Patents Assigned to BAY ZU PRECISION CO., LTD.
  • Patent number: 11444215
    Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
    Type: Grant
    Filed: January 13, 2020
    Date of Patent: September 13, 2022
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, BAY ZU PRECISION CO., LTD.
    Inventors: Shun-Ming Chen, Chien-Chih Huang, Joel P. Desouza, Augustin J. Hong, Jeehwan Kim, Chien-Yeh Ku, Devendra K. Sadana, Chuan-Wen Wang
  • Patent number: 10593815
    Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
    Type: Grant
    Filed: February 12, 2018
    Date of Patent: March 17, 2020
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, BAY ZU PRECISION CO., LTD
    Inventors: Shun-Ming Chen, Chien-Chih Huang, Joel P. Desouza, Augustin J. Hong, Jeehwan Kim, Chien-Yeh Ku, Devendra K. Sadana, Chuan-Wen Wang
  • Patent number: 9917215
    Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
    Type: Grant
    Filed: June 22, 2016
    Date of Patent: March 13, 2018
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, BAY ZU PRECISION CO., LTD.
    Inventors: Shun-Ming Chen, Chien-Chih Huang, Joel P. Desouza, Augustin J. Hong, Jeehwan Kim, Chien-Yeh Ku, Devendra K. Sadana, Chuan-Wen Wang
  • Patent number: 9537038
    Abstract: A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.
    Type: Grant
    Filed: November 13, 2015
    Date of Patent: January 3, 2017
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, BAY ZU PRECISION CO., LTD
    Inventors: Tze-Chiang Chen, Augustin J. Hong, Chien-Chih Huang, Yu-Wei Huang, Jeehwan Kim, Devendra K. Sadana, Chih-Fu Tseng
  • Patent number: 9379259
    Abstract: A device and method for fabricating a photovoltaic device includes forming a double layer transparent conductive oxide on a transparent substrate. The double layer transparent conductive oxide includes forming a doped electrode layer on the substrate, and forming a buffer layer on the doped electrode layer. The buffer layer includes an undoped or p-type doped intrinsic form of a same material as the doped electrode layer. A light-absorbing semiconductor structure includes a p-type semiconductor layer on the buffer layer, an intrinsic layer and an n-type semiconductor layer.
    Type: Grant
    Filed: November 5, 2012
    Date of Patent: June 28, 2016
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, BAY ZU PRECISION CO., LTD.
    Inventors: Shun-Ming Chen, Chien-Chih Huang, Joel P. Desouza, Augustin J. Hong, Jeehwan Kim, Chien-Yeh Ku, Devendra K. Sadana, Chuan-Wen Wang
  • Patent number: 9190549
    Abstract: A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.
    Type: Grant
    Filed: February 28, 2012
    Date of Patent: November 17, 2015
    Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, BAY ZU PRECISION CO., LTD
    Inventors: Tze-Chiang Chen, Augustin J. Hong, Chien-Chih Huang, Yu-Wei Huang, Jeehwan Kim, Devendra K. Sadana, Chih-Fu Tseng
  • Publication number: 20130221373
    Abstract: A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.
    Type: Application
    Filed: February 28, 2012
    Publication date: August 29, 2013
    Applicants: BAY ZU PRECISION CO. LTD., INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Tze-Chiang Chen, Augustin J. Hong, Chien-Chih Huang, Yu-Wei Huang, Jeehwan Kim, Devendra K. Sadana, Chih-Fu Tseng
  • Publication number: 20130167920
    Abstract: A fabricating method of a conductive substrate including the following steps is provided. A substrate is provided. A barrier layer having a first roughened surface is formed on the substrate by an atmospheric pressure plasma process, wherein the surface roughness (Ra) of the first roughened surface formed by the atmospheric pressure plasma process is between 10 nanometers (nm) and 100 nm. A first electrode layer is formed on the first roughened surface of the barrier layer by a vacuum sputter process, wherein a second roughened surface with the surface roughness (Ra) between 10 nm and 100 nm is formed on a surface of the first electrode layer. Furthermore, a photoelectric conversion layer is formed on the second roughened surface of the first electrode layer. A second electrode layer is formed on the photoelectric conversion layer. A solar cell and a conductive substrate are also provided.
    Type: Application
    Filed: August 6, 2012
    Publication date: July 4, 2013
    Applicants: BAY ZU PRECISION CO., LTD., INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Chia-Chiang Chang, Chin-Jyi Wu, Chun-Hsien Su, Dao-Yang Huang