Patents Assigned to Bandwidth 9
  • Patent number: 6535541
    Abstract: A vertical cavity apparatus includes first and second mirrors, a substrate, first and second active regions and a plurality of individual active regions. Each of an individual active region is positioned between the first and second active regions. A first oxide layer is positioned between the first mirror and the second mirror. A plurality of tunnel junctions are positioned between the first and second mirrors.
    Type: Grant
    Filed: June 23, 2000
    Date of Patent: March 18, 2003
    Assignee: Bandwidth 9, Inc
    Inventors: Julien Boucart, Constance Chang-Hasnain, Michael Jansen, Rashit Nabiev, Wupen Yuen
  • Patent number: 6532096
    Abstract: A Finite Impulse Response (FIR) filter for suppressing ringing in tunable, or adjustable, members of MEMS devices is described. In embodiments of the invention, the FIR filter includes staggered proportional plus delay filters, or posicast filters. The FIR filter of the present invention is applicable to an adjustable mechanical member in a MEMS device which can be modeled as single mode second order system characterized by a resonance frequency &ohgr;0 and damping constant &zgr;<<1, i.e., a highly underdamped, single mode, second order system.
    Type: Grant
    Filed: May 7, 2001
    Date of Patent: March 11, 2003
    Assignee: Bandwidth 9, Inc.
    Inventors: Bereket Berhane, Dan Guthrie, David Walker
  • Patent number: 6493372
    Abstract: A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. A first etched layer is positioned between the first and second mirrors. A first tunnel junction is positioned between the first and second mirrors.
    Type: Grant
    Filed: June 23, 2000
    Date of Patent: December 10, 2002
    Assignee: Bandwidth 9, Inc.
    Inventors: Julien Boucart, Constance Chang-Hasnain, Michael Jansen, Rashit Nabiev, Wupen Yuen
  • Patent number: 6493373
    Abstract: A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. At least one of the first and second mirrors is a fused mirror. At least a first tunnel junction is positioned between the first and second mirrors.
    Type: Grant
    Filed: June 23, 2000
    Date of Patent: December 10, 2002
    Assignee: Bandwidth 9, Inc.
    Inventors: Julien Boucart, Constance Chang-Hasnain, Michael Jansen, Rashit Nabiev, Wupen Yuen
  • Patent number: 6490311
    Abstract: A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. At least one of the first and second mirrors is a lattice relaxed mirror. At least a first tunnel junction is positioned between the first and second mirrors.
    Type: Grant
    Filed: June 23, 2000
    Date of Patent: December 3, 2002
    Assignee: Bandwidth 9, Inc.
    Inventors: Julien Boucart, Constance Chang-Hasnain, Michael Jansen, Rashit Nabiev, Wupen Yuen
  • Patent number: 6487231
    Abstract: A vertical cavity apparatus includes first and second mirrors, a substrate and at least first and second active regions positioned between the first and second mirrors. At least one of the first and second mirrors is a dielectric mirror. At least a first tunnel junction is positioned between the first and second mirrors.
    Type: Grant
    Filed: June 23, 2000
    Date of Patent: November 26, 2002
    Assignee: Bandwidth 9, Inc.
    Inventors: Julien Boucart, Constance Chang-Hasnain, Michael Jansen, Rashit Nabiev, Wupen Yuen
  • Patent number: 6487230
    Abstract: A vertical cavity apparatus includes a first mirror, a substrate and a second mirror coupled to the substrate. At least a first and a second active region are each positioned between the first and second mirrors. At least a first ion implantation layer is positioned between the first and second mirrors. At least a first tunnel junction is positioned between the first and second mirrors.
    Type: Grant
    Filed: June 23, 2000
    Date of Patent: November 26, 2002
    Assignee: Bandwidth 9, INC
    Inventors: Julien Boucart, Constance Chang-Hasnain, Michael Jansen, Rashit Nabiev, Wupen Yuen
  • Patent number: 6327287
    Abstract: A tunable semiconductor laser assembly includes a laser with a seal surface, a semiconductor active region positioned between upper and lower confining regions of opposite type semiconductor material and first and second reflective members positioned at opposing edges of the active and confining regions. A seal cap includes a seal ring. The seal cap seal ring is coupled to the seal surface and forms a hermetic seal. A wavelength tuning member and a temperature sensor is coupled to the laser. A temperature sensor coupled to the laser. A control loop is coupled to the temperature sensor and the tuning member. In response to a detected change in temperature the control loop sends an adjustment signal to the tuning member, and the tuning member adjusts a voltage or current supplied to the laser to provide a controlled frequency and power of an output beam.
    Type: Grant
    Filed: October 6, 2000
    Date of Patent: December 4, 2001
    Assignee: Bandwidth 9 Inc
    Inventors: Peter Kner, Gabriel Ll, Philip Worland, Rang-Chen Yu, Wupen Yuen
  • Patent number: 6275513
    Abstract: A wafer assembly that includes a wafer substrate. A plurality of micro-optomechanical or micro-optoelectrical devices are positioned on a surface of the wafer substrate. Each micro-optomechanical or micro-optoelectrical device has a seal surface. A plurality of seal caps are coupled to the micro-optomechanical or micro-optoelectrical devices. Each seal cap has a seal ring. The seal cap seal ring is coupled to a seal surface of the micro-optomechanical or micro-optoelectrical device to form a hermetic seal.
    Type: Grant
    Filed: June 4, 1999
    Date of Patent: August 14, 2001
    Assignee: Bandwidth 9
    Inventors: Constance Chang-Hasnain, Renato Dato, Philip Worland, Rang-Chen Yu
  • Patent number: 6181717
    Abstract: A tunable semiconductor laser system includes a laser with a semiconductor active region positioned between upper and lower confining regions of opposite type semiconductor material. First and second reflective members are positioned at opposing edges of the active and confining regions. A wavelength tuning member and a temperature sensor are coupled to the laser. A control loop is coupled to the temperature sensor and the tuning member. In response to a detected change in temperature the control loop sends an adjustment signal to the tuning member and the tuning member adjusts a voltage or current supplied to the laser to provide a controlled output beam of selected wavelength.
    Type: Grant
    Filed: June 4, 1999
    Date of Patent: January 30, 2001
    Assignee: Bandwidth 9
    Inventors: Peter Kner, Gabriel Li, Philip Worland, Rang-Chen Yu, Wupen Yuen