Abstract: A semiconductor device comprising a pair of p-type regions facing each other, a pair of n-type regions facing each other, and a nearly intrinsic region connecting these regions, thereby establishing a hole current path connecting the p-type regions and an electron current path connecting the n-type regions. Each of the hole current path and the electron current path has a transfer function which is a function of structural parameters of the device and the applied biases. The electron current path and the hole current path can provide a complementary pair of outputs.