Abstract: A low-power-loss power semiconductor switching device and its fabricating method are proposed to provide a low-power-loss IGBT, MCT, or GTO with a voltage rating of less than 2 kV, wherein said device includes a combination of an ultra-thin lightly-doped back-side p+ emitter formed by ion implanting and a nonuniformly-doped n-type base layer which contains a residual layer of a priorly-diffused n+ layer on one side. And in accordance with said method, the residual diffused-layer near the p+ emitter contained in the nonuniformly doped base is formed in the first step of the fabricating process before the thinning of the substrate. After the thinning of the substrate, only low-temperature processes occur. This invention combines the feature of low on-voltage of a PT-IGBT and the feature of short switching time of an NPT-IGBT, and is very applicable to practical manufacturing.

Abstract: The present invention relates to novel cis-platinumdiamine complexes represented by the general formula (I) and the process of preparation thereof. The definitions of the substituents in the above-mentioned formula are the same as defined in the specification. The present invention also provides antitumorous compositions containing one or more of the above-said complexes as active ingredients.

Abstract: This invention relates to a method for preparing rare earth metal catalysts with a honeycomb-like alloy support and catalysts obtained thereby, which method comprises: preparing a corrugated, perforated metal alloy support tape, coating the support tape with a solution of a mixture of light rare earth metal salts; drying the support tapes; decomposing and oxidizing the rare earth metal salts into catalytic materials having a perovskite or a spinel type crystal structure.