Abstract: Structures are disclosed for a binned set of two or more pixels of a pixel array that share a same readout circuit. The binned pixel design provides space-saving benefits on the chip and also improves the overall image quality. According to some embodiments, each of the binned pixels includes a photodetector and its own transfer gate. The readout circuit is coupled to the transfer gates of each of the binned pixels and includes its own second transfer gate that separates the pixels from a gain mode select block. The gain mode select block may include capacitors of different sizes and one or more switches to control which capacitors are to receive the charge from any one of the binned pixels. The readout circuit may also include a potential barrier (such as a diode), which allows for pumping charge onto the one or more capacitors of the gain mode select block.

Abstract: A given pixel of a pixel array includes various operation modes with each of the operation modes having a different conversion gain for the charge received from the photodetector of the pixel. When the modes are used in conjunction with one another, the dynamic range of the pixel can be increased. A readout circuit coupled to a photodetector within a given pixel includes a transfer gate between the photodetector and a gain mode select block that includes capacitors of different sizes and one or more switches to control which capacitors are to receive the charge from the photodetector. Depending on the state(s) of the one or more switches, different operation modes with different conversion gains can be selected to increase the dynamic range of the pixel. The adaptability of the readout circuit can allow for a high dynamic range even in extreme temperature environments by lowering the dark current.

Abstract: A given pixel of a pixel array includes various operation modes with each of the operation modes having a different conversion gain for the charge received from the photodetector of the pixel. When the modes are used in conjunction with one another, the dynamic range of the pixel can be increased. A readout circuit coupled to a photodetector within a given pixel includes a transfer gate between the photodetector and a gain mode select block that includes capacitors of different sizes and one or more switches to control which capacitors are to receive the charge from the photodetector. Depending on the state(s) of the one or more switches, different operation modes with different conversion gains can be selected to increase the dynamic range of the pixel. The adaptability of the readout circuit can allow for a high dynamic range even in extreme temperature environments by lowering the dark current.

Abstract: Techniques are provided for x-ray sensing for intraoral tomography. A methodology implementing the techniques according to an embodiment includes detecting an x-ray pulse based on energy received at one or more pixels of a pixel array. The method also includes integrating the energy received at each of the pixels of the array of pixels, in response to the detection, wherein the energy received at each of the pixels is associated with the x-ray pulse. The method further includes multiplexing readouts of analog signals from the array of pixels into two or more parallel channels. The method further includes simultaneously converting (or otherwise in parallel) the analog signals of each of the channels into digital signals and storing the digital signals in memory as frames of data. The method may further include, for example, transmitting the frames of data from the memory, over a Universal Serial Bus, to an imaging system.

Abstract: Techniques are provided for x-ray onset detection for an intraoral dental sensor. A methodology implementing the techniques according to an embodiment includes calculating a plurality of superpixel values for each of a plurality of rows of detector pixels of a sensor. Each of the superpixel values is based on a sum of pixel values of a set of pixels associated with the superpixel value, the set of pixels selected from the detection row of a current frame of the sensor. The method also includes calculating a difference between each of the superpixel values and a corresponding stored superpixel value generated from a previous sensor frame and determining if the differences exceed a superpixel threshold value. The method further includes incrementing a hit counter in response to the determination and generating a detection signal if the hit counter exceeds a hit count threshold, otherwise proceeding to process the next detection row.

Abstract: A pixel, is provided the pixel comprising: a photodiode structure built on top of an integrated circuit generating a charge; the integrated circuit comprising at least one semiconductor material and at least one interconnect layer; the at least one interconnect layer comprises an interconnect to facilitate charge flowing into a collection node disposed in the semiconductor material; the interconnect being in contact with a doped contact diffusion disposed proximate to the collection node; a transfer transistor disposed between the collection node and a conversion node, the conversion node coupled to an active transistor; the pixel having a reset configured to reset the conversion node.

