Abstract: A photonic integrated device (PID) for generating single and multiple wavelength optical signals is provided. The PID includes first and second reflective structures having first and second predetermined reflectivities, respectively. A common waveguide is optically coupled to the first reflective structure, and at least one semiconductor waveguide is optically coupled to the second reflective structure. The PID further includes at least one active gain region that is disposed between the first and second reflective structures. In various embodiments, the PID includes at least one of a dielectric waveguide based wavelength dependent element and a dielectric Bragg stack.

Abstract: A photonic integrated circuit (PIC) is grown by epitaxy on a substrate. The PIC includes at least one active element, at least one passive element, and a dielectric waveguide. The at least one active and passive elements are formed over the substrate and are in optical contact with each other. The dielectric waveguide is formed over the substrate, and is in optical contact with the at least one active and passive elements. The at least one active and passive elements each are formed using a III-V compound semiconductor material.

Abstract: A photonic integrated circuit (PIC) is grown by epitaxy on a substrate. The PIC includes at least one active element, at least one passive element, and a dielectric waveguide. The at least one active and passive elements are formed over the substrate and are in optical contact with each other. The dielectric waveguide is formed over the substrate, and is in optical contact with the at least one active and passive elements. The at least one active and passive elements each are formed using a III-V compound semiconductor material.