Abstract: Preheat processes for a millisecond anneal system are provided. In one example implementation, a heat treatment process can include receiving a substrate on a wafer support in a processing chamber of a millisecond anneal system; heating the substrate to an intermediate temperature; and heating the substrate using a millisecond heating flash. Prior to heating the substrate to the intermediate temperature, the process can include heating the substrate to a pre-bake temperature for a soak period.
Type:
Grant
Filed:
June 5, 2020
Date of Patent:
August 24, 2021
Assignees:
Beijing E-Town Semiconductor Technologv Co., Ltd., Mattson Technology, Inc.