Abstract: The invention relates to a method for producing substrates having a plasma coated surface made of a dielectric coating material in a vacuum chamber, having an AC-powered plasma device, comprising moving a substrate relative to the plasma device by means of a movement device along a curve, and depositing coating material on a surface of the substrate in a coating region along a trajectory lying on the surface of the substrate using the plasma device.

Abstract: A system is provided for in-situ ion beam etch rate or deposition rate measurement, including: a vacuum chamber; an ion beam source configured to direct an ion beam onto a first surface of a sample located within the vacuum chamber and to etch the first surface of the sample with an etch rate; or a material source configured to deposit material onto a first surface of a sample located within the vacuum chamber with a deposition rate; and an interferometric measurement device located at least partially within the vacuum chamber and configured to direct light onto a second surface of the sample and to determine the etch rate of the ion beam or the deposition rate of the deposited material in-situ based on light reflected from the sample.

Abstract: An apparatus for the vacuum treatment of substrates in a vacuum chamber includes a substrate support device with a pylon which can be rotated about a longitudinal axis and has holding means for substrates and a plasma discharge device assigned to the pylon. The plasma discharge device includes more than two plate-shaped electrodes having excitation areas, the excitation areas of which are all oriented in the direction of the pylon and a power supply device for the excitation of a plasma discharge, by at least one electrical voltage applied to at least two of the electrodes, is provided, the excited plasma acting at least on parts of the pylon and on substrates that can be arranged on them. A process performs the vacuum coating by the apparatus.

Abstract: An inline coating system has an introduction chamber comprising an introduction gate, a first buffer chamber which connects to the introduction chamber and which can be separated from the introduction chamber by means of a first sluice gate and other components. The first buffer chamber has a gap sluice device with at least one slit diaphragm, and when the first insertion gate is opened or closed, a pressure gradient within the first buffer chamber is adjusted between the pressure in the region of the second insertion gate and the pressure in the region of the first insertion gate.

Abstract: An apparatus for the vacuum treatment of substrates in a vacuum chamber includes a substrate support device with a pylon which can be rotated about a longitudinal axis and has holding means for substrates and a plasma discharge device assigned to the pylon. The plasma discharge device includes more than two plate-shaped electrodes having excitation areas, the excitation areas of which are all oriented in the direction of the pylon and a power supply device for the excitation of a plasma discharge, by at least one electrical voltage applied to at least two of the electrodes, is provided, the excited plasma acting at least on parts of the pylon and on substrates that can be arranged on them. A process performs the vacuum coating by the apparatus.

Abstract: The invention relates to a method for operating an inline coating system which has an introduction chamber comprising an introduction gate, a first buffer chamber which connects to the introduction chamber and which can be separated from the introduction chamber by means of a first sluice gate and other components.

Abstract: A gas distribution apparatus in a vacuum chamber includes a gas conducting device that includes at least one gas duct equipped with nozzles from which gas can be distributed into the vacuum chamber, and a gas supplying device which allows gas to be supplied to the gas conducting device. The at least one gas duct is formed by a part designed as a single-piece hollow profile. The part designed as a single-piece hollow profile also forms at least one gas supply channel of the gas supplying device.