Publication number: 20090084422
Abstract: A p- or n-conductive semiconductor material comprises a compound of the general formula (I) Pb1-(x1+x2+ . . . +xn)A1x1A2x2 . . . AnxnTe1+z??(I) where: in each case independently n is the number of chemical elements different from Pb and Te 1 ppm?x1 . . . xn?0.05 ?0.05?z?0.05 and n?2 A1 . . . An are different from one another and are selected from the group of the elements Li, Na, K, Rb, Cs, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, As, Sb, Bi, S, Se, Br, I, Sc, Y, La, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu or n=1 A1 is selected from Ti, Zr, Ag, Hf, Cu, Gr, Nb, Ta.
Type:
Application
Filed:
January 29, 2007
Publication date:
April 2, 2009
Applicant:
BASF SE
Inventor:
Frank Haass