Patents Assigned to BAE Systems Information
  • Patent number: 7911293
    Abstract: Techniques are disclosed that allow for programmable attenuation using thermometer code steps. By thermometer coding the attenuator structure, monotonicity is guaranteed or otherwise greatly improved, which eliminates instability problems with automatic gain control loops and without the need for compensation or trimming. In addition, the thermometer coding technique also greatly reduces phase discontinuity between adjacent gain states.
    Type: Grant
    Filed: June 26, 2009
    Date of Patent: March 22, 2011
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Douglas S. Jansen, Gregory M. Flewelling
  • Publication number: 20110059714
    Abstract: Techniques are disclosed for eliminating or otherwise sufficiently suppressing spurious signals. The techniques are particularly useful in applications such as those that employ aggressor frequency sources along with a frequency conversion or mixing function, and especially applications implemented as a system-on-chip. In the spur-training mode, a spur-canceller circuit identifies spurious tones associated with the host system to neutralize those tones when running in a normal mode. The tones are neutralized using a comb generator with variable phase and gain by way of cancellation with comb output signals having substantially the same amplitude and a phase that is 180° out of phase with the aggressor tone to be cancelled.
    Type: Application
    Filed: September 8, 2009
    Publication date: March 10, 2011
    Applicant: BAE SYSTEMS Information and Electronic Systems Integration Inc.
    Inventors: Thomas E. Collins, III, Douglas S. Jansen
  • Publication number: 20110059709
    Abstract: Techniques are disclosed for optimization of RF converters. The techniques can be employed, for instance, in RF converters implemented in semiconductor materials (system-on-chip, or chip set) or with discrete components on a printed circuit board. In any such cases, the RF converter system can be configured with one or more actuators to adjust performance, one or more sensor to assess the performance (e.g., linearity of RF converter) and parameters of interest (e.g., ambient temperature, and a control block for controlling the sensors and actuators. The configuration allows the RF converter to autonomously self-optimize for linearity or other parameters of interest such as gain, noise figure, and dynamic range, across a broad range of variables.
    Type: Application
    Filed: September 8, 2009
    Publication date: March 10, 2011
    Applicant: BAE SYSTEMS Information and Electronics Systems Integration Inc.
    Inventor: Thomas E. Collins, III
  • Patent number: 7902695
    Abstract: A bipolar pulse generator includes a pair of two-conductor transmission lines coupled together with a load positioned between the two transmission lines. Two segments of one transmission line are charged and switchably coupled to two segments of the other transmission line to produce a bipolar pulse on the matched load. The generator may include two transmission line structures coupled together with a load positioned between each transmission line structures. The first transmission line structure may include a stepped transmission line and an embedded transmission line segment. A switch is coupled between the embedded transmission line segment and another segment of the transmission line structure. During operation, the first transmission line structure is charged to a potential with the switch in the open position and, when the switch is closed, the charge on the first transmission line structure together with the second transmission line structure generates a bipolar pulse on the matched load.
    Type: Grant
    Filed: March 13, 2009
    Date of Patent: March 8, 2011
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventor: Simon London
  • Publication number: 20110054451
    Abstract: CdSiP2 crystals with sizes and optical quality suitable for use as nonlinear optical devices are disclosed, as well as NLO devices based thereupon. A method of growing the crystals by directional solidification from a stoichiometric melt is also disclosed. The disclosed NLO crystals have a higher nonlinear coefficient than prior art crystals that can be pumped by solid state lasers, and are particularly useful for frequency shifting 1.06 ?m, 1.55 ?m, and 2 ?m lasers to wavelengths between 2 ?m and 10 ?m. Due to the high thermal conductivity and low losses of the claimed CdSiP2 crystals, average output power can exceed 10 W without severe thermal lensing. A 6.45 ?m laser source for use as a medical laser scalpel is also disclosed, in which a CdSiP2 crystal is configured for non-critical phase matching, pumped by a 1064 nm Nd:YAG laser, and temperature-tuned to produce output at 6.45 ?m.