Abstract: Techniques are provided for x-ray sensing for intraoral tomography. A methodology implementing the techniques according to an embodiment includes detecting an x-ray pulse based on energy received at one or more pixels of a pixel array. The method also includes integrating the energy received at each of the pixels of the array of pixels, in response to the detection, wherein the energy received at each of the pixels is associated with the x-ray pulse. The method further includes multiplexing readouts of analog signals from the array of pixels into two or more parallel channels. The method further includes simultaneously converting (or otherwise in parallel) the analog signals of each of the channels into digital signals and storing the digital signals in memory as frames of data. The method may further include, for example, transmitting the frames of data from the memory, over a Universal Serial Bus, to an imaging system.

Abstract: Techniques are provided for x-ray image data monitoring and signaling for patient safety. A methodology implementing the techniques according to an embodiment includes integrating energy associated with a received x-ray pulse at an array of pixels. The method also includes multiplexing a readout of the integrated energy from the array of pixels, as analog signals, into channels, and performing analog to digital conversion of the analog signals of the channels into digital signals. The method further includes generating an error indicator in response to determining that a calculated mean of the digital signals is either greater than an upper threshold value associated with saturation or less than a lower threshold value associated with underexposure. The method further includes transmitting the error indicator over a Universal Serial Bus, to an imaging system, to terminate transmission of further x-ray pulses.

Abstract: An apparatus for forming a color image of a scene and a method for utilizing that apparatus are disclosed. The apparatus includes a plurality of pixel sensors. Each pixel sensor includes a first photodetector includes first main photodiode and a first floating diffusion node. The first main photodiode is characterized by a first light conversion efficiency as a function of wavelength of a light signal incident thereon. The first floating diffusion node includes a parasitic photodiode characterized by a second light conversion efficiency as a function of the wavelength. The second light conversion efficiency is different from the first light conversion efficiency as a function of wavelength. A controller generates an intensity of light in each of a plurality of wavelength bands for the pixel sensor utilizing a measurement of the light signal by each of the first main photodiode and the first parasitic photodiode in that photodetector.

Abstract: A low-noise amplifier is disclosed. The amplifier includes a signal amplifier having an amplifier signal output, a first filter capacitor, a buffer amplifier having a buffer amplifier input and a buffer amplifier output; and a switching network. The first filter capacitor has first and second terminals. The second terminal is connected to a power rail. The amplifier signal output is connected to the buffer amplifier input by a first direct current path and the buffer amplifier output to the first terminal of the first filter capacitor by a second direct current path during a first time period. The amplifier signal output is connected directly to the first terminal of the first filter capacitor by a third direct current path during a second time period, and the amplifier signal output to the first terminal of the first filter capacitor through a resistor during a third time period.

Abstract: A pixel sensor, an imaging array that includes such pixel sensors, and a method for operating an imaging array are disclosed. The pixel sensor includes a transfer gate that connects a photodiode to a floating diffusion node in response to a transfer signal, a reset circuit, and a controller. The reset circuit is adapted to apply either a first potential or a second potential to the floating diffusion node, the second potential being less than the first potential. The controller is configured to cause the reset circuit to apply the first potential to the floating diffusion node while the transfer gate is conducting just prior to a start of an accumulation phase, and then apply the second potential to the floating diffusion node after the transfer gate is rendered non-conducting, the second potential is less than the first potential.

Abstract: An imaging array and a pixel sensor are disclosed. One of the pixel sensors in the imaging array includes a photodiode having a cathode connected to an electron storage node and an anode connected to a hole storage node. An overflow path connects the electron storage node via an overflow gate that allows electrons to leak off of the electron storage node into the overflow path if the electron storage node has a potential less than a leakage potential. A floating diffusion node is connected to the electron storage node by a transfer gate and the overflow path by an overflow path gate. A hole storage node reset gate connects the hole storage node to ground. A hole storage capacitor is connected between the hole storage node and ground, and an overflow path coupling capacitor connects the hole storage node to the overflow path.

Abstract: An imaging array and a pixel sensor are disclosed. One of the pixel sensors in the imaging array includes a photodiode having a cathode connected to an electron storage node and an anode connected to a hole storage node. An overflow path connects the electron storage node via an overflow gate that allows electrons to leak off of the electron storage node into the overflow path if the electron storage node has a potential less than a leakage potential. A floating diffusion node is connected to the electron storage node by a transfer gate and the overflow path by an overflow path gate. A hole storage node reset gate connects the hole storage node to ground. A hole storage capacitor is connected between the hole storage node and ground, and an overflow path coupling capacitor connects the hole storage node to the overflow path.

