Abstract: A field effect transistor (FET), a method of fabricating a field effect transistor, and an electronic device, the field effect transistor comprises: a source and a drain, the source being made of a first graphene film; a channel disposed between the source and the drain, and comprising a laminate of a second graphene film and a material layer having semiconductor properties, the second graphene film being formed of bilayer graphene; and a gate disposed on the laminate and electrically insulated from the laminate.

Abstract: A field effect transistor (FET), a method of fabricating the field effect transistor, and an electronic device are provided. The field effect transistor comprises: a source and a drain, the source being made of a Dirac material (103); a channel disposed between the source and the drain, and doped opposite to the source; and a gate (106) disposed on the channel and electrically insulated from the channel.

Abstract: A field effect transistor, a method of manufacturing the field effect transistor, and an electronic device are provided, wherein the field effect transistor comprises: a source(105) formed of a Dirac material(103) and a drain(107); a channel(102) disposed between the source(105) and the drain(107); and a source control electrode(108) disposed on the source(105) and for controlling the doping of the Dirac material(103) such that the Dirac material(103) and the channel(102) are doped in an opposite manner; and a gate(106) disposed on the channel(102) and electrically insulated from the channel(102).

Abstract: A field effect transistor (FET), a method of fabricating the field effect transistor, and an electronic device are provided. The field effect transistor comprises: a source and a drain, the source being made of a Dirac material (103); a channel disposed between the source and the drain, and doped opposite to the source; and a gate (106) disposed on the channel and electrically insulated from the channel.

Abstract: A field effect transistor (FET), a method of fabricating a field effect transistor, and an electronic device, the field effect transistor comprises: a source and a drain, the source being made of a first graphene film; a channel disposed between the source and the drain, and comprising a laminate of a second graphene film and a material layer having semiconductor properties, the second graphene film being formed of bilayer graphene; and a gate disposed on the laminate and electrically insulated from the laminate.

Abstract: A field effect transistor, a method of manufacturing the field effect transistor, and an electronic device are provided, wherein the field effect transistor comprises: a source (105) formed of a Dirac material (103) and a drain (107); a channel (102) disposed between the source (105) and the drain (107); and a source control electrode (108) disposed on the source (105) and for controlling the doping of the Dirac material (103) such that the Dirac material (103) and the channel (102) are doped in an opposite manner, and a gate (106) disposed on the channel (102) and electrically insulated from the channel (102).