    Type: Application
    Filed: October 23, 2009
    Publication date: March 3, 2011
    Applicant: BAE Systems Information and Electronic Systems Integration, Inc.
    Inventors: Peter G Schunemann, Kevin T Zawilski
  • Publication number: 20110051674
    Abstract: A method is disclosed for increasing the communication capacity of a shared ad-hoc wireless channel by using multiuser detection (MUD) to distinguish overlapping information transmitted simultaneously by a plurality of nodes. The transmitting nodes simultaneously provide parameter-estimating signals over separate, unshared, low-rate parameter channels generated using orthogonal frequencies, spread spectrum technology, or time multiplexing. Receiving nodes use these separate, non-overlapping parameter-estimating signals to estimate MUD-required signal parameters such as amplitude, phase, and frequency offset, thereby enabling use of lower complexity MUD receivers, because the parameters are not estimated in the presence of other interference. Node ID, spreading code type, and/or other information can also be transmitted over the parameter channels. Limiting the number of parameter channels can limit the maximum number of transmitting nodes.
    Type: Application
    Filed: September 25, 2009
    Publication date: March 3, 2011
    Applicant: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Joshua D Niedzwiecki, Brandon P Hombs
  • Patent number: 7899644
    Abstract: A threat launch detection system includes at least one temporal threat detector, each temporal threat detector including a single sensing element operable to sense radiation from various types of short-burn threats that occur within a field of view of the detector. The single sensing element generates a detection signal in response to the sensed radiation. A processing circuit is coupled to each temporal threat detector and is operable to analyze the detection signal from each detector as a function of time to detect the occurrence of a short-burn threat within the field of view of any of the temporal threat detectors. Each temporal threat detector may be a prism-coupled compound parabolic concentrator (PCCP).
    Type: Grant
    Filed: February 7, 2005
    Date of Patent: March 1, 2011
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Jonathan L. Weber, John Mandzy, Paul I. Egbert, Kirby A. Smith, Jill A. Shea, John L. Downing, III
  • Patent number: 7894144
    Abstract: In the subject three-axis pointing system, the elevation and tip mirror axes are permanently mounted with their rotation axes orthogonal to each other to eliminate gimbal lock over the hemisphere, to avoid high accelerations as the zenith or nadir pointing directions are approached, and to provide optimal two-axis beam pointing control.
    Type: Grant
    Filed: June 8, 2007
    Date of Patent: February 22, 2011
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Steven J. Wein, James D. Targove, Arthur Menikoff, Dennis P. Bowler, David J. Korwan
  • Patent number: 7894307
    Abstract: An acoustic projector which includes an outer shell formed of a reinforced epoxy resin having a longitudinal slot has an inner reinforcing liner formed of metal to reduce mechanical stress. The liner extends throughout the length of the outer shell and has a longitudinal slot aligned with the slot formed in the shell. An arcuate shaped driver is mounted along a portion of the I.D. of the metal liner and separated therefrom by insulation. In an alternate embodiment, the outer shell is formed of a plurality of overlapping layers of epoxy/graphite strips extending at various angles to increase the Z-axis stiffness.
    Type: Grant
    Filed: September 17, 2009
    Date of Patent: February 22, 2011
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Jason W. Osborn, Matthew M. DeAngelis
  • Patent number: 7895559
    Abstract: A multi-function core base cell includes a set of functional microcircuits. These microcircuits are used to design a Library of Logic Function Macros. The functional macros consisting of one or more microcircuits have a fixed and complete physical layout similar to a conventional standard cell library macro set. In addition to a core functional macro set, primary input/output buffers and commonly used single and dual port memory blocks are also defined in the library. The library includes all the ASIC synthesis, simulation, and physical design rules.
    Type: Grant
    Filed: July 17, 2008
    Date of Patent: February 22, 2011
    Assignee: BAE System Information and Electric Systems Integration Inc.
