Abstract: Provided is a multi-channel capacitive sensing circuit, in which at least one capacitive sensor has the capacitance changed corresponding to the change of external environment, and generates change signals corresponding to the capacitance change, respectively. An oscillator outputs a carrier wave modulating the capacitance change signal. At least one capacitance-to-voltage converter receives the capacitance change signals modulated by means of the carrier wave and outputs voltage signals corresponding to the modulated capacitance change signals, respectively. A multiplexer receives the voltage signals, selects any one of the voltage signals and sequentially outputs them. An analog-to-digital converter (ADC) receives the voltage signals outputted from the multiplexer, converts them into digital voltage signals and outputs them. Accordingly, it is possible to output the capacitance change signals each generated in the at least one capacitance sensor to one ADC using the multiplexer.

Abstract: A bump structure with multiple layers may include a first layer electrically connected to a protective substrate hermetically packaging a base substrate, the first layer allowing the base substrate and the protective substrate to be spaced apart from each other at a predetermined distance; and a second layer electrically connected to the first layer, the second layer being eutectically bonded on a surface of the base substrate. The first layer may have a melting point higher than a eutectic temperature of the second layer and the base substrate. When using a bump structure with multiple layers, it is possible to secure a space in which a micro-structure such as a microelectromechanical systems (MEMS) device on a base substrate may be driven. Further, it is possible to prevent a contact between adjacent structures or electrodes from being generated due to diffusion of a bonding material in a hermetical packaging process.

Abstract: Provided is a multi-channel capacitive sensing circuit, in which at least one capacitive sensor has the capacitance changed corresponding to the change of external environment, and generates change signals corresponding to the capacitance change, respectively. An oscillator outputs a carrier wave modulating the capacitance change signal. At least one capacitance-to-voltage converter receives the capacitance change signals modulated by means of the carrier wave and outputs voltage signals corresponding to the modulated capacitance change signals, respectively. A multiplexer receives the voltage signals, selects any one of the voltage signals and sequentially outputs them. An analog-to-digital converter (ADC) receives the voltage signals outputted from the multiplexer, converts them into digital voltage signals and outputs them. Accordingly, it is possible to output the capacitance change signals each generated in the at least one capacitance sensor to one ADC using the multiplexer.

Abstract: A package stacked semiconductor device includes a plurality of pin linking means for electrically connecting at least one of control signal pins of one package to its neighbor NC pin of the same package. Either of the control signal pin or the neighbor NC pin, which are electrically interconnected, is electrically connected to the corresponding pin of the next package.