio of the amount of NH based on the aromatic ring hydrogen content of the xylol is 0.055 or less, and a curing composition comprising the perhydropolysilazane. The present invention also provides a method for forming a siliceous film, comprising coating the curing composition on a substrate and heating.
    Type: Grant
    Filed: December 8, 2014
    Date of Patent: October 17, 2017
    Assignee: AZ Electronic Materials (Luxembourg) S.à.r.l.
    Inventors: Toshiya Okamura, Takashi Kanda, Issei Sakurai, Bertram Bernd Barnickel, Hiroyuki Aoki
  • Patent number: 9684240
    Abstract: To provide a negative-working photosensitive siloxane composition developable inorganically, and also to provide a cured film-manufacturing method employing that. The present invention provides a negative-working photosensitive siloxane composition comprising a polysiloxane, a silicon-containing compound having an ureido bond, a polymerization initiator, and a solvent. This composition is coat on a substrate, exposed to light, and developed, so that a cured film can be obtained without carrying out post-exposure baking.
    Type: Grant
    Filed: April 5, 2013
    Date of Patent: June 20, 2017
    Assignee: AZ Electronic Materials (Luxembourg) S.à.r.l.
    Inventors: Daishi Yokoyama, Atsuko Noya, Yuji Tashiro, Naofumi Yoshida, Yasuaki Tanaka, Takashi Fuke, Megumi Takahashi, Katsuto Taniguchi, Toshiaki Nonaka