    Inventor: Jai P. Bansal
  • Patent number: 7894128
    Abstract: A terahertz imaging system and method of use including a compact Yb-doped fiber laser-pumped ZGP crystal as a THz source and an uncooled microbolometer array as a detector. According to the present invention, semiconductor lasers are also drive current modulated to produce desired laser pulsewidth, repetition rate and wavelengths needed for DFG THz generation in various non-linear crystals. The fiber-coupled semiconductor lasers provide at least two wavelengths that will produce THz radiation by DFG in non-linear converter. These two wavelengths are combined and amplified in a single Yb fiber amplifier chain. Yb amplifier is staged in continually increasing core diameters to provide significant signal amplification while suppressing deleterious non-linear effects.
    Type: Grant
    Filed: February 1, 2008
    Date of Patent: February 22, 2011
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: John C. McCarthy, Daniel Creeden, Peter A. Ketteridge
  • Patent number: 7891297
    Abstract: A method for detonating a munition comprising the steps of providing a plurality of micro-detonators and microprocessors in said munition and initiating said micro-detonators in a predetermined sequence by means of said microprocessor. Depending on the specific predetermined sequence which is selected, one of a variety of explosive modes may be achieved.
    Type: Grant
    Filed: October 16, 2006
    Date of Patent: February 22, 2011
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventor: Paul R. Rohr
  • Publication number: 20110039388
    Abstract: Techniques are disclosed that facilitate fabrication of semiconductors including structures and devices of varying thickness. One embodiment provides a method for semiconductor device fabrication that includes thinning a region of a semiconductor wafer upon which the device is to be formed thereby defining a thin region and a thick region of the wafer. The method continues with forming on the thick region one or more photonic devices and/or partially depleted electronic devices, and forming on the thin region one or more fully depleted electronic devices. Another embodiment provides a semiconductor device that includes a semiconductor wafer defining a thin region and a thick region. The device further includes one or more photonic devices and/or partially depleted electronic devices formed on the thick region, and one or more fully depleted electronic devices formed on the thin region. An isolation area can be formed between the thin region and the thick region.
    Type: Application
    Filed: October 27, 2010
    Publication date: February 17, 2011
    Applicant: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Craig M. HILL, Andrew TS POMERENE, Daniel N. CAROTHERS, Timothy J. CONWAY, Vu A. VU
  • Publication number: 20110032022
    Abstract: Techniques are disclosed for reducing off-state leakage current in a differential switching device. The techniques can be embodied, for example, in a method that includes receiving a differential input signal at a differential input of each of a primary switch and a dummy switch. In an enabled-state of the device, the method further includes passing the differential input signal to a differential output of the primary switch. In a disabled-state of the device, the method further includes canceling off-state leakage current at the differential output of the primary switch, by virtue of the dummy switch having its differential output reverse-coupled to the differential output of the primary switch. The method may further include preventing the dummy switch from passing signals other than off-state leakage signals. The techniques can be embodied, for instance, in a switching device.
    Type: Application
    Filed: August 4, 2009
    Publication date: February 10, 2011
    Applicant: BAE SYSTEMS Information and Electronic System Integration Inc.
    Inventors: Gregory M. Flewelling, Douglas S. Jansen
  • Patent number: 7885291
    Abstract: An ad hoc emergency interoperability communication network is established by providing universal temporary incident area network modules that communicate with each other on an open network, with the network being established when vehicles containing the temporary incident area network modules are within range of each other.
    Type: Grant
    Filed: January 5, 2009
    Date of Patent: February 8, 2011
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventor: William J. Delaney
  • Publication number: 20110026315
    Abstract: A circuit and method are provided in which a six-transistor (6-T) SRAM memory cell is hardened to single-event upsets by adding isolation-field effect transistors (“iso-fets”) connected between the reference voltage Vdd and the field-effect transistors (“fets”) respectively corresponding to first and second inverters of the memory cell. According to certain embodiments, the control gates of first and second P-iso-fets are respectively tied to the control gates of first and second pull-up P-fets. According to certain embodiments, first and second N-iso-fets are connected between the output nodes of the memory cell and the pull-down N-fets respectively corresponding to the first and second inverters. The control gates of the first and second N-iso-fets are respectively tied to the control gates of the first and second pull-down N-fets. Again according to certain embodiments, one or more of the iso-fets are physically removed from the proximity of other transistors which comprise the memory cell.
