Abstract: A wearable device, a control method for the same and a control system are provided. The wearable device is coupled to a terminal device for generating a virtual scene and includes: a device body, a controller and a resistance adjusting mechanism. The controller is coupled to the resistance adjusting mechanism and configured to generate a control signal based on environmental information in the virtual scene generated by the terminal device. The resistance adjusting mechanism is configured to adjust a resistance parameter of the device body in a working state according to the control signal.

Abstract: The embodiments of the present invention provide a thin film transistor including a gate, an upper active layer, a lower active layer, an upper source, a lower source, an upper drain and a lower drain. The upper active layer and the lower active layer are disposed at an upper side and a lower side of the gate, respectively, the lower source and the lower drain are connected to the lower active layer, respectively, and the upper source and the upper drain are connected to the upper active layer, respectively. The embodiments of the present invention also provide an array substrate including the thin film transistor, a method of fabricating the array substrate, and a display device including the array substrate.

Abstract: According to the present disclosure, there are disclosed a pixel structure, a dual-gate pixel structure and a display device. The pixel structure comprises: a thin film transistor, a passivation layer that is located over the thin film transistor, an upper pixel electrode that is located over the passivation layer, a lower pixel electrode that is located under a gate insulating layer of the thin film transistor; and a common voltage line that is located between the passivation layer and the gate insulating layer. The common voltage line overlaps with the lower pixel electrode and the upper pixel electrode at least in part with the gate insulating layer and the passivation layer interposed therebetween, respectively, so as to form a storage capacitance.

Abstract: A mask comprises a channel region half-exposure mask structure, a drain mask structure, and a source mask structure, wherein the channel region half-exposure mask structure comprises a channel region peripheral half-exposure mask structure, which extends from a portion that corresponds to a channel region of the TFT and is outside the portion. According to the present invention, problems such as a connection of the source/drain and a disconnection of the active layer in the channel region can be effectively prevented.