Abstract: A pixel, is provided the pixel comprising: a photodiode structure built on top of an integrated circuit generating a charge; the integrated circuit comprising at least one semiconductor material and at least one interconnect layer; the at least one interconnect layer comprises an interconnect to facilitate charge flowing into a collection node disposed in the semiconductor material; the interconnect being in contact with a doped contact diffusion disposed proximate to the collection node; a transfer transistor disposed between the collection node and a conversion node, the conversion node coupled to an active transistor; the pixel having a reset configured to reset the conversion node.

Abstract: An apparatus for taking moving pictures, a method for taking moving pictures, and a novel pixel sensor array are disclosed. The apparatus includes a rectangular imaging array, a plurality of column processing circuits, and a controller. The rectangular imaging array is characterized by a plurality of rows and columns of UHDR pixel sensors and a plurality of readout lines, and a plurality of row select lines. Each column processing circuit is connected to a corresponding one of the plurality of readout lines. The controller causes the rectangular imaging array to measure a plurality of images of a scene that is illuminated by a pulsating light source characterized by an illumination period and a dark period. Each of the images is generated in a frame period which includes an exposure period and a dead period, the dead period being less than the dark period.

Abstract: An imaging array and method for using the same that are adapted for backside illuminated imaging arrays utilizing a global shutter are disclosed. The imaging array includes a plurality of pixel sensors having an ordered array of pixel sensors. Each pixel sensor includes a main photodiode and a correction photodiode. A controller resets all of the main photodiodes at a first time that is the same for all of the pixel sensors, resets all of the correction photodiodes at a second time that is the same for all of the pixel sensors after the first time, and sequentially reads out the pixel sensors. The pixel sensor is read out at a third time that is different for different ones of the pixel sensors. A correction charge is measured that corrects for the different readout times.

Abstract: A pixel sensor, an imaging array that includes such pixel sensors, and a method for operating an imaging array are disclosed. The pixel sensor includes a transfer gate that connects a photodiode to a floating diffusion node in response to a transfer signal, a reset circuit, and a controller. The reset circuit is adapted to apply either a first potential or a second potential to the floating diffusion node, the second potential being less than the first potential. The controller is configured to cause the reset circuit to apply the first potential to the floating diffusion node while the transfer gate is conducting just prior to a start of an accumulation phase, and then apply the second potential to the floating diffusion node after the transfer gate is rendered non-conducting, the second potential is less than the first potential.

Abstract: A frequency divider includes a circuit that receives an input clock signal having a period T on an input port thereof and generates an output clock signal on an output port thereof having a period MT in response to a control signal specifying M is disclosed. Here, M is a positive integer and all transitions between logical one and logical zero in the output clock signal occur at integer multiples of T. In one embodiment, the circuit includes a module string having characterized by N identical modules connected in series to form a string of modules. Each module is configured such that when the clock signal having period T is input to the first module, the output clock signal having a period of MT is output from the last module, where M can have any value between one and a maximum number that depends on N.

Abstract: A low-noise amplifier is disclosed. The amplifier includes a signal amplifier having an amplifier signal output, a first filter capacitor, a buffer amplifier having a buffer amplifier input and a buffer amplifier output; and a switching network. The first filter capacitor has first and second terminals. The second terminal is connected to a power rail. The amplifier signal output is connected to the buffer amplifier input by a first direct current path and the buffer amplifier output to the first terminal of the first filter capacitor by a second direct current path during a first time period. The amplifier signal output is connected directly to the first terminal of the first filter capacitor by a third direct current path during a second time period, and the amplifier signal output to the first terminal of the first filter capacitor through a resistor during a third time period.

Abstract: A pixel, is provided the pixel comprising: a photodiode structure built on top of an integrated circuit generating a charge; the integrated circuit comprising at least one semiconductor material and at least one interconnect layer; the at least one interconnect layer comprises an interconnect to facilitate charge flowing into a collection node disposed in the semiconductor material; the interconnect being in contact with a doped contact diffusion disposed proximate to the collection node; a transfer transistor disposed between the collection node and a conversion node, the conversion node coupled to an active transistor; the pixel having a reset configured to reset the conversion node.