    Type: Application
    Filed: October 7, 2010
    Publication date: February 3, 2011
    Applicant: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Reed K. Lawrence, Nadim F. Haddad
  • Publication number: 20110025135
    Abstract: A monolithically integrated light-activated thyristor, in an n-p-n-p-n-p sequence consists of a four-layered thyristor structure and an embedded back-biased PN junction structure as a turn-off switching diode. The turn-off switching diode is formed through structured doping processes and/or depositions on a single semiconductor wafer so that it is integrated monolithically without any external device or semiconductor materials. The thyristor can be switching on and off optically by two discrete light beams illuminated on separated openings of electrodes on the top surface of a semiconductor body. The carrier injection of the turning on process is achieved by illuminating the bulk of the thyristor with a high level light through the first aperture over the cathode to create high density charge carriers serving as the gate current injection and to electrically short the emitter and drift layer.
    Type: Application
    Filed: September 24, 2010
    Publication date: February 3, 2011
    Applicant: BAE Systems Information and Electronic Systems Integration Inc.
    Inventor: Yeuan-Ming SHEU
  • Publication number: 20110023132
    Abstract: A system and method for generating target area information. The system comprises a first processor effective to receive first information of a first classification level and a second processor effective to receive second information of a second classification level distinct from the first classification level. A cross domain processor is in communication with the first and second processors. The second processor is effective to receive a request from a requesting entity about a region of interest and interrogate a first sensor regarding the request. The second processor is further effective to receive first information from the first sensor and send the request through the cross domain processor to the first processor. The first processor is effective to interrogate a second sensor regarding the request and receive second information from the second sensor.
    Type: Application
    Filed: September 23, 2009
    Publication date: January 27, 2011
    Applicant: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Robert JELAVIC, Eric HANSEN, Jack L. GOLD, Surrendra SEOBARRAT
  • Patent number: 7876602
    Abstract: A circuit and method are provided in which a six-transistor (6-T) SRAM memory cell is hardened to single-event upsets by adding isolation-field effect transistors (“iso-fets”) connected between the reference voltage Vdd and the field-effect transistors (“fets”) respectively corresponding to first and second inverters of the memory cell. According to certain embodiments, the control gates of first and second P-iso-fets are respectively tied to the control gates of first and second pull-up P-fets. According to certain embodiments, first and second N-iso-fets are connected between the output nodes of the memory cell and the pull-down N-fets respectively corresponding to the first and second inverters. The control gates of the first and second N-iso-fets are respectively tied to the control gates of the first and second pull-down N-fets. Again according to certain embodiments, one or more of the iso-fets are physically removed from the proximity of other transistors which comprise the memory cell.
    Type: Grant
    Filed: June 18, 2008
    Date of Patent: January 25, 2011
    Assignee: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: Reed K. Lawrence, Nadim F. Haddad
  • Publication number: 20110001679
    Abstract: A MMIC amplifier is directly connected to the balanced feed points at the aperture of an antenna to eliminate the distance between electronics coupled to the antenna and the antenna itself, such that interfaces, components and connection lines which introduce losses and parasitic effects that degrade system performance are eliminated due the direct connection. Expanding the aperture of the antenna to accommodate the direct connection of a MMIC amplifier to balanced feed points of an antenna has been found to have no deleterious effects on antenna performance. Moreover, when coupling the MMIC amplifier to an unbalanced coaxial line, any associated ripple is minimized due to the direct connection.
    Type: Application
    Filed: July 1, 2009
    Publication date: January 6, 2011
    Applicant: BAE Systems Information and Electronic Systems Integration Inc.
    Inventors: David E. MEHARRY, David P. Charette