Abstract: A method and apparatus for creating customized call processing information (CCPI) records to permit customized telephone services for individual subscribers to a telephone network. The records are provided in a binary representation, an internal data structure representation and a displayed representation. The displayed representation for a CCPI record may be provided in a plurality of formats. For example, a "graph" format or a "form" format. The binary and internal data structure representations of a CCPI record are less machine dependent than the displayed representation and can, therefore, be implemented in a variety of processing devices. The displayed representation can be developed by an operator to correspond to any desired operating environment which, when interfaced with the internal data structure representation, permits the creation of CCPI records on a wide variety of processing devices.

Abstract: A receiver for use in the port or portable units in a TDM/TDMA digital radio communications system is disclosed which incorporates an equalizer (107) to compensate for channel distortion due to multipath delay spread. Each received burst of information is oversampled at a multiple of the symbol rate and stored in a buffer memory (105). A joint estimator (106) processes the stored burst by operating on a known training sequence of bits within the burst to determine burst timing (where the burst actually begins) and the symbol timing (the optimum sample sample per oversampled symbol to be used for detection purposes). The estimator also determines whether the stored burst should be processed in a time-forward or time-reversed order.

Abstract: A method of fusing together wafers (10, 30) or other semiconductor bodies comprising different semiconductors. In the case that wafers of InP and GaAs or other compound semiconductors are to be bonded, the wafers are cleaned with etchant, and their surfaces are placed together. While the wafers are forced together under moderate pressure and clean hydrogen flows over the wafers, the temperature is raised to 650.degree. C., close to the deposition temperature for epitaxial InP, and maintained for 30 minutes. In the case that one of the wafers is silicon (FIG. 5), both wafers are assembled together in hydrofluoric acid, in which the two wafers bond together by van der Waals force. Then, the assembly is placed in a furnace and annealed at 650.degree. C. A sharp hetero-interface (32, 66, 70) is produced with only surface defects which do not propagate into the bulk. Either wafer may be preformed with a multi-layer opto-electronic structure (12).

Abstract: In accordance with our adaptive transform coding algorithm for a still image, the image is divided into small blocks of pixels and each block of pixels is transformed using an orthogonal transform such as a discrete cosine transform. The resulting transform coefficients are compressed and coded to form a bit stream for transmission to a remote receiver. The compression parameters for each block of pixels are chosen based on a busyness measure for the block such as the magnitude of the (K+1).sup.th most significant transform coefficient. This enables busy blocks for which the human visual system is not sensitive to degradation to be transmitted at low bit rates while enabling other blocks for which the human visual system is sensitive to degradation to be transmitted at higher bit rates. Thus, the algorithm is able to achieve a tradeoff between image quality and bit rate.

Abstract: A holographic learning machine comprising a volume holographic recording medium, 2N photo-detectors receiving light diffracted from the medium, and N electrical circuits subtracting respective pairs of outputs of the photo-detectors, thresholding the differences and comparing them to target values. During training, a coherent image beam shines on the recording medium and corresponding target values are supplied to the circuits. Depending on whether the comparison between the thresholded difference and the target is positive or negative, a positive error or negative error amplitude modulator in a 2N array is turned on to transmit to the recording medium light coherent with the image beam. Thereby, the full bipolar perceptron algorithm is implemented. The implementation may be integrated into a rugged, integral unit.

Abstract: Apparatus to establish eye contact between communicating parties during video conferencing comprises mirrors, polarizers and a camera which are positioned with respect to one another in a special, well-defined manner such that the apparatus protrudes a minimal distance from the terminal screen. Internal to this apparatus, a first polarizer located directly in front of the terminal screen passes a polarization of the image of the distant party radiated from the terminal screen. A first mirror, which is partially silvered, reflects the image of the local party and transmits the image of the distant party that is radiated from the terminal screen and passed by the first polarizer. The reflected image of the local party is directed toward a second mirror located below the first mirror. The second mirror is positioned to capture the image of the local party from the first mirror and to reflect this image into a miniature camera.

Abstract: In accordance with an inventive FEC code, data is transmitted in codewords comprising n m-bit symbols. Of the n symbols, k symbols are known information symbols and h symbols are parity symbols for erasure correction. All of the symbols of the codeword are elements of a field of 2.sup.m integers which is closed with respect to addition and multiplication such as a Galois field. To determine the h parity symbols, an encoder circuit derives a matrix corresponding to a set of simultaneous equations in terms of the k known information symbols and the h parity symbols. This set of equations is then solved for the h parity symbols so that a codeword is transmitted comprising k known information symbols and h known parity symbols. At a decoder, the values of up to h erased symbols in the codeword may be reconstructed using a similar set of simultaneous equations.

Abstract: A Thin film electrode for a rechargeable (secondary) battery is prepared by electron beam deposition of LiMn.sub.2 O.sub.4, LiCoO.sub.2, or LiNiO.sub.2 on a smooth, amorphous substrate surface and in situ annealing of the deposited lithium composition at a temperature below about 500.degree. C. The amorphous nature of the substrate surface prevents epitaxial growth or ordered orientation of the minute composition crystallites thus formed. The finely granular structure of the resulting electrode thin film presents abundant surface area that enables a 4V battery to provide current densities in the range of 500 microamps/cm.sup.2. The low annealing temperature enables formation of the electrode structure and subsequent battery assembly directly upon semiconductor devices and integrated circuitry.

Abstract: A method of fabricating a lateral bipolar heterojunction transistor and the transistor itself. In a first embodiment a first semiconductor layer of, for instance, InGaAsP is epitaxially grown on an insulating substrate with the subsequent selective area epitaxial regrowth of a second semiconductor layer, of for instance, InP on the substrate and adjacent to the base. The selective area regrowth forms the collector and emitter. Alternatively, the emitter and collector can be grown first and the base is regrown. In both cases, the semiconductor regrowth is epitaxial to the underlying substrate and to the semiconductor material at the side. Thereby, interface damage at the interface between the base and the emitter or collector is reduced so as to allow lateral minority carrier transport across the junction and small area junctions at low capacitance.